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	Author	Smirnov, A. V.; Larionov, P. A.; Finkel, M. I.; Maslennikov, S. N.; Voronov, B. M.; Gol'tsman, G. N.
	Title	NbZr films for THz phonon-cooled HEB mixers			Type	Conference Article
	Year	2008	Publication	Proc. 19^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 19^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	44-47
	Keywords	HEB, NbZr, material search
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Groningen, Netherlands	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	577
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	Author	Kaurova, N. S.; Finkel, M. I.; Maslennikov, S. N.; Vahtomin, Yu. B.; Antipov, S. V.; Smirnov, K. V.; Voronov, B. M.; Gol'tsman, G. N.; Ilyin, K. S.
	Title	Submillimeter mixer based on YBa₂Cu₃O_7-x thin film			Type	Conference Article
	Year	2004	Publication	Proc. 1-st conf. Fundamental problems of high temperature superconductivity	Abbreviated Journal
	Volume		Issue		Pages	291
	Keywords	HTS, HEB mixer
	Abstract
	Address	Moscow-Zvenigorod
	Corporate Author				Thesis
	Publisher		Place of Publication	Moscow-Zvenigorod	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	355
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	Author	Ryabchun, S. A.; Tretyakov, I. V.; Finkel, M. I.; Maslennikov, S. N.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Gol'tsman, G. N.
	Title	NbN phonon-cooled hot-electron bolometer mixer with additional diffusion cooling			Type	Conference Article
	Year	2009	Publication	Proc. 20^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 20th ISSTT
	Volume		Issue		Pages	151-154
	Keywords	HEB, mixer, bandwidth, noise temperatue, in-situ contacts, in situ contacts
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Charlottesville, USA	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	590
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	Author	Antipov, S. V.; Svechnikov, S. I.; Smirnov, K. V.; Vakhtomin, Y. B.; Finkel, M. I.; Goltsman, G. N.; Gershenzon, E. M.
	Title	Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz			Type	Journal Article
	Year	2001	Publication	Physics of Vibrations	Abbreviated Journal	Physics of Vibrations
	Volume	9	Issue	4	Pages	242-245
	Keywords	NbN HEB mixers
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1069-1227	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1550
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	Author	Finkel, M.; Thierschmann, H. R.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M.
	Title	Branchline and directional THz coupler based on PECVD SiNx-technology			Type	Conference Article
	Year	2016	Publication	41st IRMMW-THz	Abbreviated Journal	41st IRMMW-THz
	Volume		Issue		Pages
	Keywords	microstrip, fixtures, coplanar waveguides, couplers, standards, probes, dielectrics
	Abstract	A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2162-2035	ISBN	978-1-4673-8485-8	Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	7758586			Serial	1295
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	Author	Tret’yakov, I. V.; Ryabchun, S. A.; Kaurova, N. S.; Larionov, P. A.; Lobastova, A. A.; Voronov, B. M.; Finkel, M. I.; Gol’tsman, G. N.
	Title	Optimum absorbed heterodyne power for superconducting NbN hot-electron bolometer mixer			Type	Journal Article
	Year	2010	Publication	Tech. Phys. Lett.	Abbreviated Journal	Tech. Phys. Lett.
	Volume	36	Issue	12	Pages	1103-1105
	Keywords	NbN HEB mixer
	Abstract	Absorbed heterodyne power has been measured in a low-noise broadband hot-electron bolometer (HEB) mixer for the terahertz range, operating on the effect of electron heating in the resistive state of an ultrathin superconducting NbN film. It is established that the optimum absorbed heterodyne power for the HEB mixer operating at 2.5 THz is about 100 nW.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-7850	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1389
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	Author	Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G.
	Title	Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation			Type	Journal Article
	Year	2015	Publication	J. Appl. Phys.	Abbreviated Journal	J. Appl. Phys.
