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Cao, A., Jiang, L., Chen, S. H., Antipov, S. V., & Shi, S. C. (2007). IF gain bandwidth of a quasi-optical NbN superconducting HEB mixer. In Proc. International conference on microwave and millimeter wave technology (pp. 1–3). Builin.
Abstract: In this paper, the intermediate frequency (IF) gain bandwidth of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer is investigated at 500 GHz with an IF system incorporating with a frequency down-converting scheme which is able to sweep the IF signal in a frequency range of 0.3-4 GHz. The IF gain bandwidth of the device is measured to be 1.5 GHz when it is biased at a voltage of the minimum noise temperature, and becomes larger when the bias voltage increases.
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Yazoubov, P., Kroug, M., Merkel, H., Kollberg, E., Gol'tsman, G., Lipatov, A., et al. (1998). Quasioptical NbN phonon-cooled hot electron bolometric mixers with low optimal local oscillator power. In Proc. 9th Int. Symp. Space Terahertz Technol. (pp. 131–140).
Abstract: In this paper, the noise perform.ance of NIN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixers is investigated in the 0.55-1.1 THz frequency range. The best results of the DSB noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The water vapor in the signal path causes a significant contribution to the measured noise temperature around 1.1 THz. The required LO power is typically about 60 nW. The frequency response of the spiral antenna+lens system is measured using a Fourier Transform Spectrometer with the HEB operating in a detector mode.
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Jiang, L., Miao, W., Zhang, W., Li, N., Lin, Z. H., Yao, Q. J., et al. (2006). Characterization of a quasi-optical NbN superconducting HEB mixer. IEEE Trans. Microwave Theory Techn., 54(7), 2944–2948.
Abstract: In this paper, the performance of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer, cryogenically cooled by a close-cycled 4-K refrigerator, is thoroughly investigated at 300, 500, and 850 GHz. The lowest receiver noise temperatures measured at the respective three frequencies are 1400, 900, and 1350 K, which can go down to 659, 413, and 529 K, respectively, after correcting the loss and associated noise contribution of the quasi-optical system before the measured superconducting HEB mixer. The stability of the quasi-optical superconducting HEB mixer is also investigated here. The Allan variance time measured with a local oscillator pumping at 500 GHz and an IF bandwidth of 110 MHz is 1.5 s at the dc-bias voltage exhibiting the lowest noise temperature and increases to 2.5 s at a dc bias twice that voltage.
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Meledin, D. V., Marrone, D. P., Tong, C. - Y. E., Gibson, H., Blundell, R., Paine, S. N., et al. (2004). A 1-THz superconducting hot-electron-bolometer receiver for astronomical observations. IEEE Trans. Microwave Theory Techn., 52(10), 2338–2343.
Abstract: In this paper, we describe a superconducting hot-electron-bolometer mixer receiver developed to operate in atmospheric windows between 800-1300 GHz. The receiver uses a waveguide mixer element made of 3-4-nm-thick NbN film deposited over crystalline quartz. This mixer yields double-sideband receiver noise temperatures of 1000 K at around 1.0 THz, and 1600 K at 1.26 THz, at an IF of 3.0 GHz. The receiver was successfully tested in the laboratory using a gas cell as a spectral line test source. It is now in use on the Smithsonian Astrophysical Observatory terahertz test telescope in northern Chile.
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Kawamura, J., Blundell, R., Tong, C. - Y. E., Papa, D. C., Hunter, T. R., Paine, S. N., et al. (2000). Superconductive hot-electron-bolometer mixer receiver for 800-GHz operation. IEEE Trans. Microw. Theory Techn., 48(4), 683–689.
