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Author Title Year Publication Volume Pages
Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium 1971 JETP Lett. 14 241
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. Absorption spectra in electron transitions between excited states of impurities in germanium 1975 JETP Lett. 22 95-97
Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. Character of submillimeter photoconductivity in n-lnSb 1979 Sov. Phys. JETP 49 121-128
Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. Electron-phonon interaction in ultrathin Nb films 1990 Sov. Phys. JETP 70 505-511
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. Population and lifetime of excited states of shallow impurities in Ge 1979 Sov. Phys. JETP 49 355-362