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Gousev, Y. P.; Semenov, A. D.; Gol'tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M. |
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Title |
Electron-phonon interaction in disordered NbN films |
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Journal Article |
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Year |
1994 |
Publication |
Phys. B Condens. Mat. |
Abbreviated Journal |
Phys. B Condens. Mat. |
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Volume |
194-196 |
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Pages |
1355-1356 |
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Keywords |
NbN films |
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Abstract  |
Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films. |
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0921-4526 |
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1649 |
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Semenov, A. D.; Sergeev, A. V.; Kouminov, P.; Goghidze, I. G.; Heusinger, M. A.; Nebosis, R. S.; Gol'tsman, G. N.; Gershenzon, E. M.; Renk, K. F. |
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Title |
Transparency of YBCO film/substrate interfaces for thermal phonons determined by photoresponse measurements |
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Conference Article |
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Year |
1993 |
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Proc. 1st European Conf. on Appl. Supercond. |
Abbreviated Journal |
Proc. 1st European Conf. on Appl. Supercond. |
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Volume |
2 |
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Pages |
1443-1446 |
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Keywords |
YBCO HTS detectors |
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Abstract |
Direct measurements of the thermal boundary resistance were performed by means of the stationary method. In this approach the temperature of an electrically heated film is controlled by its dc resistance while an additional film on the same substrate is used as a thermometer monitoring substrate temperature. The temperature field in the substrate is then calculated to deduce the Kapitza temperature step at the interface between the heated strip and the substrate. The main statement of all afore-said papers is that experimental values of the thermal boundary resistance are too large to be explained by the acoustic mismatch model. In this paper we investigate transparency of YBaCuO film/substrate interfaces for thermal phonons by means of photoresponse measurements. We show that our data are in reasonable agreement with the acoustic mismatch theory. |
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Freyhardt, H. C. |
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3-88355-197-X |
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1st European conference on applied superconductivity |
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1661 |
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Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N. |
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Title |
A fast infrared detector based on patterned YBCO thin film |
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Journal Article |
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Year |
1994 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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Volume |
7 |
Issue |
5 |
Pages |
321-323 |
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Keywords |
YBCO HTS detector |
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Abstract |
Detectors for infrared radiation ( lambda =0.85 mu m) were made of 50 nm thick YBa2Cu3O7- delta films on LaAlO3 and MgO or 60 nm thick films on NdGaO3. Parallel strips (1 mu m wide by 20 mu m long) were patterned in the films and formed the active device. These devices were designed to detect short infrared laser pulses by electron heating. The detectors were current biased into the resistive and the normal states. The response was studied in direct pulse measurements as well as by amplitude modulation of a laser. The pulse measurements showed a fast picosecond response followed by a slower decay related to phonon escape through the film-substrate interface and heat diffusion in the substrate. The frequency spectra up to 10 GHz showed two slopes with a knee corresponding to the phonon escape time. |
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0953-2048 |
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1646 |
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Author |
Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I. |
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Title |
Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity |
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Conference Article |
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Year |
1996 |
Publication |
Czech. J. Phys. |
Abbreviated Journal |
Czech. J. Phys. |
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Volume |
46 |
Issue |
S2 |
Pages |
857-858 |
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Keywords |
NbC films |
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Abstract |
Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory. |
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0011-4626 |
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1617 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Lugovaya, G. Ya.; Serebryakova, N. A.; Chinkova, E. V. |
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Title |
Infrared radiation detectors on the base of electron heating in resistive state films from traditional superconducing materials |
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Journal Article |
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1992 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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Volume |
5 |
Issue |
6 |
Pages |
1129-1140 |
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Keywords |
IR HEB detectors |
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Abstract |
Characteristics of infrared radiation detectors based on electron heating in thin superconducting films transformed at T ≤ Tc to a resistive state by transport current and, if necessary, by magnetic field are investigated. A comparison is made of the characteristics of the detectors fabricated of different materials: aluminium, niobium, Mo0.5Re0.5. Some devices with different topology of the reception area are considered. Electron heating detectors are comparable by their sensitivity with superconducting bolometers, but differ in a high fast-response. |
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Russian |
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0131-5366 |
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1673 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. |
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Title |
Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium |
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Journal Article |
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Year |
1986 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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64 |
Issue |
4 |
