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Author Galeazzi, Massimiliano
Title Fundamental noise processes in TES devices Type Journal Article
Year 2011 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 21 Issue 3 Pages 267-271
Keywords TES, Johnson noise, phonon noise, excess noise, flux-flow noise, thermal fluctuation noise
Abstract (down) Microcalorimeters and bolometers are noise-limited devices, therefore, a proper understanding of all noise sources is essential to predict and interpret their performance. In this paper, I review the fundamental noise processes contributing to Transition Edge Sensor (TES) microcalorimeters and bolometers and their effect on device performance. In particular, I will start with a simple, monolithic device model, moving to a more complex one involving discrete components, to finally move to today's more realistic, comprehensive model. In addition to the basic noise contribution (equilibrium Johnson noise and phonon noise), TES are significantly affected by extra noise, which is commonly referred to as excess noise. Different fundamental processes have been proposed and investigated to explain the origin of this excess noise, in particular near equilibrium non-linear Johnson noise, flux-flow noise, and internal thermal fluctuation noise. Experimental evidence shows that all three processes are real and contribute, at different levels, to the TES noise, although different processes become important at different regimes. It is therefore time to discard the term “excess noise” and consider these terms part of the “fundamental noise processes” instead.
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Notes Recommended by Klapwijk Approved no
Call Number Serial 914
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Author Stellari, Franco; Song, Peilin
Title Testing of ultra low voltage CMOS microprocessors using the superconducting single-photon detector (SSPD) Type Conference Article
Year 2005 Publication Proc. 12th IPFA Abbreviated Journal Proc. 12th IPFA
Volume Issue Pages 2
Keywords SSPD, CMOS testing
Abstract (down) In F. Stellari and P. Song (2004) the authors have shown a comparison among different detectors used for diagnosing integrated circuits (ICs) by means of the PICA method. In their experiments they used two versions of the SSPD detector (p-SSPD is a prototype version, while c-SSPD is the first commercially available generation of the detector as presented in W. K. Lo et al. (2002), as well as the imaging detector (S-25 photo-multiplier tube (PMT) as discussed in W. G. McMullan (1987)) used in the conventional PICA technique. A microprocessor chip fabricated in a 0.13 μm 1.2 V technology is used to show that c-SSPD provides a significant reduction in acquisition time for the collection of optical waveforms from chips running at very low. In this paper, the authors summarize the main results.
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Corporate Author Thesis
Publisher IEEE Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN 0-7803-9301-5 Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1055
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Author Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
Title Silicon room temperature IR detectors coated with Ag2S quantum dots Type Conference Article
Year 2019 Publication Proc. IWQO Abbreviated Journal Proc. IWQO
Volume Issue Pages 369-371
Keywords silicon detector, quantum dot, IR, surface states
Abstract (down) For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.
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ISSN ISBN 978-5-89513-451-1 Medium
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Notes Approved no
Call Number Serial 1154
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Author Steudle, Gesine A.; Schietinger, Stefan; Höckel, David; Dorenbos, Sander N.; Zadeh, Iman E.; Zwiller, Valery; Benson, Oliver
Title Measuring the quantum nature of light with a single source and a single detector Type Journal Article
Year 2012 Publication Phys. Rev. A Abbreviated Journal
Volume 86 Issue 5 Pages 053814
Keywords SSPD, SNSPD, saturation count rates, dead time, dynamic range
Abstract (down) An elementary experiment in optics consists of a light source and a detector. Yet, if the source generates nonclassical correlations such an experiment is capable of unambiguously demonstrating the quantum nature of light. We realized such an experiment with a defect center in diamond and a superconducting detector. Previous experiments relied on more complex setups, such as the Hanbury Brown and Twiss configuration, where a beam splitter directs light to two photodetectors, creating the false impression that the beam splitter is a fundamentally required element. As an additional benefit, our results provide a simplification of the widely used photon-correlation techniques.
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Publisher American Physical Society Place of Publication Editor
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Notes Approved no
Call Number Serial 1089
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Author Prober, D. E.
Title Superconducting terahertz mixer using a transition-edge microbolometer Type Journal Article
Year 1993 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 62 Issue 17 Pages 2119-2121
Keywords HEB mixer, NbN, TES
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Notes Recommended by Klapwijk Approved no
Call Number Serial 244
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