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Author Title Year Publication Volume Pages
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range 1997 Proc. 4-th Int. Semicond. Device Research Symp. 55-58
Aksaev, E. E.; Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. Prospects for using high-temperature superconductors to create electron bolometers 1989 Pisma v Zhurnal Tekhnicheskoi Fiziki 15 88-93
Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. Kinetics of submillimeter impurity and exciton photoconduction in Ge 1982 Optics and Spectroscopy 52 454-455
Gershenzon, E.; Goltsman, G.; Elantev, A.; Kagane, M. Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it 1978 Izv. Akad. Nauk SSSR, Seriya Fizicheskaya 42 1142-1148
Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. Population of excited-states of small admixtures in germanium 1978 Izv. Akad. Nauk SSSR, Seriya Fizicheskaya 42 1154-1159
Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I. Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors 1978 Izv. Akad. Nauk SSSR, Seriya Fizicheskaya 42 1231-1234
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. Investigation of population and ionization of donor excited states in Ge 1976 Physics of Semiconductors 631-634
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. Investigation of excited donor states in GaAs 1974 Sov. Phys. Semicond. 7 1248-1250
Goltsman, G. Simple method for stabilizing power of submillimetric spectrometer 1972 Pribory i Tekhnika Eksperimenta 136
Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. Germanium hot-electron narrow-band detector 1971 Sov. Radio Engineering And Electronic Physics 16 1346