Abstract: In this paper, we describe a superconductive hot-electron-bolometer mixer receiver designed to operate in the partially transmissive 350-μm atmospheric window. The receiver employs an NbN thin-film microbridge as the mixer element, in which the main cooling mechanism of the hot electrons is through electron-phonon interaction. At a local-oscillator frequency of 808 GHz, the measured double-sideband receiver noise temperature is TRX=970 K, across a 1-GHz intermediate-frequency bandwidth centered at 1.8 GHz. We have measured the linearity of the receiver and the amount of local-oscillator power incident on the mixer for optimal operation, which is PLO≈1 μW. This receiver was used in making observations as a facility instrument at the Heinrich Hertz Telescope, Mt. Graham, AZ, during the 1998-1999 winter observing season.
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Krause, S., Mityashkin, V., Antipov, S., Gol’tsman, G., Meledin, D., Desmaris, V., et al. (2017). Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers. IEEE Trans. Terahertz Sci. Technol., 7(1), 53–59.
Abstract: In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented experimental setup and operation of the HEB close to the critical temperature of the NbN film allowed for the extraction of phonon escape time in a simplified manner. Two independent experiments were performed at GARD/Chalmers and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. By fitting the normalized IF measurement data to the heat balance equations, the escape time as a fitting parameter has been deduced and amounts to 45 ps for the HEB based on Si substrate as in contrast to a significantly reduced escape time of 18 ps for the HEB utilizing the GaN buffer layer under the assumption that no additional electron diffusion has taken place. This study indicates a high phonon transmissivity of the NbN-to-GaN interface and a prospective increase of IF bandwidth for HEB made of NbN on GaN buffer layers, which is desirable for future THz HEB heterodyne receivers.
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Krause, S., Mityashkin, V., Antipov, S., Gol'tsman, G., Meledin, D., Desmaris, V., et al. (2016). Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method. In Proc. 27th Int. Symp. Space Terahertz Technol. (pp. 30–32).
Abstract: In this paper, we present a reliable measurement method to study the influence of the GaN buffer layer on phonon-escape time in comparison with commonly used Si substrates and, in consequence, on the IF bandwidth of HEBs. One of the key aspects is to operate the HEB mixer at elevated bath temperatures close to the critical temperature of the NbN ultra-thin film, where contributions from electron-phonon processes and self-heating effects are relatively small, therefore IF roll-off will be governed by the phonon-escape.Two independent experiments were performed at GARD and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. The entire IF chain was characterized by S-parameter measurements. We compared the measurement results of epitaxial NbN grown onto GaN buffer-layer with Tc of 12.5 K (4.5nm) with high quality polycrystalline NbN films on Si substrate with Tc of 10.5K (5nm) and observed a strong indication of an enhancement of phonon escape to the substrate by a factor of two for the NbN/GaN material combination.
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Antipov, S., Trifonov, A., Krause, S., Meledin, D., Desmaris, V., Belitsky, V., et al. (2017). Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency. In Proc. 28th Int. Symp. Space Terahertz Technol. (pp. 147–148).
Abstract: In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth.
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Meledin, D., Tong, C. Y. - E., Blundell, R., Kaurova, N., Smirnov, K., Voronov, B., et al. (2003). Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer. IEEE Trans. Appl. Supercond., 13(2), 164–167.
Abstract: In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions.
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Shurakov, A., Tong, C. -yu E., Grimes, P., Blundell, R., & Golt'sman, G. (2015). A microwave reflection readout scheme for hot electron bolometric direct detector. IEEE Trans. THz Sci. Technol., 5, 81–84.
Abstract: In this paper, we propose and present data from a fast THz detector based on the repurpose of hot electron bolometer mixers (HEB) fabricated from superconducting NbN thinfilm. This detector is essentially a traditional NbN bolometer element that operates under the influence of a microwave pump. The in-jected microwave power serves the dual purpose of enhancing the detector sensitivity and reading out the impedance changes of the device in response to incidentTHz radiation. We have measured an optical Noise Equivalent Power of 4 pW/ Hz for our detector at a bath temperature of 4.2 K. The measurement frequency was 0.83 THz and the modulation frequency was 1.48 kHz. The readout
scheme is versatile and facilitates both high-speed operation as well as multi-pixel applications.
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