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889-897 |
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Ge, trapping of free carriers |
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Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3). |
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1707 |
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Author |
Shcherbatenko, M.; Lobanov, Y.; Kovalyuk, V.; Korneev, A.; Gol'tsman, G. N. |
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Title |
Photon counting detector as a mixer with picowatt local oscillator power requirement |
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Conference Article |
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2016 |
Publication |
Proc. 27th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 27th Int. Symp. Space Terahertz Technol. |
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110 |
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SSPD mixer, SNSPD |
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At the current stage of the heterodyne receiver technology, great attention is paid to the development of detector arrays and matrices comprising many detectors on a single wafer. However, any traditional THz detector (such as SIS, HEB, or Schottky diode) requires quite a noticeable amount of Local Oscillator (LO) power which scales with the matrix size, and the total amount of the LO power needed is much greater than that available from compact and handy solid state sources. Substantial reduction of the LO power requirement may be obtained with a photon-counting detector used as a mixer. This approach, mentioned earlier in [1,2] provides a number of advantages. Thus, sensitivity of such a detector would be at the quantum limit (because of the photon-counting nature of the detector) and just a few LO photons for the mixing would be required leading to a possible breakthrough in the matrix receiver development. In addition, the receiver could be easily tuned from the heterodyne to the direct detection mode without any loss in its sensitivity with the latter limited only by the quantum efficiency of the detector used. We demonstrate such a technique with the use of the Superconducting Nanowire Single Photon Detector(SNSPD)[3] irradiated by both 1.5 μm LO with a tiny amount of power (from a few picowatts down to femtowatts) facing the detector, and the test signal with a power significantly less than that of the LO. The SNSPD was operated in the current mode and the bias current was slightly below its critical value. Irradiating the detector with either the LO or the signal source produced voltage pulses which are statistically evenly distributed and could be easily counted by a lab counter or oscilloscope. Irradiating the detector by the both lasers simultaneously produced pulses at the frequency f m which is the exact difference between the frequencies at which the two lasers operate. f m could be deduced form either counts statistics integrated over a sufficient time interval or with the help of an RF spectrum analyzer. In addition to the chip SNSPD with normal incidence coupling, we use the detectors with a travelling wave geometry design [4]. In this case a niobium nitride nanowire is placed on the top of a nanophotonic waveguide, thus increasing the efficient interaction length. Integrated device scheme allows us to measure the optical losses with high accuracy. Our approach is fully scalable and, along with a large number of devices integrated on a single chip can be adapted to the mid and far IR ranges. This work was supported in part by the Ministry of Education and Science of the Russian Federation, contract no. 14.B25.31.0007 and by RFBR grant # 16-32-00465. 1. Leaf A. Jiang and Jane X. Luu, ―Heterodyne detection with a weak local oscillator, Applied Optics Vol. 47, Issue 10, pp. 1486-1503 (2008) 2. Matsuo H. ―Requirements on Photon Counting Detectors for Terahertz Interferometry J Low Temp Phys (2012) 167:840–845 3. A. Semenov, G. Gol'tsman, A. Korneev, “Quantum detection by current carrying superconducting film”, Physica C, 352, pp. 349-356 (2001) 4. O. Kahl, S. Ferrari, V. Kovalyuk, G. N. Goltsman, A. Korneev, and W. H. P. Pernice, ―Waveguide integrated superconducting single-photon detectors with high internal quantum efficiency at telecom wavelengths., Sci. Rep., vol. 5, p. 10941, (2015). |
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1203 |
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Gousev, Yu. P.; Gol'tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.; Nebosis, R. S.; Heusinger, M. A.; Renk, K. F. |
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Title |
Broadband ultrafast superconducting NbN detector for electromagnetic radiation |
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Journal Article |
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Year |
1994 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
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Volume |
75 |
Issue |
7 |
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3695-3697 |
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Keywords |
NbN HEB |
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An ultrafast detector that is sensitive to radiation in a broad spectral range from submillimeter waves to visible light is reported. It consists of a structured NbN thin film cooled to a temperature below Tc (∼11 K). Using 20 ps pulses of a GaAs laser, we observed signal pulses with both rise and decay time of about 50 ps. From the analysis of a mixing experiment with submillimeter radiation we estimate an intrinsic response time of the detector of ∼12 ps. The sensitivity was found to be similar for the near‐infrared and submillimeter radiation. Broadband sensitivity and short response time are attributed to a quasiparticle heating effect. |
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252 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Population and lifetime of excited states of shallow impurities in Ge |
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1979 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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49 |
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2 |
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355-362 |
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Ge, photothermal ionization, shallow impurities |
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An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed. |
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1719 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Karasik, B. S.; Potoskuev, S. E. |
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Intense electromagnetic radiation heating of superconductor electrons in resistive state |
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1988 |
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Fizika Nizkikh Temperatur |
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Fizika Nizkikh Temperatur |
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14 |
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7 |
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753-763 |
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Nb HEB |
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An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model. |
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