| Records |
| Author |
Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. |
| Title |
The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts |
Type |
Conference Article |
| Year |
2018 |
Publication |
Materials Today: Proc. |
Abbreviated Journal |
Materials Today: Proc. |
| Volume |
5 |
Issue |
13 |
Pages |
27301-27306 |
| Keywords |
graphene nanoribbons, graphene-nanoribbon, GNR FET, field effect transistor |
Abstract  |
We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface. |
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2214-7853 |
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1316 |
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| Author |
Rath, P.; Vetter, A.; Kovalyuk, V.; Ferrari, S.; Kahl, O.; Nebel, C.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. |
| Title |
Travelling-wave single-photon detectors integrated with diamond photonic circuits: operation at visible and telecom wavelengths with a timing jitter down to 23 ps |
Type |
Conference Article |
| Year |
2016 |
Publication |
Integrated Optics: Devices, Mat. Technol. XX |
Abbreviated Journal |
Integrated Optics: Devices, Mat. Technol. XX |
| Volume |
9750 |
Issue |
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Pages |
135-142 |
| Keywords |
SSPD, Superconducting Nanowire Single-Photon Detector, SNSPD, Single Photon Detector, Diamond Photonics, Diamond Integrated Optics, Diamond Waveguides, Integrated Optics, Low Timing Jitter |
| Abstract |
We report on the design, fabrication and measurement of travelling-wave superconducting nanowire single-photon detectors (SNSPDs) integrated with polycrystalline diamond photonic circuits. We analyze their performance both in the near-infrared wavelength regime around 1600 nm and at 765 nm. Near-IR detection is important for compatibility with the telecommunication infrastructure, while operation in the visible wavelength range is relevant for compatibility with the emission line of silicon vacancy centers in diamond which can be used as efficient single-photon sources. Our detectors feature high critical currents (up to 31 μA) and high performance in terms of efficiency (up to 74% at 765 nm), noise-equivalent power (down to 4.4×10-19 W/Hz1/2 at 765 nm) and timing jitter (down to 23 ps). |
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Spie |
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Editor |
Broquin, J.-E.; Conti, G.N. |
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1210 |
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Sclafani, M.; Marksteiner, M.; Keir, F. M. L.; Divochiy, A.; Korneev, A.; Semenov, A.; Gol'tsman, G.; Arndt, M. |
| Title |
Sensitivity of a superconducting nanowire detector for single ions at low energy |
Type |
Journal Article |
| Year |
2012 |
Publication |
Nanotechnol. |
Abbreviated Journal |
Nanotechnol. |
| Volume |
23 |
Issue |
6 |
Pages |
065501 (1 to 5) |
| Keywords |
NbN SSPD, SNSPD, superconducting single ion detector, SSID, SNSID |
| Abstract |
We report on the characterization of a superconducting nanowire detector for ions at low kinetic energies. We measure the absolute single-particle detection efficiency eta and trace its increase with energy up to eta = 100%. We discuss the influence of noble gas adsorbates on the cryogenic surface and analyze their relevance for the detection of slow massive particles. We apply a recent model for the hot-spot formation to the incidence of atomic ions at energies between 0.2 and 1 keV. We suggest how the differences observed for photons and atoms or molecules can be related to the surface condition of the detector and we propose that the restoration of proper surface conditions may open a new avenue for SSPD-based optical spectroscopy on molecules and nanoparticles. |
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Vienna Center for Quantum Science and Technology, Faculty of Physics, University of Vienna, Vienna, Austria |
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English |
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0957-4484 |
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PMID:22248823 |
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1380 |
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Tovpeko, N. A.; Trifonov, A. V.; Semenov, A. V.; Antipov, S. V.; Kaurova, N. S.; Titova, N. A.; Goltsman, G. N. |
| Title |
Bandwidth performance of a THz normal metal TiN bolometer-mixer |
Type |
Conference Article |
| Year |
2019 |
Publication |
Proc. 30th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 30th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
102-103 |
| Keywords |
TiN normal metal bolometer, NMB |
| Abstract |
We report on the bandwidth performance of the normal metal TiN bolometer-mixer on top of an Al 2 O 3 substrate, which is capable to operate in a wide range of bath temperatures from 77 K – 300 K. The choice of the combination TiN / Al 2 O 3 is related to an advanced heat transport between the film and the substrate in this pair and the sufficient temperature coefficient of resistance. The data were taken at 132.5 – 145.5 GHz with two BWOs as a signal and an LO source. Measurements were taken on TiN films of different thickness starting from 20 nm down to 5 nm coupled into a spiral Au antenna, which improves matching of incoming radiation with the thin TiN fim. Our experiments demonstrate effective heat coupling from a TiN thin film to an Al 2 O 3 substrate (111) boosting gain bandwidth (GB) of TiN bolometer up to 6 GHz for 5 nm thin film. Current results indicate weak temperature dependence of GB on the bath temperature of the TiN bolometer. Theoretical estimations of GB performance meet with experimental data for 5 nm thin TiN films. |
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1279 |
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Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E. |
| Title |
The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate |
Type |
Conference Article |
| Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
290-302 |
| Keywords |
NbN HEB mixers, fabrication process |
| Abstract |
We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K. |
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Charlottesville, Virginia, USA |
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266 |
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