| Records |
| Author |
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
| Title |
Investigation of population and ionization of donor excited states in Ge |
Type |
Conference Article |
| Year |
1976 |
Publication |
Physics of Semiconductors |
Abbreviated Journal |
Physics of Semiconductors |
| Volume |
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Issue |
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Pages |
631-634 |
| Keywords |
Ge, donor excited states |
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| Address |
Amsterdam |
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| Publisher |
North-Holland Publishing Co. |
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| Call Number |
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Serial |
1732 |
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| Author |
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
| Title |
Investigation of excited donor states in GaAs |
Type |
Journal Article |
| Year |
1974 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
| Volume |
7 |
Issue |
10 |
Pages |
1248-1250 |
| Keywords |
GaAs, excited donor states |
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| Publisher |
Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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no |
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Serial |
1733 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
| Title |
Energy spectrum of free excitons in germanium |
Type |
Journal Article |
| Year |
1973 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
18 |
Issue |
3 |
Pages |
93 |
| Keywords |
Ge, free excitons, energy spectrum |
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no |
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1734 |
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| Author |
Goltsman, G. |
| Title |
Simple method for stabilizing power of submillimetric spectrometer |
Type |
Journal Article |
| Year |
1972 |
Publication |
Pribory i Tekhnika Eksperimenta |
Abbreviated Journal |
Pribory i Tekhnika Eksperimenta |
| Volume |
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Issue |
1 |
Pages |
136 |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., Moscow, 113095, Russia |
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no |
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Serial |
1738 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
| Title |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
Type |
Journal Article |
| Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
14 |
Issue |
5 |
Pages |
185-186 |
| Keywords |
Ge, Si, neutral impurity atom, binding energy |
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1739 |
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