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Author Huebers, H.-W.; Semenov, A.; Schubert, J.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Krabbe, A.; Roeser, H.-P.
Title NbN hot-electron bolometer as THz mixer for SOFIA Type Conference Article
Year 2000 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 4014 Issue Pages 195-202
Keywords NbN HEB mixers, airborne, stratospheric observatory, SOFIA
Abstract (up) Heterodyne receivers for applications in astronomy need quantum limited sensitivity. We have investigated phonon- cooled NbN hot electron bolometric mixers in the frequency range from 0.7 THz to 5.2 THz. The devices were 3.5 nm thin films with an in-plane dimension of 1.7 X 0.2 micrometers 2 integrated in a complementary logarithmic spiral antenna. The best measured DSB receiver noise temperatures are 1300 K (0.7 THz), 2000 K (1.4 THz), 2100 K (1.6 THz), 2600 K (2.5 THz), 4000 K (3.1 THz), 5600 K (4.3 THz), and 8800 K (5.2 THz). The sensitivity fluctuation, the long term stability, and the antenna pattern were measured. The results demonstrate that this mixer is very well suited for GREAT, the German heterodyne receiver for SOFIA.
Address
Corporate Author Thesis
Publisher SPIE Place of Publication Editor Melugin, R.K.; Roeser, H.-P.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Airborne Telescope Systems
Notes Approved no
Call Number Serial 1554
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Author Hübers, Heinz-Wilhelm; Semenov, A.; Richter, H.; Smirnov, K.; Gol'tsman, G.; Voronov, B.
Title Phonon cooled far-infrared hot electron bolometer mixer Type Abstract
Year 2002 Publication NASA/ADS Abbreviated Journal NASA/ADS
Volume Issue Pages
Keywords NbN HEB mixers
Abstract (up) Heterodyne receivers for applications in astronomy need quantum-limited sensitivity. At frequencies above 1.4 THz superconducting hot electron bolometers (HEB) can be used to achieve this goal. We present results of the development of a quasi-optical phonon-cooled NbN HEB mixer for GREAT, the German heterodyne receiver for SOFIA. Different mixers with logarithmic spiral and double slot feed antennas have been investigated with respect to their noise temperature, conversion loss, linearity and beam pattern at several frequencies between 0.7 THz and 5.2 THz. At 2.5 THz a double sideband noise temperature of 2200 K was achieved. The conversion loss was 16 dB. The response of the mixer was linear up to 400 K load temperature. This performance was verified by measuring an emission line of methanol at 2.5 THz. The results demonstrate that the NbN HEB is very well suited as a mixer for FIR heterodyne receivers.
Address Monterey, CA
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Far-IR, Sub-mm & MM Detector Technology Workshop, 1-3 April 2002
Notes id.37 Approved no
Call Number Serial 1534
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Author Tretyakov, I.; Maslennikov, S.; Semenov, A.; Safir, O.; Finkel, M.; Ryabchun, S.; Kaurova, N.; Voronov, B.; Goltsman, G.; Klapwijk, T. M.
Title Impact of operating conditions on noise and gain bandwidth of NbN HEB mixers Type Conference Article
Year 2015 Publication Proc. 26th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 26th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 39
Keywords NbN HEB mixers
Abstract (up) Hot-electron bolometer mixers (HEB’s) are the most promising devices as mixing element for terahertz spectroscopy and astronomy at frequencies beyond 1.4 THz. They have a low noise temperature and low demands on local oscillator (LO) power. 1,2 An important limitation is the IF bandwidth, of the order of a few GHz, and which in principle depends on energy relaxation due to electron- phonon processes and on diffusion-cooling. It has been proposed by Prober that a reduction in length of the HEB would lead to an increased bandwidth. 3 This appeared to be achieved by Tretyakov et al by measuring the gain bandwidth close to the critical temperature of the NbN. 2 Unfortunately, the noise bandwidth of similar devices operated at temperatures around 4.2 K appear not depend on the length. The fundamental problem to be addressed is the position-dependent superconducting state of the HEB- devices under operating conditions, which determines the conditions for the cooling of the hot quasiparticles. Some progress has been made by Barends et al in a semi-empirical model to describe the I,V curves under operating conditions at a bath temperature around 4.2 K. 4 In more recent work Vercruyssen et al have analyzed the I,V curve, without any LO-equivalent bias, of a model NSN system. 