Abstract: Carbon nanotubes (CNTs) belong to the most exciting objects of the nanoworld. Typically, around 1 nm in diameter and several microns long, these cylindrically shaped carbon-based structures exhibit a number of exceptional mechanical, electrical and optical characteristics [1]. In particular, they are promising ultra-small light sources for the next generation of optoelectronic devices, where electrical components are interconnected with photonic circuits.
Few years ago, we demonstrated that electically driven CNTs can serve as waveguide-integrated light sources [2]. Progress in the field of nanotube sorting, dielectrophoretical site-selective deposition and efficient light coupling into underlying substrate has made CNTs suitable for wafer-scale fabrication of active hybrid nanophotonic devices [2,3].
Recently we presented a nanotube-based waveguide integrated light emitters with tailored, exceptionally narrow emission-linewidths and short response times [4]. This allows conversion of electrical signals into well-defined optical signals directly within an optical waveguide, as required for future on-chip optical communication. Schematics and realization of this device is shown in Figure 1. The devices were manufactured by etching a photonic crystal waveguide into a dielectric layer following electron beam lithography. Photonic crystals are nanostructures that are also used by butterflies to give the impression of color on their wings. The same principle has been used in this study to select the color of light emitted by the CNT. The precise dimensions of the structure were numerically simulated to tailor the properties of the final device. Metallic contacts in the vicinity to the waveguide were fabricated to provide electrical access to CNT emitters. Finally, CNTs, sorted by structural and electronic properties, were deposited from a solution across the waveguide using dielectrophoresis, which is an electric-field-assisted deposition technique.

Abstract: Optical-to-electrical conversion, which is the basis of the operation of optical detectors, can be linear or nonlinear. When high sensitivities are needed, single-photon detectors are used, which operate in a strongly nonlinear mode, their response being independent of the number of detected photons. However, photon-number-resolving detectors are needed, particularly in quantum optics, where n-photon states are routinely produced. In quantum communication and quantum information processing, the photon-number-resolving functionality is key to many protocols, such as the implementation of quantum repeaters1 and linear-optics quantum computing2. A linear detector with single-photon sensitivity can also be used for measuring a temporal waveform at extremely low light levels, such as in long-distance optical communications, fluorescence spectroscopy and optical time-domain reflectometry. We demonstrate here a photon-number-resolving detector based on parallel superconducting nanowires and capable of counting up to four photons at telecommunication wavelengths, with an ultralow dark count rate and high counting frequency.