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Author An, P.; Kovalyuk, V.; Golikov, A.; Zubkova, E.; Ferrari, S.; Korneev, A.; Pernice, W.; Goltsman, G. url  doi
openurl 
  Title Experimental optimisation of O-ring resonator Q-factor for on-chip spontaneous four wave mixing Type Conference Article
  Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1124 Issue Pages 051047  
  Keywords planar O-ring resonators, Q-factor  
  Abstract (up) In this paper we experimentally studied the influence of geometrical parameters of the planar O-ring resonators on its Q-factor and losses. We systematically changed the gap between the bus waveguide and the ring, as well as the width of the ring. We found the highest Q = 5×105 for gap 2.0 μm and the ring width 2 μm. This work is important for further on-chip SFWM applications since the generation rate of the biphoton field strongly depends on the quality factor as Q3  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1191  
Permanent link to this record
 

 
Author Goltsman, G. N. url  doi
openurl 
  Title Ultrafast nanowire superconducting single-photon detector with photon number resolving capability Type Conference Article
  Year 2009 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 7236 Issue Pages 72360D (1 to 11)  
  Keywords PNR NbN SSPD, SNSPD, superconducting single-photon detectors, photon number resolving detectors, ultrathin NbN films  
  Abstract (up) In this paper we present a review of the state-of-the-art superconducting single-photon detector (SSPD), its characterization and applications. We also present here the next step in the development of SSPD, i.e. photon-number resolving SSPD which simultaneously features GHz counting rate. We have demonstrated resolution up to 4 photons with quantum efficiency of 2.5% and 300 ps response pulse duration providing very short dead time.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Arakawa, Y.; Sasaki, M.; Sotobayashi, H.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1403  
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Author Tarkhov, M.; Morozov, D.; Mauskopf, P.; Seleznev, V.; Korneev, A.; Kaurova, N.; Rubtsova, I.; Minaeva, O.; Voronov, B.; Goltsman, G. url  openurl
  Title Single photon counting detector for THz radioastronomy Type Conference Article
  Year 2006 Publication Proc. 17th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 17th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 119-122  
  Keywords NbN SSPD, SNSPD  
  Abstract (up) In this paper we present the results of the research on the superconducting NbN-ultrathin-film single- photon detectors (SSPD) which are capable to detect single quanta in middle IR range. The detection mechanism is based on the hotspot formation in quasi-two-dimensional superconducting structures upon photon absorption. Spectral measurements showed that up to 5.7 gm wavelength (52 THz) the SSPD exhibits single-photon sensitivity. Reduction of operation temperature to 1.6 K allowed us to measure quantum efficiency of -4% at 60 THz. Although further decrease of the operation temperature far below 1 K does not lead to any significant increase of quantum efficiency. We expect that the improvement of the SSPD's performance at reduced operation temperature will make SSPD a practical detector with high characteristics for much lower THz frequencies as well.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1438  
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Author Ryabchun, S.; Korneev, A.; Matvienko, V.; Smirnov, K.; Kouminov, P.; Seleznev, V.; Kaurova, N.; Voronov, B.; Gol’tsman, G. N. url  openurl
  Title Superconducting single photon detectors array based on hot electron phenomena Type Conference Article
  Year 2004 Publication Proc. 15th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 15th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 242-247  
  Keywords NbN SSPD arrays, SNSPD  
  Abstract (up) In this paper we propose to use time domain multiplexing for large format arrays of superconducting single photon detectors (SSPDs) of the terahertz, visible and infrared frequency ranges based on ultrathin superconducting NbN films. Effective realization of time domain multiplexing for SSPD arrays is possible due to a short electric pulse of the SSPD as response to radiation quantum absorption, picosecond jitter and extremely low noise equivalent power (NEP). We present experimental results of testing 2×2 arrays in the infrared waveband. The measured noise equivalent power in the infrared and expected for the terahertz waveband is 10 – 21 WHz -1/2 . The best quantum efficiency (QE) of SSPD is 50% at 1.3 µm wavelength.  
