| Records |
| Author |
Lang, P. T.; Leipold, I.; Knott, W. J.; Semenov, A. D.; Gol'tsman, G. N.; Renk, K. F. |
| Title |
New far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser |
Type |
Journal Article |
| Year |
1991 |
Publication |
Appl. Phys. B |
Abbreviated Journal |
Appl. Phys. B |
| Volume |
53 |
Issue |
4 |
Pages |
207-212 |
| Keywords |
CO2 IR lasers, applications, CH3Cl, CH3Br |
Abstract  |
In this paper we report on the detection of new far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser. We found 80 new lines for CH3Cl and 9 new lines for CH3Br in the frequency region between 16 cm−1 and 41 cm−1, all due to stimulated Raman scattering. For the Raman gain regions bandwidths up to about 700 MHz were found. We also observed high intensity short far-infrared laser pulses of durations in the nanosecond regime. |
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| ISSN |
0721-7269 |
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no |
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1678 |
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| Author |
Shurakov, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Zilberley, T.; Prikhodko, A.; Voronov, B.; Vasil’evskii, I.; Goltsman, G. |
| Title |
Planar Schottky diode with a Γ-shaped anode suspended bridge |
Type |
Conference Article |
| Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1695 |
Issue |
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Pages |
012154 |
| Keywords |
Schottky diode, GaAs, InP substrate |
| Abstract |
In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate. |
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1742-6588 |
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no |
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1152 |
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| Author |
Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G. |
| Title |
Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector |
Type |
Conference Article |
| Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1695 |
Issue |
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Pages |
012156 |
| Keywords |
Shottky diode, THz, direct detector, multipixel camera |
| Abstract |
In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns. |
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1742-6588 |
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1153 |
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| Author |
Zhang, W.; Miao, W.; Zhong, J. Q.; Shi, S. C.; Hayton, D. J.; Vercruyssen, N.; Gao, J. R.; Goltsman, G. N. |
| Title |
Temperature dependence of the receiver noise temperature and IF bandwidth of superconducting hot electron bolometer mixers |
Type |
Journal Article |
| Year |
2014 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
| Volume |
27 |
Issue |
8 |
Pages |
085013 (1 to 5) |
| Keywords |
NbN HEB mixers |
| Abstract |
In this paper we study the temperature dependence of the receiver noise temperature and IF noise bandwidth of superconducting hot electron bolometer (HEB) mixers. Three superconducting NbN HEB devices of different transition temperatures (Tc) are measured at 0.85 THz and 1.4 THz at different bath temperatures (Tbath) between 4 K and 9 K. Measurement results demonstrate that the receiver noise temperature of superconducting NbN HEB devices is nearly constant for Tbath/Tc, less than 0.8, which is consistent with the simulation based on a distributed hot-spot model. In addition, the IF noise bandwidth appears independent of Tbath/Tc, indicating the dominance of phonon cooling in the investigated HEB devices. |
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0953-2048 |
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no |
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1358 |
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Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Wilsher, K.; Lo, W.; Okunev, O.; Korneev, A.; Kouminov, P.; Chulkova, G.; Gol’tsman, G. N. |
| Title |
A superconducting single-photon detector for CMOS IC probing |
Type |
Conference Article |
| Year |
2003 |
Publication |
Proc. 16-th LEOS |
Abbreviated Journal |
Proc. 16-th LEOS |
| Volume |
2 |
Issue |
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Pages |
602-603 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
In this paper, a novel, time-resolved, NbN-based, superconducting single-photon detector (SSPD) has been developed for probing CMOS integrated circuits (ICs) using photon emission timing analysis (PETA). |
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The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003. |
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Serial |
1510 |
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