	Volume	118	Issue	19	Pages	194303
	Keywords	terahertz detectors, asymmetric carbon nanotubes, CNT
	Abstract	Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-8979	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1169
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	Author	Tretyakov, I.; Maslennikov, S.; Semenov, A.; Safir, O.; Finkel, M.; Ryabchun, S.; Kaurova, N.; Voronov, B.; Goltsman, G.; Klapwijk, T. M.
	Title	Impact of operating conditions on noise and gain bandwidth of NbN HEB mixers			Type	Conference Article
	Year	2015	Publication	Proc. 26^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 26^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	39
	Keywords	NbN HEB mixers
	Abstract	Hot-electron bolometer mixers (HEB’s) are the most promising devices as mixing element for terahertz spectroscopy and astronomy at frequencies beyond 1.4 THz. They have a low noise temperature and low demands on local oscillator (LO) power. 1,2 An important limitation is the IF bandwidth, of the order of a few GHz, and which in principle depends on energy relaxation due to electron- phonon processes and on diffusion-cooling. It has been proposed by Prober that a reduction in length of the HEB would lead to an increased bandwidth. 3 This appeared to be achieved by Tretyakov et al by measuring the gain bandwidth close to the critical temperature of the NbN. 2 Unfortunately, the noise bandwidth of similar devices operated at temperatures around 4.2 K appear not depend on the length. The fundamental problem to be addressed is the position-dependent superconducting state of the HEB- devices under operating conditions, which determines the conditions for the cooling of the hot quasiparticles. Some progress has been made by Barends et al in a semi-empirical model to describe the I,V curves under operating conditions at a bath temperature around 4.2 K. 4 In more recent work Vercruyssen et al have analyzed the I,V curve, without any LO-equivalent bias, of a model NSN system. 5 This work suggests that the most appropriate model for an HEB under operating conditions is that of a potential-well in the superconducting gap in the center of the NbN, analogous the bimodal superconducting state described by Vercruyssen et al. Hot quasiparticles in the well can not diffuse out and can only cool by electron-phonon processes, those with higher energies than the heights of the walls of the well can diffuse out. Using this working hypothesis we have carried out experiments on a sub-micrometer NbN bridge connected to a gold (Au) planar spiral antenna. An in situ process is used to deposit Au on NbN. The Au is removed in the center to define the uncovered NbN, which will act as the superconducting mixer itself. The antenna is deposited on the remaining Au layer on the NbN. The Au contacts suppress the energy gap of the NbN film located underneath the gold layer 7,8 . The measured resistive transition is shown in Fig.1. It clearly shows a T c of the bilayer at 6.2 K and the resistive transition of the NbN itself around 9 K. In addition we show the measured noise bandwidth (red squares) for different bath temperatures. Clearly the noise bandwidth increases strongly by increasing the bath temperature from 5 K to 8 K, up to 13 GHz. We interpret this pattern as evidence for improved out-diffusion of hot electrons due to normal banks and a shallow superconducting potential well compared to k B T. As expected the noise temperature in this regime is much bigger than when biased at 4.2 K. R EFERENCES 1 W. Zhang, P. Khosropanah, J. R. Gao, E. L. Kollberg, K. S. Yngvesson, T. Bansal, R. Barends, and T. M. Klapwijk Appl. Phys. Lett. 96, 111113, (2010). 2 Ivan Tretyakov, Sergey Ryabchun, Matvey Finkel, Anna Maslennikova, Natalia Kaurova, Anastasia Lobastova, Boris Voronov, and Gregory Gol’tsman Appl. Phys. Lett. 98, 033507 (2011). 3 D. E. Prober, Appl. Phys. Lett. 62, 2119 (1992). 4 R. Barends, M. Hajenius, J. R. Gao, and T. M. Klapwijk, Appl. Phys. Lett. 87, 263506 (2005). 5 N. Vercruyssen, T. G. A. Verhagen, M. G. Flokstra, J. P. Pekola, and T. M. Klapwijk Physical Review B 85, 224503 (2012).
