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Semenov, A. D.; Goghidze, I. G.; Gol’tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M. |
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Title |
Evidence for the spectral dependence of nonequilibrium picosecond photoresponse of YBaCuO thin films |
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Journal Article |
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Year |
1993 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
63 |
Issue |
5 |
Pages |
681-683 |
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Keywords |
YBCO HTS detectors, nonequilibrium |
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Abstract  |
The transient voltage photoresponse of current biased YBaCuO thin films to 20 ps laser pulses of 0.63 and 1.54 μm wavelengths is measured for temperatures around the superconducting transition region. The fast picosecond decay of the response is followed by a slow nanosecond relaxation which is associated with the bolometric effect. The magnitude of the fast component of the response varies in proportion to the square root of wavelength that plausibly reflects multiplication processes of photoexcited electrons via electron–electron scattering and interaction with high energy phonons. |
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0003-6951 |
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1655 |
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Aksaev, E. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures |
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Journal Article |
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1989 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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50 |
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5 |
Pages |
283-286 |
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Keywords |
YBCO HTS films |
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The time of electron-phonon interaction tau(eph) in YBaCuO films at low temperatures is studied. This is measured as the time of resistance relaxation in the resistive state of the superconducter, and is also determined from the increase in resistance under the action of radiation. Consistent results of these methods show that resistance relaxation in the resistive state is caused by cooling of the electron subsystem with respect to the phonon subsystem. The time tau(eph) is found to be inversely proportional to the temperature and comes to 80 ps when T = 1.6 K and 5 ps when T = 30 K. 6 refs. |
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1690 |
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Gol’tsman, G. N.; Semenov, A. D.; Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gershenzon, E. M. |
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Title |
Electron-phonon interaction in thin YBaCuO films and fast detectors |
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Conference Article |
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1993 |
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Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
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Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
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112 |
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184-185 |
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Keywords |
YBCO HTS detectors |
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Abstract |
The thin. YBaCuO film response to laser and submillimeter radiation demonstrates the picosecond nonequilibrium peak on the nanosecond bolometric background. Experimental data give an evidence for the spectral dependence of picosecond photoresponse probably due to a poor efficiency of electron multiplication processes. Presented results prove an availability of fast YBaCuO thin film detector. |
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Meissner, M.; Pohl, R. O. |
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Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992 |
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1662 |
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Sergeev, A.; Semenov, A.; Trifonov, V.; Karasik, B.; Gol'tsman, G.; Gershenzon, E. |
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Title |
Heat transfer in YBaCuO thin film/sapphire substrate system |
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Journal Article |
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1994 |
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J. Supercond. |
Abbreviated Journal |
J. Supercond. |
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7 |
Issue |
2 |
Pages |
341-344 |
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Keywords |
YBCO films |
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Abstract |
The thermal boundary resistance at the YBaCuO thin film/Al2O3 substrate interface was investigated. The transparency for thermal phonons incident on the interface as well as for phonons moving from the substrate was determined. We have measured a transient voltage response of current-biased films to continuously modulated radiation. The observed knee in the modulation frequency dependence of the response reflects the crossover from the diffusion regime to the contact resistance regime of the heat transfer across the interface. The values of transparency were independently deduced both from the phonon escape time and from the time of phonon return to the film which were identified with peculiarities in the frequency dependence. The results are much more consistent with the acoustic mismatch theory than the diffuse mismatch model. |
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0896-1107 |
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1647 |
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Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V. |
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Title |
Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films |
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Conference Article |
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1996 |
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Czech J. Phys. |
Abbreviated Journal |
Czech J. Phys. |
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Volume |
46 |
Issue |
S5 |
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2489-2490 |
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Keywords |
Al, Be, Nb films |
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Abstract |
The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K). |
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0011-4626 |
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1767 |
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