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| Author | Tretyakov, I. V.; Finkel, M. I.; Ryabchun, S. A.; Kardakova, A. I.; Seliverstov, S. V.; Petrenko, D. V.; Goltsman, G. N. | ||||
| Title | Hot-electron bolometer mixers with in situ contacts | Type | Journal Article | ||
| Year | 2014 | Publication | Radiophys. Quant. Electron. | Abbreviated Journal | Radiophys. Quant. Electron. |
| Volume | 56 | Issue | 8-9 | Pages | 591-598 |
| Keywords | HEB mixers | ||||
Abstract  |
We report on the latest achievements in the development of superconducting hot-electron bolometer (HEB) mixers for terahertz superheterodyne receivers. We consider application ranges of such receivers and requirements for the basic characteristics of the mixers. Main features of the mixers, such as noise temperature, gain bandwidth, noise bandwidth, and required local-oscillator power, have been improved significantly over the past few years due to intense research work, both in terms of the element fabrication quality and in terms of understanding of the physics of the processes occurring in the HEB mixers. Contacts between the superconducting bridge and the planar antenna play a key role in the mixer operation. Improvement of the quality of the contacts leads simultaneously to a decrease in the noise temperature and an increase in the gain bandwidth of a mixer. | ||||
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| ISSN | 0033-8443 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1170 | |||
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| Author | Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A. | ||||
| Title | Electron energy relaxation in disordered superconducting NbN films | Type | Journal Article | ||
| Year | 2020 | Publication | Phys. Rev. B | Abbreviated Journal | Phys. Rev. B |
| Volume | 102 | Issue | 5 | Pages | 054501 (1 to 15) |
| Keywords | NbN SSPD, SNSPD, HEB, bandwidth, relaxation time | ||||
| Abstract |
We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe−ph∼Tn with the exponents n≈3.2–3.8. We found that in this temperature range τe−ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2469-9950 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1266 | |||
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| Author | Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. | ||||
| Title | The electron-phonon relaxation time in thin superconducting titanium nitride films | Type | Journal Article | ||
| Year | 2013 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 103 | Issue | 25 | Pages | 252602 (1 to 4) |
| Keywords | disordered TiN films, electron-phonon relaxation time | ||||
| Abstract |
We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors. The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159. |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 941 | ||
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| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of a silicon membrane-based multipixel hot electron bolometer receiver | Type | Journal Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages | 1-5 |
| Keywords | Multi-pixel, NbN HEB, silicon-on-insulator, horn array | ||||
| Abstract |
We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1324 | |||
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| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages | 6 |
| Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
| Abstract |
We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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| Author | Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. | ||||
| Title | Optimization of contra-directional coupler based on silicon nitride Bragg rib waveguide | Type | Conference Article | ||
| Year | 2018 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1124 | Issue | Pages | 051048 | |
| Keywords | Bragg waveguide, Si3N4 | ||||
| Abstract |
We report on the development and fabrication of a contra-directional coupler based on the Bragg waveguide on Si3N4 platform. Transmitted and reflected by the contra-directional coupler spectra were measured. The reflected spectra exactly matches the one notched by the main channel of the coupler. Losses are about 3dB, coupling to the directing branch of the coupler is practically lossless. FWHM of the transmitted (reflected) spectra is 3.46 nm. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1195 | |||
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| Author | Zubkova, E.; Golikov, A.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. | ||||
| Title | CWDM demultiplexer using anti-reflection, contra-directional couplers based on silicon nitride rib waveguide | Type | Conference Article | ||
| Year | 2019 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1410 | Issue | Pages | 012179 | |
| Keywords | coarse wavelength-division multiplexing, Si3N4 rib waveguide | ||||
| Abstract |
