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Santavicca,D.F.; Reulet,B.; Karasik,B.S.; Pereverzev,S.V.; Olaya, D.; Gershenson, M.E.; Frunzio, L.; Prober, D.E. |
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Energy resolution of terahertz single-photon-sensitive bolometric detectors |
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Journal Article |
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2010 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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96 |
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8 |
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083505 - 083505-3 |
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We report measurements of the energy resolution of ultrasensitive superconducting bolometric detectors. The device is a superconducting titanium nanobridge with niobium contacts. A fast microwave pulse is used to simulate a single higher-frequency photon, where the absorbed energy of the pulse is equal to the photon energy. This technique allows precise calibration of the input coupling and avoids problems with unwanted background photons. Present devices have an intrinsic full-width at half-maximum energy resolution of approximately 23 THz, near the predicted value due to intrinsic thermal fluctuation noise. |
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RPLAB @ akorneev @ |
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601 |
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Barends, R.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M. |
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Title |
Current-induced vortex unbinding in bolometer mixers |
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Journal Article |
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2005 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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87 |
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263506 (1 to 3) |
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HEB mixer numerical model, HEB model, IV-curves, vortex-antivortex, Berezinskii–Kosterlitz–Thouless theory, diffusion cooling channel, diffusion channel, distributed HEB model, distributed model, self-heating effect, temperature profile |
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We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both low and high bias and for small as well as large devices. It is assumed that the current dependence is due to vortex-antivortex unbinding as described in the Berezinskii–Kosterlitz–Thouless theory. The presented approach will be useful in guiding device optimization for noise and bandwidth. |
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604 |
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Sekine, Norihiko; Hosako, Iwao |
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Intensity modulation of terahertz quantum cascade lasers under external light injection |
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Journal Article |
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2009 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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95 |
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201106(1-3) |
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QCL modulation, THz, terahertz |
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We investigated the light-current characteristics of terahertz (THz) quantum cascade lasers under external light injection, which excites interband transitions in the active materials. It was found that the amount of reduction in the THz power was constant for all injection currents above threshold, and the dependence of the reduction amount on the wavelength of the external light was observed to show a resonancelike feature. The dominant intensity modulation mechanism was found to be the loss change caused by interband transitions in the active region. Further, the effective coupling efficiency plays an important role in the intensity modulation. |
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630 |
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Mannino, Giovanni; Spinella, Corrado; Ruggeri, Rosa; La Magna, Antonino; Fisicaro, Giuseppe; Fazio, Enza; Neri, Fortunato; Privitera, Vittorio |
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Title |
Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation |
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2010 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
97 |
Issue |
2 |
Pages |
3 |
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Annealing |
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We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing. |
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Annealing |
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RPLAB @ gujma @ |
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691 |
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Zhang, W.; Khosropanah, P.; Gao, J. R.; Kollberg, E. L.; Yngvesson, K. S.; Bansal, T.; Barends, R.; Klapwijk, T. M. |
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Title |
Quantum noise in a terahertz hot electron bolometer mixer |
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Journal Article |
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2010 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
96 |
Issue |
11 |
Pages |
111113-(1-3) |
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Keywords |
HEB mixer, quantum limit, quantum noise, vacuum box, THz, Terahertz |
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We have measured the noise temperature of a single, sensitive superconducting NbN hot electron bolometer (HEB) mixer in a frequency range from 1.6 to 5.3 THz, using a setup with all the key components in vacuum. By analyzing the measured receiver noise temperature using a quantum noise (QN) model for HEB mixers, we confirm the effect of QN. The QN is found to be responsible for about half of the receiver noise at the highest frequency in our measurements. The beta-factor (the quantum efficiency of the HEB) obtained experimentally agrees reasonably well with the calculated value. |
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624 |
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Baek, Burm; Lita, Adriana E.; Verma, Varun; Nam, Sae Woo |