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  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1493  
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Author Shurakov, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Zilberley, T.; Prikhodko, A.; Voronov, B.; Vasil’evskii, I.; Goltsman, G. url  doi
openurl 
  Title Planar Schottky diode with a Γ-shaped anode suspended bridge Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue Pages 012154  
  Keywords Schottky diode, GaAs, InP substrate  
  Abstract (up) In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1152  
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Author Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G. url  doi
openurl 
  Title Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue Pages 012156  
  Keywords Shottky diode, THz, direct detector, multipixel camera  
  Abstract (up) In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1153  
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Author Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Wilsher, K.; Lo, W.; Okunev, O.; Korneev, A.; Kouminov, P.; Chulkova, G.; Gol’tsman, G. N. url  doi
openurl 
  Title A superconducting single-photon detector for CMOS IC probing Type Conference Article
  Year 2003 Publication Proc. 16-th LEOS Abbreviated Journal Proc. 16-th LEOS  
  Volume 2 Issue Pages 602-603  
  Keywords NbN SSPD, SNSPD  
  Abstract (up) In this paper, a novel, time-resolved, NbN-based, superconducting single-photon detector (SSPD) has been developed for probing CMOS integrated circuits (ICs) using photon emission timing analysis (PETA).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  Area Expedition Conference The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003.  
  Notes Approved no  
  Call Number Serial 1510  
Permanent link to this record
 

 
Author Cao, Aiqin; Jiang, L.; Chen, S.H.; Antipov, S.V.; Shi, S.C. doi  openurl
  Title IF gain bandwidth of a quasi-optical NbN superconducting HEB mixer Type Conference Article
  Year 2007 Publication Proc. International conference on microwave and millimeter wave technology Abbreviated Journal Proc. ICMMT  
  Volume Issue Pages 1-3  
  Keywords HEB, mixer, gain bandwidth  
  Abstract (up) In this paper, the intermediate frequency (IF) gain bandwidth of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer is investigated at 500 GHz with an IF system incorporating with a frequency down-converting scheme which is able to sweep the IF signal in a frequency range of 0.3-4 GHz. The IF gain bandwidth of the device is measured to be 1.5 GHz when it is biased at a voltage of the minimum noise temperature, and becomes larger when the bias voltage increases.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
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  Notes Approved no  
  Call Number RPLAB @ lobanovyury @ Serial 575  
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Author Yazoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Gol'tsman, G.; Lipatov, A.; Svechnikov, S.; Gershenzon, E. url  openurl
  Title Quasioptical NbN phonon-cooled hot electron bolometric mixers with low optimal local oscillator power Type Conference Article
  Year 1998 Publication Proc. 9th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 9th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 131-140  
  Keywords NbN HEB mixers  
  Abstract (up) In this paper, the noise perform.ance of NIN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixers is investigated in the 0.55-1.1 THz frequency range. The best results of the DSB noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The water vapor in the signal path causes a significant contribution to the measured noise temperature around 1.1 THz. The required LO power is typically about 60 nW. The frequency response of the spiral antenna+lens system is measured using a Fourier Transform Spectrometer with the HEB operating in a detector mode.  
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  Series Editor Series Title Abbreviated Series Title  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1589  
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Author Komrakova, S.; Kovalyuk, V.; An, P.; Golikov, A.; Rybin, M.; Obraztsova, E.; Goltsman, G. url  doi
openurl 
  Title Effective absorption coefficient of a graphene atop of silicon nitride nanophotonic circuit Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue Pages 012135  
  Keywords silicon nitride O-ring resonator, ORR  
  Abstract (up) In this paper, we demonstrate the results of a study of the optical absorption properties of graphene integrated with silicon nitride O-ring resonator. We fabricated an array of O-ring resonators with different graphene coverage area atop. By measuring the transmission spectra of nanophotonic devices with and without graphene, we calculated the effective absorption coefficient of the graphene on a rib silicon nitride waveguide.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1177  
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