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Author Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. url  doi
openurl 
  Title Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation Type Journal Article
  Year 2021 Publication Adv. Electron. Mater. Abbreviated Journal Adv. Electron. Mater.  
  Volume 7 Issue 3 Pages 2000872  
  Keywords SWCNT transistors  
  Abstract (up) The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2199-160X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1843  
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Author Akhmadishina, K. F.; Bobrinetskiy, I. I.; Komarov, I. A.; Malovichko, A. M.; Nevolin, V. K.; Fedorov, G. E.; Golovin, A. V.; Zalevskiy, A. O.; Aidarkhanov, R. D. url  doi
openurl 
  Title Fast-response biological sensors based on single-layer carbon nanotubes modified with specific aptamers Type Journal Article
  Year 2015 Publication Semicond. Abbreviated Journal Semicond.  
  Volume 49 Issue 13 Pages 1749-1753  
  Keywords carbon nanotubes, CNT detectors  
  Abstract (up) The possibility of the fabrication of a fast-response biological sensor based on a composite of single-layer carbon nanotubes and aptamers for the specific detection of proteins is shown. The effect of modification of the surface of the carbon nanotubes on the selectivity and sensitivity of the sensors is investigated. It is shown that carboxylated nanotubes have a better selectivity for detecting thrombin.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1063-7826 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1783  
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Author Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. url  doi
openurl 
  Title Tunnel field-effect transistors for sensitive terahertz detection Type Journal Article
  Year 2021 Publication Nat. Commun. Abbreviated Journal Nat. Commun.  
  Volume 12 Issue 1 Pages 543  
  Keywords field-effect transistors, bilayer graphene, BLG  
  Abstract (up) The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.  
  Address Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2041-1723 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:33483488; PMCID:PMC7822863 Approved no  
  Call Number Serial 1261  
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Author Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Voronov, B. M.; Finkel, M.; Klapwijk, T. M.; Goltsman, G. url  openurl
  Title Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-THz radiation Type Abstract
  Year 2014 Publication Proc. 25th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 25th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages 71  
  Keywords carbon nanotubes, CNT  
  Abstract (up) This work reports on the voltage response of asymmetric carbon nanotube devices to sub-THz radiation at the frequency of 140 GHz. The devices contain CNT’s, which are over their length partially suspended and partially Van der Waals bonded to a SiO 2 substrate, causing a difference in thermal contact. Different heat sinking of CNTs by source and drain gives rise to temperature gradient and consequent thermoelectric power (TEP) as such a device is exposed to the sub-THz radiation. Sign of the DC signal, its power and gate voltage dependence observed at room temperature are consistent with this scenario. At liquid helium temperature the observed response is more complex. DC voltage signal of an opposite sign is observed in a narrow range of gate voltages at low temperatures and under low radiation power. We argue that this may indicate a true photovoltaic response from small gap (less than 10meV) CNT’s, an effect never reported before. While it is not clear if the observed effects can be used to develop efficient THz detectors we note that the responsivity of our devices exceeds that of CNT based devices in microwave or THz range reported before at room temperature. Besides at 4.2 K notable increase of the sample conductance (at least four-fold) is observed. Our recent results with asymmetric carbon nanotube devices response to THz radiation (2.5 THz) will also be presented.  
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  Notes Approved no  
  Call Number Serial 1361  
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Author Yang, Y.; Fedorov, G.; Shafranjuk, S. E.; Klapwijk, T. M.; Cooper, B. K.; Lewis, R. M.; Lobb, C. J.; Barbara, P. url  doi
openurl 
  Title Electronic transport and possible superconductivity at Van Hove singularities in carbon nanotubes Type Journal Article
  Year 2015 Publication Nano Lett. Abbreviated Journal Nano Lett.  
  Volume 15 Issue 12 Pages 7859-7866  
  Keywords carbon nanotubes, CNT, tunable superconductivity, van Hove singularities  
  Abstract (up) Van Hove singularities (VHSs) are a hallmark of reduced dimensionality, leading to a divergent density of states in one and two dimensions and predictions of new electronic properties when the Fermi energy is close to these divergences. In carbon nanotubes, VHSs mark the onset of new subbands. They are elusive in standard electronic transport characterization measurements because they do not typically appear as notable features and therefore their effect on the nanotube conductance is largely unexplored. Here we report conductance measurements of carbon nanotubes where VHSs are clearly revealed by interference patterns of the electronic wave functions, showing both a sharp increase of quantum capacitance, and a sharp reduction of energy level spacing, consistent with an upsurge of density of states. At VHSs, we also measure an anomalous increase of conductance below a temperature of about 30 K. We argue that this transport feature is consistent with the formation of Cooper pairs in the nanotube.  
