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Author Elmanova, A.; An, P.; Kovalyuk, V.; Golikov, A.; Elmanov, I.; Goltsman, G.
Title Study of silicon nitride O-ring resonator for gas-sensing applications Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012124
Keywords silicon nitride O-ring resonator, ORR
Abstract (up) In this work, we experimentally studied the influence of different gaseous surroundings on silicon nitride O-ring resonator transmission. We compared the obtained results with numerical calculations and theoretical analysis and found a good agreement between them. Our results have a great potential for gas sensing applications, where a compact footprint and high efficiency are desired simultaneously.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1176
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Author Polyakova, M. I.; Korneev, A. A.; Semenov, A. V.
Title Comparison single- and double- spot detection efficiencies of SSPD based to MoSi and NbN films Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012146 (1 to 3)
Keywords NbN SSPD, SNSPD, MoSi
Abstract (up) In this work, we present results of quantum detector tomography of superconducting single photon detector (SSPD) based on MoSi film, and compare them with previously reported data on NbN. We find that for both materials hot spot interaction length coincides with the strip width, and the dependence of single and double-spot detection efficiencies on bias current are compatible with sufficiently large hot-spot size, approaching the strip width.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1787
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Author Zvagelsky, R. D.; Chubich, D. A.; Kolymagin, D. A.; Korostylev, E. V.; Kovalyuk, V. V.; Prokhodtsov, A. I.; Tarasov, A. V.; Goltsman, G. N.; Vitukhnovsky, A. G.
Title Three-dimensional polymer wire bonds on a chip: morphology and functionality Type Journal Article
Year 2020 Publication J. Phys. D: Appl. Phys. Abbreviated Journal J. Phys. D: Appl. Phys.
Volume 53 Issue 35 Pages 355102
Keywords photonic wire bonds, PWB
Abstract (up) Modern microchip-scale transceivers are capable of transmitting data at rates of the order of several terabits per second. In this regard, there is an urgent need to improve the interfaces connecting the chips and extend the bandpass of the interconnections. We use an approach combining silicon nitride nanophotonic circuits with 3D polymer waveguides fabricated by direct laser writing, which can be used as photonic interconnections or photonic wire bonds (PWB). These structures are designed, simulated, fabricated, and optimized for better light transmission at the telecommunication wavelength. An important part of this work is the study of the telecom signal transmission in a 3D polymer waveguide connecting two silicon nitride facing tapers. Two cases are considered: the tapers are one opposite the other or misaligned. Initially, the PWB shape was chosen to be Gaussian and then optimized: the top was circle-shaped and with the lower part still being Gaussian. Transmission losses were measured for both types of waveguides with different shapes. The idea of an optical multi-level crossing for photonic integrated circuits is also suggested as a solution to the problem of interconnections within a single chip.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-3727 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1181
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Author Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S.
Title Helicity-sensitive plasmonic terahertz interferometer Type Journal Article
Year 2020 Publication Nano Lett. Abbreviated Journal Nano Lett.
Volume 20 Issue 10 Pages 7296-7303
Keywords graphene, plasmonic interferometer, radiation helicity, terahertz radiation
Abstract (up) Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials.
Address CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1530-6984 ISBN Medium
Area Expedition Conference
Notes PMID:32903004 Approved no
Call Number Serial 1781
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Author Gorokhov, G.; Bychanok, D.; Gayduchenko, I.; Rogov, Y.; Zhukova, E.; Zhukov, S.; Kadyrov, L.; Fedorov, G.; Ivanov, E.; Kotsilkova, R.; Macutkevic, J.; Kuzhir, P.
Title THz spectroscopy as a versatile tool for filler distribution diagnostics in polymer nanocomposites Type Journal Article
Year 2020 Publication Polymers (Basel) Abbreviated Journal Polymers (Basel)
Volume 12 Issue 12 Pages 3037 (1 to 14)
Keywords THz spectroscopy; nanocomposites, percolation threshold, time-domain spectroscopy, time-domain spectrometer, TDS
Abstract (up) Polymer composites containing nanocarbon fillers are under intensive investigation worldwide due to their remarkable electromagnetic properties distinguished not only by components as such, but the distribution and interaction of the fillers inside the polymer matrix. The theory herein reveals that a particular effect connected with the homogeneity of a composite manifests itself in the terahertz range. Transmission time-domain terahertz spectroscopy was applied to the investigation of nanocomposites obtained by co-extrusion of PLA polymer with additions of graphene nanoplatelets and multi-walled carbon nanotubes. The THz peak of permittivity's imaginary part predicted by the applied model was experimentally shown for GNP-containing composites both below and above the percolation threshold. The physical nature of the peak was explained by the impact on filler particles excluded from the percolation network due to the peculiarities of filler distribution. Terahertz spectroscopy as a versatile instrument of filler distribution diagnostics is discussed.
Address Institute of Photonics, University of Eastern Finland, Yliopistokatu 7, FI-80101 Joensuu, Finland
Corporate Author Thesis
Publisher Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2073-4360 ISBN Medium
Area Expedition Conference
Notes PMID:33353036; PMCID:PMC7767186 Approved no
Call Number Serial 1780
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Author Shcherbatenko, M.; Elezov, M.; Sych, D.; Goltsman, G. N.