5 This work suggests that the most appropriate model for an HEB under operating conditions is that of a potential-well in the superconducting gap in the center of the NbN, analogous the bimodal superconducting state described by Vercruyssen et al. Hot quasiparticles in the well can not diffuse out and can only cool by electron-phonon processes, those with higher energies than the heights of the walls of the well can diffuse out. Using this working hypothesis we have carried out experiments on a sub-micrometer NbN bridge connected to a gold (Au) planar spiral antenna. An in situ process is used to deposit Au on NbN. The Au is removed in the center to define the uncovered NbN, which will act as the superconducting mixer itself. The antenna is deposited on the remaining Au layer on the NbN. The Au contacts suppress the energy gap of the NbN film located underneath the gold layer 7,8 . The measured resistive transition is shown in Fig.1. It clearly shows a T c of the bilayer at 6.2 K and the resistive transition of the NbN itself around 9 K. In addition we show the measured noise bandwidth (red squares) for different bath temperatures. Clearly the noise bandwidth increases strongly by increasing the bath temperature from 5 K to 8 K, up to 13 GHz. We interpret this pattern as evidence for improved out-diffusion of hot electrons due to normal banks and a shallow superconducting potential well compared to k B T. As expected the noise temperature in this regime is much bigger than when biased at 4.2 K. R EFERENCES 1 W. Zhang, P. Khosropanah, J. R. Gao, E. L. Kollberg, K. S. Yngvesson, T. Bansal, R. Barends, and T. M. Klapwijk Appl. Phys. Lett. 96, 111113, (2010). 2 Ivan Tretyakov, Sergey Ryabchun, Matvey Finkel, Anna Maslennikova, Natalia Kaurova, Anastasia Lobastova, Boris Voronov, and Gregory Gol’tsman Appl. Phys. Lett. 98, 033507 (2011). 3 D. E. Prober, Appl. Phys. Lett. 62, 2119 (1992). 4 R. Barends, M. Hajenius, J. R. Gao, and T. M. Klapwijk, Appl. Phys. Lett. 87, 263506 (2005). 5 N. Vercruyssen, T. G. A. Verhagen, M. G. Flokstra, J. P. Pekola, and T. M. Klapwijk Physical Review B 85, 224503 (2012).
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1159
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Author Trifonov, V. A.; Karasik, B. S.; Zorin, M. A.; Gol'tsman, G. N.; Gershenzon, E. M.; Lindgren, M.; Danerud, M.; Winkler, D.
Title 9.6 μm wavelength mixing in a patterned YBa2Cu3O7-δ thin film Type Conference Article
Year 1996 Publication Proc. 7th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 7th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 337-348
Keywords YBCO HTS HEB mixers
Abstract (up) Hot-electron bolometric (HEB) mixing of 9.6 gm infrared radiation from two lasers in high-quality YBa2Cu307_3 (YBCO) patterned thin film has been demonstrated. A heterodyne measurement showed an intermediate frequency (IF) bandwidth of 18 GHz, limited by our measurement system. An intrinsic limit of 100 GHz is predicted. Between 0.1 and 1 GHz intermediate frequency, temperature fluctuations with an equivalent output noise temperature Tfl up to -150 K, contributed to the mixer noise while Johnson noise dominated above 1 GHz. The overall conversion loss at 77 K at low intermediate frequencies was measured to be -25 dB, of which 13 dB was due to the coupling loss. The IIEB mixer is very promising for use in heterodyne receivers within the whole infrared range.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1615
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Author Yagoubov, P.; Gol'tsman, G.; Voronov, B.; Svechnikov, S.; Cherednichenko, S.; Gershenzon, E.; Belitsky, V.; Ekström, H.; Semenov, A.; Gousev, Yu.; Renk, K.
Title Quasioptical phonon-cooled NbN hot-electron bolometer mixer at THz frequencies Type Conference Article
Year 1996 Publication Proc. 7th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 7th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 303-317
Keywords NbN HEB mixers
Abstract (up) In our experiments we tested phonon-cooled hot-electron bolometer (HEB) quasioptical mixer based on spiral antenna designed for 0.5-1.2 THz frequency band and fabricated on sapphire, Si-coated sapphire and high resistivity silicon substrates. HEB devices were produced from thin superconducting NbN film 3.5-6 nm thick with the critical temperature of about 11-12 K. For these devices we achieved the receiver noise temperature T R (DSB) = 3000 K in the 500-700 GHz frequency range and an IF bandwidth of 3-4 GHz. Prelimanary measurements at frequencies 1-1.2 THz resulted the receiver noise temperature about 9000 K (DSB).
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1614
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Author Korneeva, Yuliya; Florya, Irina; Vdovichev, Sergey; Moshkova, Mariya; Simonov, Nikita; Kaurova, Natalia; Korneev, Alexander; Goltsman, Gregory
Title Comparison of hot-spot formation in NbN and MoN thin superconducting films after photon absorption Type Conference Article
Year 2017 Publication IEEE Transactions on Applied Superconductivity Abbreviated Journal IEEE Transactions on Applied Superconductiv
Volume 27 Issue 4 Pages 5
Keywords Thin film devices, Superconducitng photoncounting devices, Nanowire single-photon detectors
Abstract (up) In superconducting single-photon detectors SSPD