  Address Department of Physics, Georgetown University , Washington, District of Columbia 20057, United States  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1530-6984 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:26506109; Suuplementary info (attached to pdf) DOI: 10.1021/acs.nanolett.5b02564 Approved no  
  Call Number Serial 1782  
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Author Fedorov, G. E.; Stepanova, T. S.; Gazaliev, A. S.; Gaiduchenko, I. A.; Kaurova, N. S.; Voronov, B. M.; Goltzman, G. N. url  doi
openurl 
  Title Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection Type Journal Article
  Year 2016 Publication Semicond. Abbreviated Journal Semicond.  
  Volume 50 Issue 12 Pages 1600-1603  
  Keywords carbon nanotubes, CNT detectors  
  Abstract (up) Various asymmetric detecting devices based on carbon nanotubes (CNTs) are studied. The asymmetry is understood as inhomogeneous properties along the conducting channel. In the first type of devices, an inhomogeneous morphology of the CNT grid is used. In the second type of devices, metals with highly varying work functions are used as the contact material. The relation between the sensitivity and detector configuration is analyzed. Based on the data obtained, approaches to the development of an efficient detector of terahertz radiation, based on carbon nanotubes are proposed.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1063-7826 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1776  
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Author Ryzhii, V.; Otsuji, T.; Ryzhii, M.; Leiman, V. G.; Fedorov, G.; Goltzman, G. N.; Gayduchenko, I. A.; Titova, N.; Coquillat, D.; But, D.; Knap, W.; Mitin, V.; Shur, M. S. url  doi
openurl 
  Title Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection Type Journal Article
  Year 2016 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume 120 Issue 4 Pages 044501 (1 to 13)  
  Keywords carbon nanotubes, CNT detectors, plasmons  
  Abstract (up) We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the other contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for collective response of the lateral CNT networks which comprise a mixture of randomly oriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). The proposed model includes the concept of the collective two-dimensional (2D) plasmons in relatively dense networks of randomly oriented CNTs (CNT “felt”) and predicts the detector responsivity spectral characteristics exhibiting sharp resonant peaks at the signal frequencies corresponding to the 2D plasmonic resonances. The detection mechanism is the rectification of the ac current due the nonlinearity of the Schottky contact current-voltage characteristics under the conditions of a strong enhancement of the potential drop at this contact associated with the plasmon excitation. The detector responsivity depends on the fractions of the s- and m-CNTs. The burning of the near-contact regions of the m-CNTs or destruction of these CNTs leads to a marked increase in the responsivity in agreement with our experimental data. The resonant THz detectors with sufficiently dense lateral CNT networks can compete and surpass other THz detectors using plasmonic effects at room temperatures.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1777  
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Author Florya, I. N.; Korneeva, Y. P.; Sidorova, M. V.; Golikov, A. D.; Gaiduchenko, I. A.; Fedorov, G. E.; Korneev, A. A.; Voronov, B. M.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. url  doi
openurl 
  Title Energy relaxtation and hot spot formation in superconducting single photon detectors SSPDs Type Conference Article
  Year 2015 Publication EPJ Web of Conferences Abbreviated Journal EPJ Web of Conferences  
  Volume 103 Issue Pages 10004 (1 to 2)  
  Keywords SSPD, SNSPD  
  Abstract (up) We have studied the mechanism of energy relaxation and resistive state formation after absorption of a single photon for different wavelengths and materials of single photon detectors. Our results are in good agreement with the hot spot model.  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2100-014X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1351  
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Author Matyushkin, Y.; Kaurova, N.; Voronov, B.; Goltsman, G.; Fedorov, G. url  doi
openurl 
  Title On chip carbon nanotube tunneling spectroscopy Type Journal Article
  Year 2020 Publication Fullerenes, Nanotubes and Carbon Nanostructures Abbreviated Journal  
  Volume 28 Issue 1 Pages 50-53  
  Keywords carbon nanotubes, CNT, scanning tunneling microscope, STM  
  Abstract (up) We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method – tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes.  
