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Cherednichenko, S.; Ronnung, F.; Gol'tsman, G.; Gershenzon, E.; Winkler, D. |
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Title |
YBa2Cu3O7-δ hot-electron bolometer with submicron dimensions |
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Conference Article |
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1999 |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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181-189 |
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YBCO HTS HEB mixers |
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Photoresponse of YBa2Cu3O7-δ hot-electron bolometers to modulated near-infrared radiation was studied at a modulation .frequenc y var y ing from 0.2 MHz to 2 GHz. Bolometers were _fabricated from a 50 12 M thick film and had in-plane areas of 10x10 , um 2 . 2x0.2 s um', 1x0.2 p.m', and 0.5x0.2 jim. We found that nonequilibrium phonons cool down more effectively for the bolometers with smaller area. For the smallest bolometer the bolometric component in the response is 10 dB less than for the largest one. |
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1572 |
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Author |
Gol’tsman, G. N.; Gershenzon, E. M. |
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Title |
High speed hot-electron superconducting bolometer |
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1993 |
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Proc. SPIE |
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Proc. SPIE |
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2104 |
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181-182 |
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NbN HEb, Nb, Al |
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Physical limitation of response time of a superconducting bolometer as well as the nature of non-equilibrium detection of radiation have been investigated for Al, Nb and NbN thin films in spectral range from submillimeter to near-infraredwavelengths [1,2]. In the case of ideal heat removal from the film with the f_‘. 100A thickness the detection mechanism is an electron heating effect that is not selective to radiation wavelength in a very broad range. The response time ofan electron heating bolometer is determined by an electron-phonon interaction time. This time is of about 10 ns, 0.5 ns and 20 ps for Al, Nb, and NbN correspondingly near the critical temperature of the superconducting film. Thesensitive area of the bolometer consists of a number of narrow strips (with awidth of 1µm) connected in parallel to contact pads; these pads together witha sapphire substrate and a ground plate represent the microstrip transmissionline with an impedance of 50 Q. |
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SPIE |
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Birch, J.R.; Parker, T.J. |
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18th International Conference on Infrared and Millimeter Waves |
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1652 |
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Danerud, M.; Winkler, D.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N.; Lindgren, M. |
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Title |
Picosecond detection of infrared radiation with YBa2Cu3O7-δ thin films |
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1993 |
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Proc. SPIE |
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Proc. SPIE |
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2104 |
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183-184 |
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YBCO HTS HEB detectors |
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Picosecond nonequilibrium and slow bolometric responses from a patterned high-Tc superconducting (HTS) film due toinfrared radiation were investigated using both modulation and pulse techniques. Measurements at A, = 0.85 [tm andA, = 10.6 lim have shown a similar behaviour of the response vs modulation frequency f. The responsivity of the HTS filmbased detector at f ..- 0.6-1 GHz is estimated to be 10-2 – 10-1 V/W. |
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Spie |
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Birch, J.R.; Parker, T.J. |
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18th International Conference on Infrared and Millimeter Waves |
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https://inis.iaea.org/search/searchsinglerecord.aspx?recordsFor=SingleRecord&RN=25034664 |
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10.1117/12.2298489 |
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1653 |
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Gol'tsman, G.; Maslennikov, S.; Finkel, M.; Antipov, S.; Kaurova, N.; Grishina, E.; Polyakov, S.; Vachtomin, Y.; Svechnikov, S.; Smirnov, K.; Voronov, B. |
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Title |
Nanostructured ultrathin NbN film as a terahertz hot-electron bolometer mixer |
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2006 |
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Proc. MRS |
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Proc. MRS |
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935 |
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210 (1 to 6) |
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NbN HEB mixers |
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Planar spiral antenna coupled and directly lens coupled NbN HEB mixer structures are studied. An additional MgO buffer layer between the superconducting film and Si substrate is introduced. The buffer layer enables us to increase the gain bandwidth of a HEB mixer due to better acoustic transparency. The gain bandwidth is widened as NbN film thickness decreases and amounts to 5.2 GHz. The noise temperature of antenna coupled mixer is 1300 and 3100 K at 2.5 and 3.8 THz respectively. The structure and composition of NbN films is investigated by X-ray diffraction spectroscopy methods. Noise performance degradation at LO frequencies more than 3 THz is due to the use of a planar antenna and signal loss in contacts between the antenna and the sensitive NbN bridge. The mixer is reconfigured for operation at higher frequencies in a manner that receiver’s noise temperature is only 2300 K (3 times of quantum limit) at LO frequency of 30 THz. |
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0272-9172 |
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1440 |
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Bandurin, Denis; Svintsov, Dmitry; Gayduchenko, Igor; Xu, Shuigang; Principi, Alessandro; Moskotin, Maksim; Tretyakov, Ivan; Yagodkin, Denis; Zhukov, Sergey; Taniguchi, Takashi; Watanabe, Kenji; Grigorieva, Irina; Polini, Marco; Goltsman, Gregory; Geim, Andre; Fedorov, Georgy |
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Title |
Resonant terahertz photoresponse and superlattice plasmons in graphene field-effect transistors |
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2019 |
Publication |
APS March Meeting |
Abbreviated Journal |
APS March Meeting |
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F14.015 |
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Plasmons, collective oscillations of electron systems, can couple light and electric current, and thus can be used to create compact photodetectors, radiation mixers, and spectrometers. Despite the effort, it has proven challenging to implement plasmonic devices operating at THz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically-tunable plasmons. In this talk, we will demonstrate plasmon-assisted resonant detection of THz radiation by antenna-coupled graphene FETs that act as both rectifying elements and plasmonic Fabry-Perot cavities amplifying the photoresponse. We will show that by varying the plasmon velocity using gate voltage, our detectors can be tuned between multiple resonant modes, a functionality that we apply to measure plasmons' wavelength and lifetime in graphene as well as to probe collective modes in its moire minibands. Our approach offers a convenient tool for further plasmonic research that is often difficult under non-ambient conditions and promises a viable route for various THz applications. We acknowledge Leverhulme Trust, Russian Science Foundation Grants N18-72-00234 and 17-72-30036, Russian Foundation for Basic Research No. 18-57-06001 and 16-29-03402. |
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