the efficiency of local suppression of superconductivity and hotspot

formation is controlled by diffusivity and electron-phonon

interaction time. Here we selected a material, 3.6-nm-thick MoNx

film, which features diffusivity close to those of NbN traditionally

used for SSPD fabrication, but with electron-phonon interaction

time an order of magnitude larger. In MoNx detectors we study

the dependence of detection efficiency on bias current, photon

energy, and strip width and compare it with NbN SSPD. We

observe non-linear current-energy dependence in MoNx SSPD

and more pronounced plateaus in dependences of detection

efficiency on bias current which we attribute to longer electronphonon

interaction time.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ kovalyuk @ Serial 1114
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Author Shcheslavskiy, V.; Morozov, P.; Divochiy, A.; Vakhtomin, Y.; Smirnov, K.; Becker, W.
Title Erratum: “Ultrafast time measurements by time-correlated single photon counting coupled with superconducting single photon detector” [Rev. Sci. Instrum. 87, 053117 (2016)] Type Miscellaneous
Year 2016 Publication Rev. Sci. Instrum. Abbreviated Journal Rev. Sci. Instrum.
Volume 87 Issue 6 Pages 069901
Keywords SSPD, SNSPD, TCSPC, jitter
Abstract (up) In the original paper1the Ref. 10 should be M. Sanzaro, N. Calandri, A. Ruggeri, C. Scarcella, G. Boso, M. Buttafava, and A. Tosi, Proc. SPIE9370, 93701T (2015).
Address Becker & Hickl GmbH, Nahmitzer Damm 30, Berlin 12277, Germany
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0034-6748 ISBN Medium
Area Expedition Conference
Notes PMID:27370512 Approved no
Call Number Serial 1810
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Author Bakhvalova, T.; Belkin, M. E.; Kovalyuk, V. V.; Prokhodtcov, A. I.; Goltsman, G. N.; Sigov, A. S.
Title Studying key principles for design and fabrication of silicon photonic-based beamforming networks Type Conference Article
Year 2019 Publication PIERS-Spring Abbreviated Journal PIERS-Spring
Volume Issue Pages 745-751
Keywords silicon photonics, TriPleX platform
Abstract (up) In the paper, we address key principles for computer-aided design and fabrication of silicon-photonics-based optical beamforming network selecting the optimal approach by simulation and experimental results. To clarify the consideration, the study is conducted on the example of a widely used binary switchable silicon-nitride optical beamforming network based on TriPleX platform. Comparison of simulation results and experimental studies of the prototype shows that the relative error due to technological imperfections does not exceed 3%. According to the estimation, such an error introduces insignificant distortion in the radiation pattern of the referred antenna array.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number 9017646 Serial 1186
Permanent link to this record
 
 
Author Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A.
Title Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform Type Conference Article
Year 2019 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.
Volume 220 Issue Pages 03012
Keywords e-beam lithography, Si3N4
Abstract (up) In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2100-014X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1189
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Author Merkel, H. F.; Yagoubov, P. A.; Kroug, M.; Khosropanah, P.; Kollberg, E. L.; Gol’tsman, G. N.; Gershenzon, E. M.
Title Noise temperature and absorbed LO power measurement methods for NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies Type Conference Article
Year 1998 Publication Proc. 28th European Microwave Conf. Abbreviated Journal Proc. 28th European Microwave Conf.
Volume 1 Issue Pages 294-299
Keywords NbN HEB mixers
Abstract (up) In this paper the absorbed LO power requirements and the noise performance of NbN based phonon-cooled hot electron bolometric (HEB) quasioptical mixers are investigated for RF frequencies in the 0.55-1.1 range The minimal measured DSB noise temperatures are about 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The increase in noise temperature at 1.1THz is attributed to water absorption. The absorbed LO power is measured using a calorimetric approach. The results are subsequently corrected for lattice heating. These values are compared to results of a novel one dimensional hot spot mixer models and to a more traditional isotherm method which tends to underestimate the absorbed LO power for small bias powers. Typically a LO power between 50nW and 100nW is needed to pump the device to the optimal operating point.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference 28th European Microwave Conference
Notes Approved no
Call Number Serial 1580
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