  Address  
  Corporate Author Thesis  
  Publisher Taylor & Francis Place of Publication Editor  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number doi:10.1080/1536383X.2019.1671365 Serial 1269  
Permanent link to this record
 
 
Author Gayduchenko, I. A.; Fedorov, G. E.; Ibragimov, R. A.; Stepanova, T. S.; Gazaliev, A. S.; Vysochanskiy, N. A.; Bobrov, Y. A.; Malovichko, A. M.; Sosnin, I. M.; Bobrinetskiy, I. I. url  doi
openurl 
  Title Synthesis of single-walled carbon nanotube networks using monodisperse metallic nanocatalysts encapsulated in reverse micelles Type Journal Article
  Year 2016 Publication Chem. Ind. Belgrade Abbreviated Journal Chem. Ind. Belgrade  
  Volume 70 Issue 1 Pages 1-8  
  Keywords carbon nanotubes, CNT, reverse micelles  
  Abstract (up) We report on a method of synthesis of single-walled carbon nanotubes percolated networks on silicon dioxide substrates using monodisperse Co and Ni catalyst. The catalytic nanoparticles were obtained by modified method of reverse micelles of bis-(2-ethylhexyl) sulfosuccinate sodium in isooctane solution that provides the nanoparticle size control in range of 1 to 5 nm. The metallic nanoparticles of Ni and Co were characterized using transmission electron microscopy (TEM) and atomic-force microscopy (AFM). Carbon nanotubes were synthesized by chemical vapor deposition of CH4/H2 composition at temperature 1000 °С on catalysts pre-deposited on silicon dioxide substrate. Before temperature treatment during the carbon nanotube synthesis most of the catalyst material agglomerates due to magnetic forces while during the nanotube growth disintegrates into the separate nanoparticles with narrow diameter distribution. The formed nanotube networks were characterized using AFM, scanning electron microscopy (SEM) and Raman spectroscopy. We find that the nanotubes are mainly single-walled carbon nanotubes with high structural perfection up to 200 μm long with diameters from 1.3 to 1.7 nm consistent with catalyst nanoparticles diameter distribution and independent of its material.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0367-598X ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1779  
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Author Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. url  doi
openurl 
  Title Graphene-layer and graphene-nanoribbon FETs as THz detectors Type Conference Article
  Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1124 Issue Pages 051054  
  Keywords field-effect transistor, FET, monolayer graphene, graphene nanoribbons  
  Abstract (up) We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1300  
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Author Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. url  doi
openurl 
  Title The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts Type Conference Article
  Year 2018 Publication Materials Today: Proc. Abbreviated Journal Materials Today: Proc.  
  Volume 5 Issue 13 Pages 27301-27306  
  Keywords graphene nanoribbons, graphene-nanoribbon, GNR FET, field effect transistor  
  Abstract (up) We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2214-7853 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1316  
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Author Gayduchenko, I. A.; Fedorov, G. E.; Moskotin, M. V.; Yagodkin, D. I.; Seliverstov, S. V.; Goltsman, G. N.; Yu Kuntsevich, A.; Rybin, M. G.; Obraztsova, E. D.; Leiman, V. G.; Shur, M. S.; Otsuji, T.; Ryzhii, V. I. url  doi
openurl 
  Title Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices Type Journal Article
  Year 2018 Publication Nanotechnol. Abbreviated Journal Nanotechnol.  
  Volume 29 Issue 24 Pages 245204 (1 to 8)  
  Keywords single layer graphene, graphene nanoribbons  
  Abstract (up) We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity.  
  Address Physics Department, Moscow State University of Education, Moscow 119991, Russia. National Research Center 'Kurchatov Institute', 123182, Moscow, Russia  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0957-4484 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:29553479 Approved no  
  Call Number Serial 1308  
Permanent link to this record
 
 
Author Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. url  doi
openurl 
  Title Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation Type Journal Article
  Year 2013 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 103 Issue 18 Pages 181121 (1 to 5)  
  Keywords carbon nanotubes, CNT, THz radiation, SiO2 substrate  
  Abstract (up) We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0003-6951 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1171  
Permanent link to this record
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