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Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Baryshev, A.; Kooi, J.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol’tsman, G. |
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Title |
Hot electron bolometer mixers with improved interfaces: sensitivity, LO power and stability |
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Conference Article |
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Year |
2004 |
Publication |
Proc. 15th Int. Symp. Space Terahertz Technol. |
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Proc. 15th Int. Symp. Space Terahertz Technol. |
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17-24 |
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NbN HEB mixers |
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We study twin slot antenna coupled NbN hot electron bolometer mixers with an improved contact structure and a small volume, ranging from 1 µm × 0.1 µm to 2 × 0.3 µm. We obtain a DSB receiver noise temperature of 900 K at 1.6 THz and 940 K at 1.9 THz. To explore the practical usability of such small HEB mixers we evaluate the LO power requirement, the sensitivity and the stability. We find that the LO power requirement of the smallest mixers is reduced to about 240 nW at the Si lens of the mixer. This value is larger than expected from the isothermal technique and the known losses in the lens by a factor of 3-3.5. The stability of these receivers is characterized using a measurement of the Allan Variance. We find an Allan time of 0.5 sec. in an 80 MHz bandwidth. A small increase in stability can be reached by using a higher bias at the expense of a significant amount of sensitivity. The stability is sufficient for spectroscopic applications in a 1 MHz bandwidth at a 1 Hz chopping frequency. |
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1491 |
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Vercruyssen, N.; Verhagen, T. G. A.; Flokstra, M. G.; Pekola, J. P.; Klapwijk, T. M. |
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Title |
Evanescent states and nonequilibrium in driven superconducting nanowires |
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2012 |
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Phys. Rev. B |
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Phys. Rev. B |
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85 |
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224503(1-10) |
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Al HEB, Al superconducting nanowire, global state, bimodal state, quasiclassical kinetic equations, Usadel equation |
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We study the nonlinear response of current transport in a superconducting diffusive nanowire between normal reservoirs. We demonstrate theoretically and experimentally the existence of two different superconducting states appearing when the wire is driven out of equilibrium by an applied bias, called the global and bimodal superconducting states. The different states are identified by using two-probe measurements of the wire, and measurements of the local density of states with tunneling probes. The analysis is performed within the framework of the quasiclassical kinetic equations for diffusive superconductors. |
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898 |
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Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte 2, P. A. J.; Voronov, B.; Gol’tsman, G. |
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Title |
Increased bandwidth of NbN phonon cooled hot electron bolometer mixers |
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Conference Article |
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Year |
2004 |
Publication |
Proc. 15th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 15th Int. Symp. Space Terahertz Technol. |
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381-386 |
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NbN HEB mixers, IF bandwidth |
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We study experimentally the IF gain bandwidth of NbN phonon-cooled hot-electron-bolometer (HEB) mixers for a set of devices with different contact structures but an identical NbN film. We observe that the IF bandwidth depends strongly on the exact contact structure and find an IF gain bandwidth of 6 GHz for a device with an additional superconducting layer (NbTiN) in between the active NbN film and the gold contact to the antenna. These results contradict the common opinion that the IF bandwidth is determined by the phonon-escape time between the NbN film and the substrate. Hence we calculate the IF gain bandwidth of a superconducting film using a two-temperature model. We find that the bandwidth increases strongly with operating temperature and is not limited by the phonon escape time. This is because of strong temperature dependence of the phonon specific heat in the NbN film. |
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1494 |
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Gao, J. R.; Hovenier, J. N.; Yang, Z. Q.; Baselmans, J. J. A.; Baryshev, A.; Hajenius, M.; Klapwijk, T. M.; Adam, A. J. L.; Klaassen, T. O.; Williams, B. S.; Kumar, S.; Hu, Q.; Reno, J. L. |
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Title |
Terahertz heterodyne receiver based on a quantum cascade laser and a superconducting bolometer |
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2005 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
86 |
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244104 (1 to 3) |
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HEB, QCL |
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We report the first demonstration of an all solid-stateheterodyne receiver that can be used for high-resolution spectroscopy above 2THz suitable for space-based observatories. The receiver uses a NbN superconducting hot-electron bolometer as mixer and a quantum cascade laser operating at 2.8THz as local oscillator. We measure a double sideband receiver noise temperature of 1400K at 2.8THz and 4.2K, and find that the free-running QCL has sufficient power stability for a practical receiver, demonstrating an unprecedented combination of sensitivity and stability. |
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905 |
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Hajenius, M.; Yang, Z. Q.; Gao, J. R.; Baselmans, J. J. A.; Klapwijk, T. M.; Voronov, B.; Gol'tsman, G. |
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Title |
Optimized sensitivity of NbN hot electron bolometer mixers by annealing |
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Journal Article |
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2007 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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Volume |
17 |
Issue |
2 |
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399-402 |
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NbN HEB mixers |
