|
Records |
Links |
|
Author |
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
|
|
Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
Type |
Journal Article |
|
Year |
1975 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
|
Volume |
22 |
Issue |
4 |
Pages |
95-97 |
|
|
Keywords |
Ge, impurities, excited states, absorption spectra |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1773 |
|
Permanent link to this record |
|
|
|
|
Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. |
|
|
Title |
Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum |
Type |
Journal Article |
|
Year |
1987 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
|
Volume |
46 |
Issue |
5 |
Pages |
237-238 |
|
|
Keywords |
YBCO HTS detectors |
|
|
Abstract |
For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1703 |
|
Permanent link to this record |
|
|
|
|
Author |
Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Sergeev, A. V. |
|
|
Title |
Light-induced heating of electrons and the time of the inelastic electron-phonon scattering in the YBaCuO compound |
Type |
Journal Article |
|
Year |
1987 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
|
Volume |
46 |
Issue |
6 |
Pages |
285-287 |
|
|
Keywords |
YBCO HTS HEB |
|
|
Abstract |
For the first time, measurements have been made on the electron energy relaxation time due to the electron--phonon interaction in films of the YBaCuO superconductor. The results indicate a significant intensification of the electron--phonon interaction in this compound as compared with normal superconducting metals. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1706 |
|
Permanent link to this record |
|
|
|
|
Author |
Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
|
|
Title |
Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures |
Type |
Journal Article |
|
Year |
1995 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
|
Volume |
61 |
Issue |
7 |
Pages |
591-595 |
|
|
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
|
|
Abstract |
The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1624 |
|
Permanent link to this record |
|
|
|
|
Author |
Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. |
|
|
Title |
Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon |
Type |
Journal Article |
|
Year |
2001 |
Publication |
Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
|
|
Volume |
73 |
Issue |
1 |
Pages |
44-47 |
|
|
Keywords |
uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field |
|
|
Abstract |
The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0021-3640 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1752 |
|
Permanent link to this record |