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Author Aksaev, E. E.; Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V.
Title Prospects for using high-temperature superconductors to create electron bolometers Type Journal Article
Year 1989 Publication Pisma v Zhurnal Tekhnicheskoi Fiziki Abbreviated Journal Pisma v Zhurnal Tekhnicheskoi Fiziki
Volume 15 Issue 14 Pages 88-93
Keywords HTS HEB
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Language Russian Summary Language Original Title
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ISSN 0320-0116 ISBN Medium
Area Expedition Conference
Notes Перспективы применения высокотемпературных сверхпроводников для создания электронных болометров Approved no
Call Number Serial 1693
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Author Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
Title Kinetics of submillimeter impurity and exciton photoconduction in Ge Type Journal Article
Year 1982 Publication Optics and Spectroscopy Abbreviated Journal Optics and Spectroscopy
Volume 52 Issue 4 Pages 454-455
Keywords Ge, exciton photoconduction
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Notes Approved no
Call Number Serial 1715
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Author Blagosklonskaya, L. E.; Gershenzon, E. M.; Goltsman, G. N.; Elantev, A. I.
Title Effect of strong magnetic-field on spectrum of hydrogen-like admixtures in semiconductors Type Conference Article
Year 1978 Publication Izv. Akad. Nauk SSSR, Seriya Fizicheskaya Abbreviated Journal Izv. Akad. Nauk SSSR, Seriya Fizicheskaya
Volume 42 Issue 6 Pages 1231-1234
Keywords spectrum, semiconductors, admixtures, strong magnetic-field
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Publisher Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia Place of Publication Editor
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Notes Approved no
Call Number blagosklonskaya1978effect Serial 1724
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Author Gershenzon, E. M.; Goltsman, G. N.; Orlov, L.
Title Investigation of population and ionization of donor excited states in Ge Type Conference Article
Year 1976 Publication Physics of Semiconductors Abbreviated Journal Physics of Semiconductors
Volume Issue Pages 631-634
Keywords Ge, donor excited states
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Address Amsterdam
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Publisher North-Holland Publishing Co. Place of Publication Editor
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Notes Approved no
Call Number Serial 1732
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Author Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G.
Title Investigation of excited donor states in GaAs Type Journal Article
Year 1974 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.
Volume 7 Issue 10 Pages 1248-1250
Keywords GaAs, excited donor states
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Publisher Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa Place of Publication Editor
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Notes Approved no
Call Number Serial 1733
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