Abstract: Detectors in THz range with high sensitivity are very essential nowadays in different fields: space technology, atmospheric research, medicine and security. The most sensitive heterodyne detectors below 1 THz are the SIS- mixers due to its extremely high non-linearity and low noise level. Nevertheless, their effective range is strongly limited by superconducting gap Δ (about 1 THz for NbN circuits). Above 1 THz the detectors based on HEB (hot electron bolometers) are more effective [1]; their operation frequency is not limited from above and can be up to 70 THz [2]. HEBs can perform as both direct and heterodyne detectors (mixers). All HEB-mixers are used with external heterodyne, most useful are synthesizer with multipliers, quantum cascade lasers or far infrared lasers and backward-wave oscillators. Superconducting integrated receiver (SIR) is based on implementation of both SIS-miser and flux flow oscillator (FFO) acting as heterodyne at single chip [3]. Such receiver has been successfully applied at TELIS balloon-borne instrument for study of atmospheric constituents [4] and looks as very promising device for other THz missions including space research. Thus, there is a task to expand its operating range to higher frequencies. The frequency range of the SIR the operation is limited by both the SIS-mixer and the FFO maximum frequencies. The idea of present work is implementation of the HEB as a mixer in the SIR instead of the SIS traditionally used. We introduce the first results of integrating the HEB-mixer coupled to planar slot antenna with the FFO on one chip. For properly FFO operation the SIS harmonic mixer is used to phase lock the oscillator. The scheme of the SIR based on the HEB- mixer is presented in fig. 1. We have demonstrated the principal possibility of integration of both the HEB-mixer and the flux-flow oscillator on a single chip and succeed with sufficient power coupling for properly receiver operation. We measured the direct response of the HEB coupled to the antenna at THz frequencies by the FTS setup and noise temperature of the receiver with standard Y- factor measuring technique. The SIR operating range 450-620 GHz was achieved with the best uncorrected noise temperature of about 1000 К. One should note that it is still quite low frequencies for effective operation of the HEB-mixer; therefore we expect to obtain the better results for frequencies above 700 GHz (up to 1.2 THz). Another additional task is to increase the FFO frequencies by using NbTiN electrodes instead of NbN; currently we are working on this issue. This work was supported by the RFBR grant, the Ministry of Education and Science of Russia and Russian Academy of Sciences. References 1. D. Semenov, H.-W. Hubers, J. Schubert, G. N. Gol’tsman, A. I. Elantiev, B. M. Voronov, E. M. Gershenzon, Design and performance of the lattice-cooled hot-electron terahertz mixer, J. Appl. Phys. 88, 6758, 2000. 2. Maslennikov S. N., Finkel M. I., Antipov S. V. et al. Spiral antenna coupled and directly coupled NbN HEB mixers in the frequency range from 1 to 70THz. Proc. 17 th international symposium on space terahertz technology. Paris, France: 2006.—may. Pp. 177 – 179. 3. V.P. Koshelets, S.V. Shitov. Integrated Superconducting Receivers. Supercond. Sci. Technol. Vol. 13. P. R53-R59. 2000. 4. Gert de Lange, Dick Boersma, Johannes Dercksen et.al. Development and Characterization of the Superconducting Integrated Receiver Channel of the TELIS Atmospheric Sounder. Supercond. Sci. Technol. vol. 23, No 4, 045016 (8pp). 2010.

Abstract: Epitaxial laser deposited YBa2Cu3O7−δ films of ∼50 nm thickness were patterned into detectors consisting of ten parallel 1 μm wide strips in order to study nonequilibrium and bolometric effects. Typically, the patterned samples had critical temperatures around 86 K, transition widths around 2 K and critical current densities above 1×106A/cm2 at 77 K. Pulsed laser measurements at 0.8 μm wavelength (17 ps full width at half maximum) showed a ∼30 ps response, attributed to electron heating, followed by a slower bolometric decay. Amplitude modulation in the band fmod=100 kHz–10 GHz of a laser with wavelength λ=0.8 μm showed two different thermal relaxations in the photoresponse. Phonon escape from the film (∼3 ns) is the limiting process, followed by heat diffusion in the substrate. Similar relaxations were also seen for λ=10.6 μm. The photoresponse measurements were made with the film in the resistive state and extended into the normal state. These states were created by supercritical bias currents. Measurements between 75 and 95 K (i.e., from below to above Tc) showed that the photoresponse was proportional to dR/dT for fmod=1 MHz and 4 GHz. The fast response is limited by the electron‐phonon scattering time, estimated to 1.8 ps from experimental data. The responsivity both at 0.8 and 10.6 μm wavelength was ∼1.2 V/W at fmod=1 GHz and the noise equivalent power was calculated to 1.5×10−9 WHz−1/2 for the fast response.