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| Author | Henrich, D.; Dorner,S.; Hofherr, M.; Il'in, K.; Semenov, A.; Heintze, E.; Scheffler, M.; Dressel, M.; Siegel, M. | ||||
| Title | Broadening of hot-spot response spectrum of superconducting NbN nanowire single-photon detector with reduced nitrogen content | Type | Journal Article | ||
| Year | 2012 | Publication | Abbreviated Journal | J. Appl. Phys. | |
| Volume | 112 | Issue | Pages | ||
| Keywords | SSPD, SNSPD, magnetron sputtering, spectrum, NbN film, nitrogen concentration | ||||
Abstract  |
The spectral detection efficiency and the dark count rate of superconducting nanowire single-photon detectors (SNSPD) have been studied systematically on detectors made from thin NbN films with different chemical compositions. Reduction of the nitrogen content in the 4 nm thick NbN films results in a decrease of the dark count rates more than two orders of magnitude and in a red shift of the cut-off wavelength of the hot-spot SNSPD response. The observed phenomena are explained by an improvement of uniformity of NbN films that has been confirmed by a decrease of resistivity and an increase of the ratio of the measured critical current to the depairing current. The latter factor is considered as the most crucial for both the cut-off wavelength and the dark count rates of SNSPD. Based on our results we propose a set of criteria for material properties to optimize SNSPD in the infrared spectral region. VC 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757625] |
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| Address | |||||
| Corporate Author | D. Henrich, S. Dorner, M. Hofherr, K. Il'in, A. Semenov, E. Heintze, M. Scheffler, M. Dressel, M. Siegel | Thesis | |||
| Publisher | Place of Publication | Editor | |||
| Language | English | Summary Language | Original Title | Broadening of hot-spot response spectrum of superconducting NbN nanowire single-photon detector with reduced nitrogen content | |
| Series Editor | Series Title | Abbreviated Series Title | |||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ seleznev @ | Serial | 877 | ||
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| Author | Wei, Jian; Olaya, David; Karasik, Boris S.; Pereverzev, Sergey V.; Sergeev, Andrei V.; Gershenson, Michael E. | ||||
| Title | Ultrasensitive hot-electron nanobolometers for terahertz astrophysics | Type | Journal Article | ||
| Year | 2008 | Publication | Nature Nanotechnology | Abbreviated Journal | Nature Nanotech |
| Volume | 3 | Issue | 8 | Pages | 496-500 |
| Keywords | HEB, Ti/NbN, single terahertz photons, detection | ||||
| Abstract |
The submillimetre or terahertz region of the electromagnetic spectrum contains approximately half of the total luminosity of the Universe and 98% of all the photons emitted since the Big Bang. This radiation is strongly absorbed in the Earth's atmosphere, so space-based terahertz telescopes are crucial for exploring the evolution of the Universe. Thermal emission from the primary mirrors in these telescopes can be reduced below the level of the cosmic background by active cooling, which expands the range of faint objects that can be observed. However, it will also be necessary to develop bolometers – devices for measuring the energy of electromagnetic radiation—with sensitivities that are at least two orders of magnitude better than the present state of the art. To achieve this sensitivity without sacrificing operating speed, two conditions are required. First, the bolometer should be exceptionally well thermally isolated from the environment; second, its heat capacity should be sufficiently small. Here we demonstrate that these goals can be achieved by building a superconducting hot-electron nanobolometer. Its design eliminates the energy exchange between hot electrons and the leads by blocking electron outdiffusion and photon emission. The thermal conductance between hot electrons and the thermal bath, controlled by electron–phonon interactions, becomes very small at low temperatures (10-16 WK-1 at 40 mK). These devices, with a heat capacity of 10-19 J K-1, are sufficiently sensitive to detect single terahertz photons in submillimetre astronomy and other applications based on quantum calorimetry and photon counting. |
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1748-3387 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 576 | |||
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| Author | Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Gap frequency and photon absorption in a hot electron bolometer | Type | Conference Article | ||
| Year | 2016 | Publication | Proc. 27th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 27th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 121 | ||
| Keywords | NbN HEB; Si membrane | ||||
| Abstract |