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1159
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	Author	Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N.
	Title	The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer			Type	Journal Article
	Year	2003	Publication	J. of communications technol. & electronics	Abbreviated Journal	J. of communications technol. & electronics
	Volume	48	Issue	6	Pages	671-675
	Keywords	NbN HEB mixers
	Abstract	Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
	Address
	Corporate Author				Thesis
	Publisher	MAIK Nauka/Interperiodica, Birmingham, AL	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1064-2269	ISBN		Medium
	Area		Expedition		Conference
	Notes	https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO)			Approved	no
	Call Number	Vakhtomin2003			Serial	1522
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	Author	Gol'tsman, G.; Maslennikov, S.; Finkel, M.; Antipov, S.; Kaurova, N.; Grishina, E.; Polyakov, S.; Vachtomin, Y.; Svechnikov, S.; Smirnov, K.; Voronov, B.
	Title	Nanostructured ultrathin NbN film as a terahertz hot-electron bolometer mixer			Type	Conference Article
	Year	2006	Publication	Proc. MRS	Abbreviated Journal	Proc. MRS
	Volume	935	Issue		Pages	210 (1 to 6)
	Keywords	NbN HEB mixers
	Abstract	Planar spiral antenna coupled and directly lens coupled NbN HEB mixer structures are studied. An additional MgO buffer layer between the superconducting film and Si substrate is introduced. The buffer layer enables us to increase the gain bandwidth of a HEB mixer due to better acoustic transparency. The gain bandwidth is widened as NbN film thickness decreases and amounts to 5.2 GHz. The noise temperature of antenna coupled mixer is 1300 and 3100 K at 2.5 and 3.8 THz respectively. The structure and composition of NbN films is investigated by X-ray diffraction spectroscopy methods. Noise performance degradation at LO frequencies more than 3 THz is due to the use of a planar antenna and signal loss in contacts between the antenna and the sensitive NbN bridge. The mixer is reconfigured for operation at higher frequencies in a manner that receiver’s noise temperature is only 2300 K (3 times of quantum limit) at LO frequency of 30 THz.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0272-9172	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1440
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	Author	Svechnikov, S. I.; Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Y. B.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Y. P.; Kaurova, N. S.; Voronov, B. M.; Gol’tsman, G. N.
	Title	Superconducting hot electron bolometer mixer for middle IR range			Type	Conference Article
	Year	2006	Publication	Proc. 16th Int. Crimean Microwave and Telecommunication Technology	Abbreviated Journal	Proc. 16th Int. Crimean Microwave and Telecommunication Technology
	Volume	2	Issue		Pages	686-687
	Keywords	IR NbN HEB mixer, detector, GaAs substrate
	Abstract	The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	4023440			Serial	1297
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	Author	Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Yu. P.; Kaurova, N. S.; Voronov, B. M.; Gol'tsman, G. N.
	Title	Hot electron bolometer mixer for 20 – 40 THz frequency range			Type	Conference Article
	Year	2005	Publication	Proc. 16^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 16^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	393-397
	Keywords	IR NbN HEB mixers
	Abstract	The developed HEB mixer was based on a 5 nm thick NbN film deposited on a GaAs substrate. The active area of the film was patterned as a 30×20 μm 2 strip and coupled with a 50 Ohm coplanar line deposited in situ. An extended hemispherical germanium lens was used to focus the LO radiation on the mixer. The responsivity of the mixer was measured in a direct detection mode in the 25÷64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 μm wavelength CW CO 2 laser was utilized as a local oscillator.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Göteborg, Sweden	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	369
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	Author	Ozhegov, R. V.; Gorshkov, K. N.; Vachtomin, Y. B.; Smirnov, K. V.; Finkel, M. I.; Goltsman, G. N.; Kiselev, O. S.; Kinev, N. V.; Filippenko, L. V.; Koshelets, V. P.