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Superconducting a-WxSi1–x nanowire single-photon detector with saturated internal quantum efficiency from visible to 1850 nm |
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Journal Article |
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2011 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
98 |
Issue |
25 |
Pages |
3 |
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SNSPD |
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We have developed a single-photon detector based on superconducting amorphous tungsten–silicon alloy (a-WxSi1–x) nanowire. Our device made from a uniform a-WxSi1–x nanowire covers a practical detection area (16 μm×16 μm) and shows high sensitivity featuring a plateau of the internal quantum efficiencies, i.e., efficiencies of generating an electrical pulse per absorbed photon, over a broad wavelength and bias range. This material system for superconducting nanowire detector technology could overcome the limitations of the prevalent nanowire devices based on NbN and lead to more practical, ideal single-photon detectors having high efficiency, low noise, and high count rates. |
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RPLAB @ gujma @ |
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665 |
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Author |
Marsili, Francesco; Najafi, Faraz; Herder, Charles; Berggren, Karl K. |
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Title |
Electrothermal simulation of superconducting nanowire avalanche photodetectors |
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Journal Article |
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2011 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
98 |
Issue |
9 |
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3 |
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SNAP |
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We developed an electrothermal model of NbN superconducting nanowire avalanche photodetectors (SNAPs) on sapphire substrates. SNAPs are single-photon detectors consisting of the parallel connection of N superconducting nanowires. We extrapolated the physical constants of the model from experimental data and we simulated the time evolution of the device resistance, temperature and current by solving two coupled electrical and thermal differential equations describing the nanowires. The predictions of the model were in good quantitative agreement with the experimental results. |
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RPLAB @ gujma @ |
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658 |
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Gaggero, A.; Nejad, S. Jahanmiri; Marsili, F.; Mattioli, F.; Leoni, R.; Bitauld, D.; Sahin, D.; Hamhuis, G. J.; Nötzel, R.; Sanjines, R.; Fiore, A. |
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Title |
Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications |
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Journal Article |
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2010 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
97 |
Issue |
15 |
Pages |
3 |
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SSPD |
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We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K. |
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RPLAB @ gujma @ |
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681 |
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Siddiqi, I.; Prober, D. E. |
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Nb–Au bilayer hot-electron bolometers for low-noise THz heterodyne detection |
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2004 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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Volume |
84 |
Issue |
8 |
Pages |
1404 |
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HEB, mixers, dynamic range, saturation, LO power, local oscillator power, Nb |
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The sensitivity of present Nb diffusion-cooled hot-electron bolometer (HEB) mixers is not quantum limited, and can be improved by reducing the superconducting transition temperature TC. Lowering TC reduces thermal fluctuations, resulting in a decrease of the mixer noise temperature TM. However, lower TC mixers have reduced dynamic range and saturate more easily due to background noise. We present 30 GHz microwave measurements on a bilayer HEB system, Nb–Au, in which TC can be tuned with Au layer thickness to obtain the maximum sensitivity for a given noise background. These measurements are intended as a guide for the optimization of THz mixers. Using a Nb–Au mixer with TC = 1.6 K, we obtain TM = 50 K with 2 nW of local oscillator (LO) power. Good mixer performance is observed over a wide range of LO power and bias voltage and such a device should not exhibit saturation in a THz receiver. |
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0003-6951 |
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571 |
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Sprengers, J. P.; Gaggero, A.; Sahin, D.; Jahanmirinejad, S.; Frucci, G.; Mattioli, F.; Leoni, R.; Beetz, J.; Lermer, M.; Kamp, M.; Höfling, S.; Sanjines, R.; Fiore A. |
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Waveguide superconducting single-photon detectors for integrated quantum photonic circuits |
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2011 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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Volume |
99 |
Issue |
18 |
Pages |
181110(1-3) |
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optical waveguides, waveguide SSPD |
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The monolithic integration of single-photon sources, passive optical circuits, and single-photon detectors enables complex and scalable quantum photonic integrated circuits, for application in linear-optics quantum computing and quantum communications. Here, we demonstrate a key component of such a circuit, a waveguide single-photon detector. Our detectors, based on superconducting nanowires on GaAs ridge waveguides, provide high efficiency (~0%) at telecom wavelengths, high timing accuracy (~0 ps), and response time in the ns range and are fully compatible with the integration of single-photon sources, passive networks, and modulators. |
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