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We report that the heterodyne sensitivity of superconducting hot-electron bolometers (HEBs) increases by 25-30% after annealing at 85degC in high vacuum. The devices studied are twin-slot antenna coupled mixers with a small area NbN bridge of 1 mum times 0.15 mum, above which there is a SiO 2 passivation layer. The mixer noise temperature, gain, and resistance versus temperature curve of a HEB before and after annealing are compared and analysed. We show that the annealing reduces the intrinsic noise of the mixer by 37% and makes the superconducting transition of the bridge and the contacts sharper. We argue that the reduction ofthe noise is mainly due to the improvement of the transparency of the contact/film interface. The lowest receiver noise temperature of 700 K is measured at a local oscillator frequency of 1.63 THz and at a bath temperature of 4.2 K. |
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1051-8223 |
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1426 |
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Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. |
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Title |
Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation |
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Journal Article |
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2013 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
103 |
Issue |
18 |
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181121 (1 to 5) |
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carbon nanotubes, CNT, THz radiation, SiO2 substrate |
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We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a. |
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0003-6951 |
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1171 |
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Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. |
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Title |
The electron-phonon relaxation time in thin superconducting titanium nitride films |
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2013 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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103 |
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25 |
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252602 (1 to 4) |
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disordered TiN films, electron-phonon relaxation time |
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We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.
The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159. |
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RPLAB @ kovalyuk @ |
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941 |
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Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. |
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Relaxation of the resistive superconducting state in boron-doped diamond films |
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2016 |
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Phys. Rev. B |
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Phys. Rev. B |
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93 |
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6 |
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064506 |
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boron-doped diamond films, resistive superconducting state, relaxation time |
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We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc. |
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1167 |
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Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Voronov, B.; Grishina, E.; Klapwijk, T. M.; Gol'tsman, G.; Zorman, C. A. |
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Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? |
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2006 |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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187-189 |
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NbN HEB mixers |
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We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm). |
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Zolotov, P. I.; Semenov, A. V.; Divochiy, A. V.; Goltsman, G. N.; Romanov, N. R.; Klapwijk, T. M. |
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Dependence of photon detection efficiency on normal-state sheet resistance in marginally superconducting films of NbN |
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2021 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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31 |
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5 |
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1-5 |
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NbN SSPD, SNSPD |
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We present an extensive set of data on nanowire-type superconducting single-photon detectors based on niobium-nitride (NbN) to establish the empirical correlation between performance and the normal-state resistance per square. We focus, in particular, on the bias current, compared to the expected depairing current, needed to achieve a near-unity detection efficiency for photon detection. The data are discussed within the context of a model in which the photon energy triggers the movement of vortices i.e. superconducting dissipation, followed by thermal runaway. Since the model is based on the non-equilibrium theory for conventional superconductors deviations may occur, because the efficient regime is found when NbN acts as a marginal superconductor in which long-range phase coherence is frustrated. |
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Bueno, J.; Coumou, P. C. J. J.; Zheng, G.; de Visser, P. J.; Klapwijk, T. M.; Driessen, E. F. C.; Doyle, S.; Baselmans, J. J. A |
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Anomalous response of superconducting titanium nitride resonators to terahertz radiation |
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2014 |
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Appl. Phys. Lett. |
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105 |
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192601 (1 to 5) |
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KID, TiN, NEP, disordered superconductors, inhomogeneous state |
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We present an experimental study of kinetic inductance detectors (KIDs) fabricated of atomic layer deposited TiN films and characterized at radiation frequencies of 350 GHz. The responsivity to radiation is measured and found to increase with the increase in radiation powers, opposite to what is expected from theory and observed for hybrid niobium titanium nitride/aluminium (NbTiN/Al) and all-aluminium (all-Al) KIDs. The noise is found to be independent of the level of the radiation power. The noise equivalent power improves with higher radiation powers, also opposite to what is observed and well understood for hybrid NbTiN/Al and all-Al KIDs. We suggest that an inhomogeneous state of these disordered superconductors should be used to explain these observations. |
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1068 |