Title Optimal fiber optic scheme for sub-SQL quantum receiver realization Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012140
Keywords sub-SQL, below quantum limit, QL, system quantum limit, SQL
Abstract (up) Practical implementation of high-precision quantum measurements is an important problem in modern science. One of the main parts of the quantum receiver is the optical scheme. We developed and tested several optical circuits based on different types of interferometers, namely Sagnac-based scheme, Mach-Zehnder-based scheme, and Michelson-based scheme. All these schemes are assembled with optical fibers and fiber-optic components, since the fiber-optic implementation is closest to application in practical devices. Schemes were evaluated according to two main criteria: extinction and interference stability. On the basis of the obtained data, it can be concluded that the most suitable is the scheme based on the Mach-Zehnder interferometer. In continuous mode, we were able to obtain an interference extinction about 30 dB with acceptable temporal stability.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1265
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Author Antipov, A. V.; Seleznev, V. A.; Vakhtomin, Y. B.; Morozov, P. V.; Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Smirnov, K.
Title Investigation of WSi and NbN superconducting single-photon detectors in mid-IR range Type Conference Article
Year 2020 Publication IOP Conf. Ser.: Mater. Sci. Eng. Abbreviated Journal IOP Conf. Ser.: Mater. Sci. Eng.
Volume 781 Issue Pages 012011 (1 to 5)
Keywords WSi, NbN SSPD, SNSPD
Abstract (up) Spectral characteristics of WSi and NbN superconducting single-photon detectors with different surface resistance and width of nanowire strips have been investigated in the wavelength range of 1.3-2.5 μm. WSi structures with narrower strips demonstrated better performance for detection of single photons in longer wavelength range. The difference in normalized photon count rate for such structures reaches one order of magnitude higher in comparison with structures based on NbN thin films at 2.5 μm.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1757-899X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1799
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Author Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory
Title Silicon nitride photonic crystal cavity coupled with NV-centers in nanodiamonds Type Conference Article
Year 2020 Publication Proc. 32-nd EMSS Abbreviated Journal Proc. 32-nd EMSS
Volume Issue Pages 344-348
Keywords
Abstract (up) The development of integrated quantum photonics requires a high efficient excitation and coupling of a single photon source with on-chip devices. In this paper, we show our results of modelling for high-Q photonic crystal cavity, optimized for zero phonon line emission of NV-centers in nanodiamonds. Modelling was performed for the silicon nitride platform and obtained a quality factor equals to 6136 at 637 nm wavelength.
Address NV-centers, nanodiamonds
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2724-0029 ISBN 978-88-85741-44-7 Medium
Area Expedition Conference 32nd European Modeling & Simulation Symposium
Notes Approved no
Call Number Serial 1840
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Author Ovchinnikov, O. V.; Perepelitsa, A. S.; Smirnov, M. S.; Latyshev, A. N.; Grevtseva, I. G.; Vasiliev, R. B.; Goltsman, G. N.; Vitukhnovsky, A. G.
Title Luminescence of colloidal Ag2S/ZnS core/shell quantum dots capped with thioglycolic acid Type Journal Article
Year 2020 Publication J. Luminescence Abbreviated Journal J. Luminescence
Volume 220 Issue Pages 117008 (1 to 7)
Keywords Ag2S QD, quantum dots
Abstract (up) The features of IR luminescence of colloidal AgS QDs passivated with thioglycolic acid (AgS/TGA) under the formation of AgS/ZnS/TGA core/shell QDs are considered. A 4.5-fold increase in the quantum yield of recombination IR luminescence within the band with a peak at 960 nm (1.29 eV), full width at half maximum of 250 nm (0.34 eV), and the Stokes shift with respect to the exciton absorption of 0.6 eV was found. The increase in the IR luminescence intensity of AgS/ZnS/TGA QDs is accompanied by an increase in the average luminescence lifetime from 2.9 ns to 14.3 ns, which is explained as “healing” of surface trap states during the formation of the ZnS shell. For the first time, the enhancement of the luminescence intensity photodegradation (hereinafter referred to as fatigue) was found during the formation of the AgS/ZnS/TGA core/shell QDs. The luminescence fatigue is irreversible. We conclude that the initial stage of photolysis of the AgS core QDs under laser irradiation plays a key role. Low-atomic photolytic clusters of silver formed on the AgS core QDs act as luminescence quenching centers and do not reveal structural transformations into AgS, provided that the clusters are not in contact with TGA.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0022-2313 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1267
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Author Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K.
Title Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation Type Journal Article
Year 2020 Publication Sci. Rep. Abbreviated Journal Sci. Rep.
Volume 10 Issue 1 Pages 16819
Keywords VN HEB
Abstract (up) The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d approximately 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (omega approximately 0.140 THz) and sources in the IR region (omega approximately 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6-2.7) ns. The studied response of VN structures to IR (omega approximately 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range omega approximately (0.3-6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (deltaE) reached NEP@1MHz approximately 6.3 x 10(-14) W/ radicalHz and deltaE approximately 8.1 x 10(-18) J, respectively.
Address National Research University Higher School of Economics, 20 Myasnitskaya Str., Moscow, 101000, Russia
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2045-2322 ISBN Medium
Area Expedition Conference
Notes PMID:33033360; PMCID:PMC7546726 Approved no
Call Number Serial 1797
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