	Title	Terahertz imaging system based on superconducting heterodyne integrated receiver			Type	Conference Article
	Year	2014	Publication	Proc. THz and Security Applications	Abbreviated Journal	Proc. THz and Security Applications
	Volume		Issue		Pages	113-125
	Keywords	SIS mixer, SIR, THz imaging
	Abstract	The development of terahertz imaging instruments for security systems is on the cutting edge of terahertz technology. We are developing a THz imaging system based on a superconducting integrated receiver (SIR). An SIR is a new type of heterodyne receiver based on an SIS mixer integrated with a flux-flow oscillator (FFO) and a harmonic mixer which is used for phase-locking the FFO. Employing an SIR in an imaging system means building an entirely new instrument with many advantages compared to traditional systems. In this project we propose a prototype THz imaging system using an 1 pixel SIR and 2D scanner. At a local oscillator frequency of 500 GHz the best noise equivalent temperature difference (NETD) of the SIR is 10 mK at an integration time of 1 s and a detection bandwidth of 4 GHz. The scanner consists of two rotating flat mirrors placed in front of the antenna consisting of a spherical primary reflector and an aspherical secondary reflector. The diameter of the primary reflector is 0.3 m. The operating frequency of the imaging system is 600 GHz, the frame rate is 0.1 FPS, the scanning area is 0.5 × 0.5 m2, the image resolution is 50 × 50 pixels, the distance from an object to the scanner was 3 m. We have obtained THz images with a spatial resolution of 8 mm and a NETD of less than 2 K.
	Address
	Corporate Author				Thesis
	Publisher	Springer Netherlands	Place of Publication	Dordrecht	Editor	Corsi, C.; Sizov, F.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	978-94-017-8828-1	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1368
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	Author	Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V.
	Title	Generation of nanosecond terahertz pulses by the optical rectification method			Type	Journal Article
	Year	2012	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	96	Issue	2	Pages	94-97
	Keywords	optical rectification, lithium niobate crystal
	Abstract	The possibility of the generation of quasi-cw terahertz radiation by the optical rectification method for broad-band Fourier unlimited nanosecond laser pulses has been experimentally demonstrated. The broadband radiation of a LiF dye-center laser is used as a pump source of a nonlinear optical oscillator. The energy efficiency of terahertz optical frequency conversion in a periodically polarized lithium niobate crystal is 4 × 10−9 at a pump power density of 7 MW/cm2.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-3640	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1377
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	Author	Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Voronov, B. M.; Finkel, M.; Klapwijk, T. M.; Goltsman, G.
	Title	Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-THz radiation			Type	Abstract
	Year	2014	Publication	Proc. 25^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 25^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	71
	Keywords	carbon nanotubes, CNT
	Abstract	This work reports on the voltage response of asymmetric carbon nanotube devices to sub-THz radiation at the frequency of 140 GHz. The devices contain CNT’s, which are over their length partially suspended and partially Van der Waals bonded to a SiO 2 substrate, causing a difference in thermal contact. Different heat sinking of CNTs by source and drain gives rise to temperature gradient and consequent thermoelectric power (TEP) as such a device is exposed to the sub-THz radiation. Sign of the DC signal, its power and gate voltage dependence observed at room temperature are consistent with this scenario. At liquid helium temperature the observed response is more complex. DC voltage signal of an opposite sign is observed in a narrow range of gate voltages at low temperatures and under low radiation power. We argue that this may indicate a true photovoltaic response from small gap (less than 10meV) CNT’s, an effect never reported before. While it is not clear if the observed effects can be used to develop efficient THz detectors we note that the responsivity of our devices exceeds that of CNT based devices in microwave or THz range reported before at room temperature. Besides at 4.2 K notable increase of the sample conductance (at least four-fold) is observed. Our recent results with asymmetric carbon nanotube devices response to THz radiation (2.5 THz) will also be presented.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1361
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