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Gousev, Yu. P.; Olsson, H. K.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M. |
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NbN hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz |
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1998 |
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Proc. 9th Int. Symp. Space Terahertz Technol. |
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Proc. 9th Int. Symp. Space Terahertz Technol. |
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121-129 |
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NbN HEB mixers |
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We report on noise temperature measurements for a NbN phonon-cooled hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz. Radiation was coupled to the mixer, placed in a vacuum chamber of He cryostat, by means of a planar spiral antenna and a Si immersion lens. A backward-wave oscillator, tunable throughout the spectral range, delivered an output power of few 1.1W that was enough for optimum operation of the mixer. At 4.2 K ambient temperature and 1.025 THz radiation frequency, we obtained a receiver noise temperature of 1550 K despite of using a relatively noisy room-temperature amplifier at the intermediate frequency port. The noise temperature was fairly constant throughout the entire operation range and for intermediate frequencies from 1 GHz to 2 GHz. |
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1588 |
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Ryabchun, Sergey; Tong, Cheuk-yu Edward; Blundell, Raymond; Kimberk, Robert; Gol’tsman, Gregory |
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Stabilisation of a terahertz hot-electron bolometer mixer with microwave feedback control |
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2007 |
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Proc. 18th Int. Symp. Space Terahertz Technol. |
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Proc. 18th Int. Symp. Space Terahertz Technol. |
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193-198 |
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waveguide NbN HEB mixers, Allan variance, stability |
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We report on implementation of microwave feedback control loop to stabilise the performance of an HEB mixer receiver. It is shown that the receiver sensitivity increases by a factor of 4 over a 16-minute scan, and the corresponding Allan time increases up to 10 seconds, as opposed to an open loop value of 1 second. Our experiments also demonstrate that the receiver sensitivity is limited by the intermediate frequency chain. |
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1421 |
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Baubert, J.; Salez, M.; Delorme, Y.; Pons, P.; Goltsman, G.; Merkel, H.; Leconte, B. |
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Membrane-based HEB mixer for THz applications |
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2003 |
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Proc. SPIE |
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Proc. SPIE |
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5116 |
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551-562 |
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membrane NbN HEB mixers, heterodyne receiver, stress-less membrane, coupling efficiency, submillimeter-waves frequency, low-cost space applications |
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We report in this paper a new concept for 2.7 THz superconducting Niobium nitride (NbN) Hot-Electron Bolometer mixer (HEB). The membrane process was developped for space telecommnunication applications a few years ago and the HEB mixer concept is now considered as the best choice for low-noise submillimeter-wave frequency heterodyne receivers. The idea is then to join these two technologies. The novel fabrication scheme is to fabricate a NbN HEB mixer on a 1 μm thick stress-less Si3N4/SiO2 membrane. This seems to present numerous improvements concerning : use at higher RF frequencies, power coupling efficiency, HEB mixer sensitivity, noise temperature, and space applications. This work is to be continued within the framework of an ESA TRP project, a 2.7 THz heterodyne camera with numerous applications including a SOFIA airborne receiver. This paper presents the whole fabrication process, the validation tests and preliminary results. Membrane-based HEB mixer theory is currently being investigated and further tests such as heterodyne and Fourier transform spectrometry measurement are planed shortly. |
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SPIE |
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Chiao, J.-C.; Varadan, V.K.; Cané, C. |
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Smart Sensors, Actuators, and MEMS |
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1520 |
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Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Voronov, B.; Grishina, E.; Klapwijk, T. M.; Gol'tsman, G.; Zorman, C. A. |
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Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? |
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2006 |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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Proc. 17th Int. Symp. Space Terahertz Technol. |
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187-189 |
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NbN HEB mixers |
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We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm). |
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1439 |
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Pentin, I. V.; Smirnov, A. V.; Ryabchun, S. A.; Ozhegov, R. V.; Gol’tsman, G. N.; Vaks, V. L.; Pripolzin, S. I.; Pavel’ev, D. G.; Koshurinov, Y. I.; Ivanov, A. S. |
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Semiconducting superlattice as a solid-state terahertz local oscillator for NbN hot-electron bolometer mixers |
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2012 |
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Tech. Phys. |
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Tech. Phys. |
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57 |
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7 |
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971-974 |
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semiconducting superlattice frequency multiplier, NbN HEB mixers |
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We present the results of our studies of the semiconducting superlattice (SSL) frequency multiplier and its application as part of the solid state local oscillator (LO) in the terahertz heterodyne receiver based on a NbN hot-electron bolometer (HEB) mixer. We show that the SSL output power level increases as the ambient temperature is lowered to 4.2 K, the standard HEB operation temperature. |
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1063-7842 |
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