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Shcherbatenko, M.; Tretyakov, I.; Lobanov, Yu.; Maslennikov, S. N.; Kaurova, N.; Finkel, M.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. |
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Nonequilibrium interpretation of DC properties of NbN superconducting hot electron bolometers |
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2016 |
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Appl. Phys. Lett. |
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109 |
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13 |
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132602 |
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HEB mixer, contacts |
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We present a physically consistent interpretation of the dc electrical properties of niobiumnitride (NbN)-based superconducting hot-electron bolometer mixers, using concepts of nonequilibrium superconductivity. Through this, we clarify what physical information can be extracted from the resistive transition and the dc current-voltage characteristics, measured at suitably chosen temperatures, and relevant for device characterization and optimization. We point out that the intrinsic spatial variation of the electronic properties of disordered superconductors, such as NbN, leads to a variation from device to device. |
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1107 |
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Finkel, M.; Thierschmann, H.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M. |
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Performance of THz components based on microstrip PECVD SiNx technology |
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2017 |
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IEEE Trans. THz Sci. Technol. |
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IEEE Trans. THz Sci. Technol. |
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7 |
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6 |
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765-771 |
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transmission line measurements, power transmission lines, dielectrics, couplers, submillimeter wave circuits, coplanar waveguides, micromechanical devices |
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We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope. |
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2156-342X |
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1294 |
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Baselmans, J. J. A.; Baryshev, A.; Reker, S. F.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G. |
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Influence of the direct response on the heterodyne sensitivity of hot electron bolometer mixers |
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2006 |
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J. Appl. Phys. |
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J. Appl. Phys. |
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100 |
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8 |
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084510 (1 to 7) |
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NbN HEB mixers |
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We present a detailed experimental study of the direct detection effect in a small volume (0.15μm×1μm×3.5nm) quasioptical NbN phonon cooled hot electron bolometer mixer at 673GHz. We find that the small signal noise temperature, relevant for an astronomical observation, is 20% lower than the noise temperature obtained using 300 and 77K calibration loads. In a separate set of experiments we show that the direct detection effect is caused by a combination of bias current reduction when switching from the 77 to the 300K
load in combination with the bias current dependence of the receiver gain. The bias current dependence of the receiver gain is shown to be mainly caused by the current dependence of the mixer gain. |
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0021-8979 |
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1442 |
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Baselmans, J. J. A.; Baryshev, A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Voronov, B.; Gol'tsman, G. |
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Influence of the direct response on the heterodyne sensitivity of hot electron bolometer mixers |
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2006 |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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81 |
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NbN HEB mixers |
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We present a detailed experimental study of the direct detection effect in a small volume (0.15pm x lpm) NbN hot electron bolometer mixer. It is a quasioptical mixer with a twin slot antenna designed for 700 GHz and the measurement was done at a LO frequency of 670 GHz. The direct detection effect is characterized by a change in the mixer bias current when switching broadband radiation from a 300 K hot load to a 77 K cold load in a standard Y factor measurement. The result is, depending on the receiver under study, an increase or decrease in the receiver noise temperature. We find that the small signal noise temperature, which is the noise temperature that would be observed without the presence of the direct detection effect, and thus the one that is relevant for an astronomical observation, is 20% lower than the noise temperature obtained using 300 K and 77 K calibration loads. Thus, in our case the direct detection effect reduces the mixer sensitivity. These results are in good agreement with previous measurement at THz frequencies [1]. Other experiments report an increase in mixer sensitivity [2]. To analyze this discrepancy we have designed a separate set of experiments to find out the physical origin of the direct detection effect. Possible candidates are the bias current dependence of the mixer gain and the bias current dependence of the IF match. We measured directly the change in mixer IF match and receiver gain due to the direct detection effect. From these measurements we conclude that the direct detection effect is caused by a combination of bias current reduction when switching form the 77 K to the 300 K load in combination with the bias current dependence of the receiver gain. The bias current dependence of the receiver gain is shown to be mainly caused by the current dependence of the mixer gain. We also find that an increase in receiver sensitivity due to the direct detection effect is only possible if the noise temperature change due to the direct detection is dominated by the mixer-amplifier IF match. [1] J.J.A. Baselmans, A. Baryshev, S.F. Reker, M. Hajenius, J.R. Gao, T.M. Klapwijk, Yu.Vachtomin, S. Maslennikov, S. Antipov, B. Voronov, and G. Gol'tsman., Appl. Phys. Lett. 86, 163503 (2005). [2] S. Svechnokov, A. Verevkin, B. Voronov, E. Menschikov. E. Gershenzon, G. Gol'tsman, 9th Int. Symp. On Space THz. Techn., 45, (1999). |
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