The superconducting energy gap is a crucial parameter of a superconductor when used in mixing applications. In the case of the SIS mixer, the mixing process is efficient for frequencies below the energy gap, whereas, in the case of the HEB mixer, the mixing process is most efficient at frequencies above the gap, where photon absorption takes place more readily. We have investigated the photon absorption phenomenon around the gap frequency of HEB mixers based on NbN films deposited on silicon membranes. Apart from studying the pumped I-V curves of HEB devices, we have also probed them with microwave radiation, as previously described [1]. At frequencies far below the gap frequency, the pumped I-V curves show abrupt switching between the superconducting and resistive states. For the NbN HEB mixers we tested, which have critical temperatures of ~9 K, this is true for frequencies below about 400 GHz. As the pump frequency is increased beyond 400 GHz, the resistive state extends towards zero bias and at some point a small region of negative differential resistance appears close to zero bias. In this region, the microwave probe reveals that the device impedance is changing randomly with time. As the pump frequency is further increased, this random impedance change develops into relaxation oscillations, which can be observed by the demodulation of the reflected microwave probe. Initially, these oscillations take the form of several frequencies grouped together under an envelope. As we approach the gap frequency, the multiple frequency relaxation oscillations coalesce into a single frequency of a few MHz. The resultant square-wave nature of the oscillation is a clear indication that the device is in a bi-stable state, switching between the superconducting and normal state. Above the gap frequency, it is possible to obtain a pumped I-V curve with no negative differential resistance above a threshold pumping level. Below this pumping level, the device demonstrates bi-stability, and regular relaxation oscillation at a few MHz is observed as a function of pump power. The threshold pumping level is clearly related to the amount of power absorbed by the device and its phonon cooling. From the above experiment, we can derive the gap frequency of the NbN film, which is 585 GHz for our 6 μm thin silicon membrane-based device. We also confirm that the HEB mixer is not an efficient photon absorber for radiation below the gap frequency. 1. A. Trifonov et al., “Probing the stability of HEB mixers with microwave injection”, IEEE Trans. Appl. Supercond., vol. 25, no. 3, June 2015. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1204 | |||
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| Author | Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Photon absorption near the gap frequency in a hot electron bolometer | Type | Journal Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages | 1-4 |
| Keywords | NBN HEB mixer | ||||
| Abstract |
The superconducting energy gap is a fundamental characteristic of a superconducting film, which, together with the applied pump power and the biasing setup, defines the instantaneous resistive state of the Hot Electron Bolometer (HEB) mixer at any given bias point on the I-V curve. In this paper we report on a series of experiments, in which we subjected the HEB to radiation over a wide frequency range along with parallel microwave injection. We have observed three distinct regimes of operation of the HEB, depending on whether the radiation is above the gap frequency, far below it or close to it. These regimes are driven by the different patterns of photon absorption. The experiments have allowed us to derive the approximate gap frequency of the device under test as about 585 GHz. Microwave injection was used to probe the HEB impedance. Spontaneous switching between the superconducting (low resistive) state and a quasi-normal (high resistive) state was observed. The switching pattern depends on the particular regime of HEB operation and can assume a random pattern at pump frequencies below the gap to a regular relaxation oscillation running at a few MHz when pumped above the gap. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1558-2515 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1331 | |||
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| Author | Zorin, M.; Milostnaya, I.; Gol'tsman, G. N.; Gershenzon, E. M. | ||||
| Title | Fast NbN superconducting switch controlled by optical radiation | Type | Journal Article | ||
| Year | 1997 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 7 | Issue | 2 | Pages | 3734-3737 |
| Keywords | NbN superconducting switch | ||||
| Abstract |
The switching time and the optical control power of the NbN superconducting switch have been measured. The device is based on the ultrathin film 5-8 nm thick patterned as a structure of several narrow parallel strips (/spl sim/1 /spl mu/m wide) connected to wide current leads. The current-voltage characteristic of the switch at temperature 4.2 K demonstrated a hysteresis due to DC current self-heating. We studied the superconducting-to-resistive state transition induced by both optical and bias-current excitations. The optical pulse duration was /spl sim/20 ps and the rise time of the current step was determined to be less than 50 ps. The optical pulse was delivered to the switch by the semiconductor laser through an optical fiber. We found that the measured switching time is less than the duration of the optical excitation. The threshold optical power density does not exceed 3/spl middot/10/sup 3/ W/cm/sup 2/. The proposed device can be used in the fiber input of LTS rapid single flux quantum circuits. | ||||
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| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1596 | |||
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