We report on the development and fabrication of a 9-channel coarse wavelength-division multiplexing for telecommunication wavelengths (1550 nm) using anti-reflection contra-directional couplers, based on silicon nitride (Si3N4) rib waveguide. The transmitted and reflected spectrum in each channel of the demultiplexer were measured. The average full width at half maximum of the transmitted (reflected) spectra is about 3 nm. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1183 | |||
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| Author | Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. | ||||
| Title | The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts | Type | Conference Article | ||
| Year | 2018 | Publication | Materials Today: Proc. | Abbreviated Journal | Materials Today: Proc. |
| Volume | 5 | Issue | 13 | Pages | 27301-27306 |
| Keywords | graphene nanoribbons, graphene-nanoribbon, GNR FET, field effect transistor | ||||
| Abstract |
We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2214-7853 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1316 | |||
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| Author | Rath, P.; Vetter, A.; Kovalyuk, V.; Ferrari, S.; Kahl, O.; Nebel, C.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. | ||||
| Title | Travelling-wave single-photon detectors integrated with diamond photonic circuits: operation at visible and telecom wavelengths with a timing jitter down to 23 ps | Type | Conference Article | ||
| Year | 2016 | Publication | Integrated Optics: Devices, Mat. Technol. XX | Abbreviated Journal | Integrated Optics: Devices, Mat. Technol. XX |
| Volume | 9750 | Issue | Pages | 135-142 | |
| Keywords | SSPD, Superconducting Nanowire Single-Photon Detector, SNSPD, Single Photon Detector, Diamond Photonics, Diamond Integrated Optics, Diamond Waveguides, Integrated Optics, Low Timing Jitter | ||||
| Abstract |
We report on the design, fabrication and measurement of travelling-wave superconducting nanowire single-photon detectors (SNSPDs) integrated with polycrystalline diamond photonic circuits. We analyze their performance both in the near-infrared wavelength regime around 1600 nm and at 765 nm. Near-IR detection is important for compatibility with the telecommunication infrastructure, while operation in the visible wavelength range is relevant for compatibility with the emission line of silicon vacancy centers in diamond which can be used as efficient single-photon sources. Our detectors feature high critical currents (up to 31 μA) and high performance in terms of efficiency (up to 74% at 765 nm), noise-equivalent power (down to 4.4×10-19 W/Hz1/2 at 765 nm) and timing jitter (down to 23 ps). | ||||
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| Publisher | Spie | Place of Publication | Editor | Broquin, J.-E.; Conti, G.N. | |
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| Notes | Approved | no | |||
| Call Number | Serial | 1210 | |||
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| Author | Tovpeko, N. A.; Trifonov, A. V.; Semenov, A. V.; Antipov, S. V.; Kaurova, N. S.; Titova, N. A.; Goltsman, G. N. | ||||
| Title | Bandwidth performance of a THz normal metal TiN bolometer-mixer | Type | Conference Article | ||
| Year | 2019 | Publication | Proc. 30th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 30th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 102-103 | ||
| Keywords | TiN normal metal bolometer, NMB | ||||
| Abstract |
We report on the bandwidth performance of the normal metal TiN bolometer-mixer on top of an Al 2 O 3 substrate, which is capable to operate in a wide range of bath temperatures from 77 K – 300 K. The choice of the combination TiN / Al 2 O 3 is related to an advanced heat transport between the film and the substrate in this pair and the sufficient temperature coefficient of resistance. The data were taken at 132.5 – 145.5 GHz with two BWOs as a signal and an LO source. Measurements were taken on TiN films of different thickness starting from 20 nm down to 5 nm coupled into a spiral Au antenna, which improves matching of incoming radiation with the thin TiN fim. Our experiments demonstrate effective heat coupling from a TiN thin film to an Al 2 O 3 substrate (111) boosting gain bandwidth (GB) of TiN bolometer up to 6 GHz for 5 nm thin film. Current results indicate weak temperature dependence of GB on the bath temperature of the TiN bolometer. Theoretical estimations of GB performance meet with experimental data for 5 nm thin TiN films. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1279 | |||
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| Author | Bryerton, E.; Percy, R.; Bass, R.; Schultz, J.; Oluleye, O.; Lichtenberger, A.; Ediss, G. A.; Pan, S. K.; Goltsman, G. N. | ||||
| Title | Receiver measurements of pHEB beam lead mixers on 3-μm silicon | Type | Conference Article | ||
| Year | 2005 | Publication | Proc. 30th IRMMW / 13th THz | Abbreviated Journal | Proc. 30th IRMMW / 13th THz |
