| Records |
| Author |
Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. |
| Title |
Electron–phonon interaction in disordered conductors |
Type |
Journal Article |
| Year |
1999 |
Publication |
Phys. Rev. B Condens. Matter |
Abbreviated Journal |
Phys. Rev. B Condens. Matter |
| Volume |
263-264 |
Issue |
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Pages |
190-192 |
| Keywords |
disordered conductors, electron-phonon interaction |
Abstract  |
The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model. |
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| ISSN |
0921-4526 |
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1765 |
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Semenov, A. D.; Nebosis, R. S.; Gousev, Yu. P.; Heusinger, M. A.; Renk, K. F. |
| Title |
Analysis of the nonequilibrium photoresponse of superconducting films to pulsed radiation by use of a two-temperature model |
Type |
Journal Article |
| Year |
1995 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
52 |
Issue |
1 |
Pages |
581-590 |
| Keywords |
HEB, NbN phonon scecific heat, Cp |
| Abstract |
Photoresponse of a superconducting film in the resistive state to pulsed radiation has been studied in the framework of a model assuming that two different effective temperatures can be assigned to the quasiparticle and phonon nonequilibrium distributions. The coupled electron-phonon-substrate system is described by a system of time-dependent energy-balance differential equations for effective temperatures. An analytical solution of the system is given and calculated voltage transients are compared with experimental photoresponse signals taking into account the radiation pulse shape and the time resolution of the readout electronics. It is supposed that a resistive state (vortices, fluxons, network of intergrain junctions, hot spots, phase slip centers) provides an ultrafast connection between electron temperature changes and changes of the film resistance and thus plays a minor role in the temporal evolution of the response. In accordance with experimental observations a two-component response was revealed from simulations. The slower component corresponds to a bolometric mechanism while the fast component is connected with the relaxation of the electron temperature. Calculated photoresponse transients are presented for different ratios of the electron and phonon specific heat, radiation pulse durations and fluences, and frequency band passes of registration electronics. From the amplitude of the bolometric component we determine the radiation energy absorbed in a film. This enables us to reveal an intrinsic electron-phonon scattering time even if it is much shorter than the time resolution of readout electronics. We analyze experimental voltage transients for NbN, YBa2Cu3O7, and TlBa2Ca2Cu3O9 superconducting films and find the electron-phonon interaction times at the transition temperatures of 17, 2.5, and 1.8 ps, respectively. The values are in reasonable agreement with data of other experiments. |
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903 |
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Huard, B.; Pothier, H.; Esteve, D.; Nagaev, K. E. |
| Title |
Electron heating in metallic resistors at sub-Kelvin temperature |
Type |
Journal Article |
| Year |
2007 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
76 |
Issue |
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Pages |
165426(1-9) |
| Keywords |
electron heating in resistor, HEB distributed model, HEB model, hot electrons |
| Abstract |
In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic diffusion to and from the connecting wires and electron-phonon coupling. The goal of this paper is to present a general solution of the problem in a form that can easily be used in practical situations. As an application, we compute two quantities that depend on the electronic temperature profile: the second and the third cumulant of the current noise at zero frequency, as a function of the voltage across the resistor. We also consider time-dependent heating, an issue relevant for experiments in which current pulses are used, for instance, in time-resolved calorimetry experiments. |
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Recommended by Klapwijk as example for writing the article on the HEB model. |
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no |
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Serial |
936 |
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| Author |
Sergeev, A.; Mitin, V. |
| Title |
Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials |
Type |
Journal Article |
| Year |
2000 |
Publication |
Phys. Rev. B. |
Abbreviated Journal |
Phys. Rev. B. |
| Volume |
61 |
Issue |
9 |
Pages |
6041-6047 |
| Keywords |
disordered conductors, scattering potential, electron-phonon interaction |
| Abstract |
Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film. |
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0163-1829 |
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307 |
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Romijn, J.; Klapwijk, T. M.; Renne, M. J.; Mooij, J. E. |
| Title |
Critical pair-breaking current in superconducting aluminum strips far below Tc |
Type |
Journal Article |
| Year |
1982 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
26 |
Issue |
7 |
Pages |
3648-3655 |
| Keywords |
superconducting nanowire |
| Abstract |
Critical currents of narrow, thin aluminum strips have been measured as a function of temperature. For the smallest samples uniformity of the current density is obtained over a large temperature range. Hence the intrinsic limit on the currentcarrying capacity of the superconductor was measured outside the Ginzburg-Landau -regime. The experimental values are compared with recent theoretical predictions by Kupriyanov and Lukichev. An approximate method of solving their equations is given, the results of which agree with the exact solution to within 1%. Experimental data are in excellent agreement with theoretical predictions. The absolute values agree if one assumes a Ïl value of 4×10–16 Ωm2 with vF=1.3×106 m/s. This value for Ïl is the same as that found from measurements of the anomalous skin effect but differs from values extracted from size-effect-limited resistivity. |
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Recommended by Klapwijk |
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925 |
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