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Author Gousev, Yu. P.; Olsson, H. K.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
Title NbN hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz Type Conference Article
Year 1998 Publication Proc. 9th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 9th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 121-129
Keywords NbN HEB mixers
Abstract (up) We report on noise temperature measurements for a NbN phonon-cooled hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz. Radiation was coupled to the mixer, placed in a vacuum chamber of He cryostat, by means of a planar spiral antenna and a Si immersion lens. A backward-wave oscillator, tunable throughout the spectral range, delivered an output power of few 1.1W that was enough for optimum operation of the mixer. At 4.2 K ambient temperature and 1.025 THz radiation frequency, we obtained a receiver noise temperature of 1550 K despite of using a relatively noisy room-temperature amplifier at the intermediate frequency port. The noise temperature was fairly constant throughout the entire operation range and for intermediate frequencies from 1 GHz to 2 GHz.
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Call Number Serial 1588
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Author Schubert, J.; Semenov, A.; Gol'tsman, G.; Hübers, H.-W.; Schwaab, G.; Voronov, B.; Gershenzon, E.
Title Noise temperature and sensitivity of a NbN hot-electron mixer at frequencies from 0.7 THz to 5.2 THz Type Conference Article
Year 1999 Publication Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 10th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 190-199
Keywords NbN HEB mixers
Abstract (up) We report on noise temperature measurements of a NbN phonon-cooled hot-electron bolometric mixer at different bias regimes. The device was a 3 nm thick bridge with in-plane dimensions of 1.7 x 0.2 gm 2 integrated in a complementary logarithmic spiral antenna. Measurements were performed at frequencies ranging from 0.7 THz up to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz) 5600 K (4.3 THz) and 8800 K (5.2 THz). Two bias regimes are possible in order to achieve low noise temperatures. But only one of them yields sensitivity fluctuations close to the theoretical limit.
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Call Number Serial 1573
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Author Schubert, J.; Semenov, A.; Gol'tsman, G.; Hübers, H.-W.; Schwaab, G.; Voronov, B.; Gershenzon, E.
Title Noise temperature of an NbN hot-electron bolometric mixer at frequencies from 0.7 THz to 5.2 THz Type Journal Article
Year 1999 Publication Supercond. Sci. Technol. Abbreviated Journal
Volume 12 Issue 11 Pages 748-750
Keywords NbN HEB mixers
Abstract (up) We report on noise temperature measurements of an NbN phonon-cooled hot-electron bolometric mixer in the terahertz frequency range. The devices were 3 nm thick films with in-plane dimensions 1.7 × 0.2 µm2 and 0.9 × 0.2 µm2 integrated in a complementary logarithmic-spiral antenna. Measurements were performed at seven frequencies ranging from 0.7 THz to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz), 5600 K (4.3 THz) and 8800 K (5.2 THz).
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Call Number Serial 298
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Author Tretyakov, Ivan; Seliverstov, Sergey; Zolotov, Philipp; Kaurova, Natalya; Voronov, Boris; Finkel, Matvey; Goltsman, Gregory
Title Noise temperature and noise bandwidth of hot-electron bolometer mixer at 3.8 THz Type Abstract
Year 2014 Publication Proc. 25th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 25th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 77
Keywords NbN HEB mixer
Abstract (up) We report on our recent results of double sideband (DSB) noise temperature and bandwidth measurements of quasi-optical hot electron bolometer (HEB) mixers at local oscillator frequency of 3.8 THz. The HEB mixers used in this work were made of a NbN thin film and had a superconducting transition temperature of about 10.3 K. To couple terahertz radiation, the NbN microbridge (0.2 μm long and 2 μm wide) was integrated with a planar logarithmic-spiral antenna. The mixer chip was glued to an elliptical Si lens clamped tightly to a mixer block mounted on the 4.2 K plate of a liquid helium cryostat. The terahertz radiation was fed into the HEB device through the cryostat window made of a 0.5 mm thick HDPE. A band-pass mesh filter was mounted on the 4.2 K plate to minimize the direct detection effect [1]. We used a gas discharge laser irradiating at 3.8 THz H 2 0 line as a local oscillator (LO). The LO power was combined with a black body broadband radiation via Mylar beam splitter. Our receiver allows heterodyne detection with an intermediate frequency (IF) of a several gigahertz which dictates usage of a wideband SiGe low noise amplifier [2]. The receiver IF output signal was further amplified at room temperature and fed into a square-law power detector through a band-pass filter. The DSB receiver noise temperature was measured using a conventional Y-factor technique at IF of 1.25 GHz and band of 40 MHz. Using wideband amplifiers at both cryogenic and room temperature stages we have estimated IF bandwidth of the HEB mixers used. The obtained results strengthen the position of the HEB mixer as one of the most important tools for submillimeter astronomy. This device operates well above the energy gap (at frequencies above 1 THz) where performance of state-of-the-art SIS mixers starts to degrade. So, HEB mixers are expected to be a device of choice in astrophysical observations (ground-, aircraft- and space-based) at THz frequencies due to its excellent noise performance and low LO power requirements. The HEB mixers will be in operation on Millimetron Space Observatory. References 1. J. J. A. Baselmans, A. Baryshev, S. F. Reker, M. Hajenius, J. R. Gao, T. M. Klapwijk, Yu. Vachtomin, S. Maslennikov, S. Antipov, B. Voronov, and G. Gol'tsman, Appl. Phys. Lett., 86, 163503 (2005). 2. Sander Weinreb, Life Fellow, IEEE, Joseph C. Bardin, Student Member, IEEE, and Hamdi Mani, “Design of Cryogenic SiGe Low-Noise Amplifiers”, IEEE Transactions on Microwave Theory and Techniques, 55, 11, 2007.
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Call Number Serial 1362
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Author Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E.
Title The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate Type Conference Article
Year 1996 Publication Proc. 7th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 7th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 290-302
Keywords NbN HEB mixers, fabrication process
Abstract (up) We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K.
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Publisher Place of Publication Charlottesville, Virginia, USA Editor
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Notes Approved no
Call Number Serial 266
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