| Volume | Issue | Pages | 271-272 | ||
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| Abstract |
We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 μm thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz. | ||||
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| Area | Expedition | Conference | Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1460 | |||
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| Author | Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. | ||||
| Title | Graphene-layer and graphene-nanoribbon FETs as THz detectors | Type | Conference Article | ||
| Year | 2018 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1124 | Issue | Pages | 051054 | |
| Keywords | field-effect transistor, FET, monolayer graphene, graphene nanoribbons | ||||
| Abstract |
We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1300 | |||
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| Author | Zhang, W.; Miao, W.; Yao, Q. J.; Lin, Z. H.; Shi, S. C.; Gao, J. R.; Goltsman, G. N. | ||||
| Title | Spectral response and noise temperature of a 2.5 THz spiral antenna coupled NbN HEB mixer | Type | Journal Article | ||
| Year | 2012 | Publication | Phys. Procedia | Abbreviated Journal | Phys. Procedia |
| Volume | 36 | Issue | Pages | 334-337 | |
| Keywords | NbN HEB mixer | ||||
| Abstract |
We report on a 2.5 THz spiral antenna coupled NbN hot electron bolometer (HEB) mixers, fabricated with in-situ process. The receiver noise temperature with lowest value of 1180 K is in good agreement with calculated quantum efficiency factor as a function of bias voltage. In addition, the measured spectral response of the spiral antenna coupled NbN HEB mixer shows broad frequency coverage of 0.8-3 THz, and corrected response for optical losses, FTS, and coupling efficiency between antenna and bolometer falls with frequency due to diffraction-limited beam of lens/antenna combination. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1875-3892 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1381 | |||
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| Author | Baubert, J.; Salez, M.; Delorme, Y.; Pons, P.; Goltsman, G.; Merkel, H.; Leconte, B. | ||||
| Title | Membrane-based HEB mixer for THz applications | Type | Conference Article | ||
| Year | 2003 | Publication | Proc. SPIE | Abbreviated Journal | Proc. SPIE |
| Volume | 5116 | Issue | Pages | 551-562 | |
| Keywords | membrane NbN HEB mixers, heterodyne receiver, stress-less membrane, coupling efficiency, submillimeter-waves frequency, low-cost space applications | ||||
| Abstract |
We report in this paper a new concept for 2.7 THz superconducting Niobium nitride (NbN) Hot-Electron Bolometer mixer (HEB). The membrane process was developped for space telecommnunication applications a few years ago and the HEB mixer concept is now considered as the best choice for low-noise submillimeter-wave frequency heterodyne receivers. The idea is then to join these two technologies. The novel fabrication scheme is to fabricate a NbN HEB mixer on a 1 μm thick stress-less Si3N4/SiO2 membrane. This seems to present numerous improvements concerning : use at higher RF frequencies, power coupling efficiency, HEB mixer sensitivity, noise temperature, and space applications. This work is to be continued within the framework of an ESA TRP project, a 2.7 THz heterodyne camera with numerous applications including a SOFIA airborne receiver. This paper presents the whole fabrication process, the validation tests and preliminary results. Membrane-based HEB mixer theory is currently being investigated and further tests such as heterodyne and Fourier transform spectrometry measurement are planed shortly. | ||||
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| Publisher | SPIE | Place of Publication | Editor | Chiao, J.-C.; Varadan, V.K.; Cané, C. | |
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| Area | Expedition | Conference | Smart Sensors, Actuators, and MEMS | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1520 | |||
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| Author | Matyushkin, Y.; Kaurova, N.; Voronov, B.; Goltsman, G.; Fedorov, G. | ||||
| Title | On chip carbon nanotube tunneling spectroscopy | Type | Journal Article | ||
| Year | 2020 | Publication | Fullerenes, Nanotubes and Carbon Nanostructures | Abbreviated Journal | |
| Volume | 28 | Issue | 1 | Pages | 50-53 |
| Keywords | carbon nanotubes, CNT, scanning tunneling microscope, STM | ||||
| Abstract |
We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method – tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes. | ||||
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| Publisher | Taylor & Francis | Place of Publication | Editor | ||
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| Notes | Approved | no | |||
| Call Number | doi:10.1080/1536383X.2019.1671365 | Serial | 1269 | ||
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