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Gerecht, E., Musante, C. F., Jian, H., Yngvesson, K. S., Dickinson, J., Waldman, J., et al. (1998). Measured results for NbN phonon-cooled hot electron bolometric mixers at 0.6-0.75 THz, 1.56 THz, and 2.5 THz. In Proc. 9th Int. Symp. Space Terahertz Technol. (pp. 105–114).
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Rodriguez-Morales, F., Zannoni, R., Nicholson, J., Fischetti, M., Yngvesson, K. S., & Appenzeller, J. (2006). Direct and heterodyne detection of microwaves in a metallic single wall carbon nanotube. Appl. Phys. Lett., 89(8), 083502.
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Gerecht, E., Musante, C. F., Jian, H., Zhuang, Y., Yngvesson, K. S., Dickinson, J., et al. (1999). Improved characteristics of NbN HEB mixers integrated with log-periodic antennas. In Proc. 10th Int. Symp. Space Terahertz Technol. (pp. 200–207).
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Gerecht, E., Musante, C. F., Yngvesson, K. S., Waldman, J., Gol'tsman, G. N., Yagoubov, P. A., et al. (1997). Optical coupling and conversion gain for NbN HEB mixer at THz frequencies. In Proc. 4-th Int. Semicond. Device Research Symp. (pp. 47–50).
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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Goltsman, G. N., Gershenson, E. M., & Yngvesson, K. S. (1997). Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range. In Proc. 4-th Int. Semicond. Device Research Symp. (pp. 55–58).
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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Gol'tsman, G. N., Voronov, B. M., Gershenzon, E. M., et al. (1997). Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure. In Proc. 4-th Int. Semicond. Device Research Symp. (pp. 163–166).
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Svechnikov, S. I., Okunev, O. V., Yagoubov, P. A., Gol'tsman, G. N., Voronov, B. M., Cherednichenko, S. I., et al. (1997). 2.5 THz NbN hot electron mixer with integrated tapered slot antenna. IEEE Trans. Appl. Supercond., 7(2), 3548–3551.
Abstract: A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.
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Cherednichenko, S., Kroug, M., Yagoubov, P., Merkel, H., Kollberg, E., Yngvesson, K. S., et al. (2000). IF bandwidth of phonon cooled HEB mixers made from NbN films on MgO substrates. In Proc. 11th Int. Symp. Space Terahertz Technol. (pp. 219–227).
Abstract: An investigation of gain and noise bandwidth of phonon-cooled hot-electron bolometric (HEB) mixers is presented. The radiation coupling to the mixers is quasioptical through either a spiral or twin-slot antenna. A maximum gain bandwidth of 4.8 GHz is obtained for mixers based on a 3.5 nm thin NbN film with Tc= 10 K. The noise bandwidth is 5.6 GHz, at the moment limited by parasitic elements in the, device mount fixture. At 0.65 THz the DSB receiver noise temperature is 700-800 К in the IF band 1-2 GHz, and 1150-2700 К in the band 3.5-7 GHz.
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Verevkin, A. A., Ptitsina, N. G., Chulcova, G. M., Gol'tsman, G. N., Gershenzon, E. M., & Yngvesson, K. S. (1996). Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions. Surface Science, 361-362, 569–573.
Abstract: For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed.
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Karasik, B. S., Gol'tsman, G. N., Voronov, B. M., Svechnikov, S. I., Gershenzon, E. M., Ekstrom, H., et al. (1995). Hot electron quasioptical NbN superconducting mixer. IEEE Trans. Appl. Supercond., 5(2), 2232–2235.
Abstract: Hot electron superconductor mixer devices made of thin NbN films on SiO/sub 2/-Si/sub 3/N/sub 4/-Si membrane have been fabricated for 300-350 GHz operation. The device consists of 5-10 parallel strips each 5 /spl mu/m long by 1 /spl mu/m wide which are coupled to a tapered slot-line antenna. The I-V characteristics and position of optimum bias point were studied in the temperature range 4.5-8 K. The performance of the mixer at higher temperatures is closer to that predicted by theory for uniform electron heating. The intermediate frequency bandwidth versus bias has also been investigated. At the operating temperature 4.2 K a bandwidth as wide as 0.8 GHz has been measured for a mixer made of 6 nm thick film. The bandwidth tends to increase with operating temperature. The performance of the NbN mixer is expected to be better for higher frequencies where the absorption of radiation should be more uniform.
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