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Author Svechnikov, S. I.; Antipov, S. V.; Vakhtomin, Y. B.; Goltsman, G. N.; Gershenzon, E. M.; Cherednichenko, S. I.; Kroug, M.; Kollberg, E.
Title Conversion and noise bandwidths of terahertz NbN hot-electron bolometer mixers Type Journal Article
Year 2001 Publication Physics of Vibrations Abbreviated Journal Physics of Vibrations
Volume 9 Issue 3 Pages 205-210
Keywords NbN HEB mixers
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ISSN 1069-1227 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1551
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Author Gerecht, E.; Musante, C. F.; Jian, H.; Zhuang, Y.; Yngvesson, K. S.; Dickinson, J.; Goyette, T.; Waldman, J.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
Title Improved characteristics of NbN HEB mixers integrated with log-periodic antennas Type Conference Article
Year 1999 Publication Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 10th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 200-207
Keywords NbN HEB mixers
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Call Number Serial 1574
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Author Schubert, J.; Semenov, A.; Hübers, H.-W.; Gol'tsman, G.; Schwaab, G.; Voronov, B.; Gershenzon, E.
Title Broad-band terahertz NbN hot-electron bolometric mixer Type Conference Article
Year 1999 Publication Inst. Phys. Conf. Abbreviated Journal Inst. Phys. Conf.
Volume 167 Issue Pages 663-666
Keywords NbN HEB mixers
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Area Expedition Conference 4th Europ. Conf. on Appl. Superconductivity, Barcelona, Spain, 14-17 September 1999
Notes Approved no
Call Number Serial 1578
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Author Gerecht, E.; Musante, C. F.; Yngvesson, K. S.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M.
Title Optical coupling and conversion gain for NbN HEB mixer at THz frequencies Type Conference Article
Year 1997 Publication Proc. 4-th Int. Semicond. Device Research Symp. Abbreviated Journal Proc. 4-th Int. Semicond. Device Research Symp.
Volume Issue Pages 47-50
Keywords NbN HEB mixers
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Address Charlottesville, Virginia
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Notes Approved no
Call Number Serial 1601
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Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S.
Title Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure Type Conference Article
Year 1997 Publication Proc. 4-th Int. Semicond. Device Research Symp. Abbreviated Journal Proc. 4-th Int. Semicond. Device Research Symp.
Volume Issue Pages 163-166
Keywords S-2DEG-S HEB mixers, detectors, AlGaAs/GaAs heterostructures, NbN
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Notes Approved no
Call Number Serial 1603
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Author Elantev, Andrey I.; Karasik, Boris S.
Title Noise temperature of a superconducting hot-electron mixer Type Conference Article
Year 1994 Publication Proc. 5th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 5th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 225
Keywords HEB mixers
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Notes Approved no
Call Number Serial 1645
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Author Gershenzon, E. M.; Gol'tsman, G. N.
Title Hot electron superconductive mixers Type Conference Article
Year 1993 Publication Proc. 4th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 4th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 618-622
Keywords HEB mixers
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Notes Approved no
Call Number Serial 1656
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Author Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Lecomte, B.; Dauplay, F.; Krieg, J.-M.; Delorme, Y.; Feret, A.; Hübers, H.-W.; Semenov, A. D.; Gol’tsman, G. N.
Title 2.5 THz multipixel heterodyne receiver based on NbN HEB mixers Type Abstract
Year 2007 Publication Proc. 18th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 18th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 112
Keywords NbN HEB mixers
Abstract (up) A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5μm thick Si3N4 / SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. Measurements of the mixers sensitivity and the input RF band are presented, and compared against calculations.
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Call Number Serial 1419
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Author Cherednichenko, S.; Drakinskiy, V.; Lecomte, B.; Dauplay, F.; Krieg, J.-M.; Delorme, Y.; Feret, A.; Hübers, H.-W.; Semenov, A.D.; Gol’tsman, G.N.
Title Terahertz heterodyne array based on NbN HEB mixers Type Abstract
Year 2008 Publication Proc. 19th Int. Symp. Space Terahertz Technol. Abbreviated Journal
Volume Issue Pages 43
Keywords NbN HEB mixers array
Abstract (up) A 16 pixel heterodyne receiver for 2.5 THz is been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5μm thick Si3N4 / SiO2 membranes. Miniature mirrors (one per pixel) and back short for the antenna were used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4 / SiO 2 membranes was found to be about 3 GHz, when an MgO buffer layers is applied on the membrane. We will also present the progress in the camera heterodyne tests.
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Notes Approved no
Call Number Serial 1411
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Author Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.
Title 2.5 THz NbN hot electron mixer with integrated tapered slot antenna Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 7 Issue 2 Pages 3548-3551
Keywords NbN HEB mixers
Abstract (up) A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.
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ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1595
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