| Records |
| Author |
Korneev, A.; Divochiy, A.; Tarkhov, M.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Milostnaya, I.; Smirnov, K.; Gol'tsman, G. |
| Title |
New advanced generation of superconducting NbN-nanowire single-photon detectors capable of photon number resolving |
Type |
Conference Article |
| Year |
2008 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
97 |
Issue |
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Pages |
012307 (1 to 6) |
| Keywords |
PNR SSPD; SNSPD |
Abstract  |
We present our latest generation of ultrafast superconducting NbN single-photon detectors (SSPD) capable of photon-number resolving (PNR). We have developed, fabricated and tested a multi-sectional design of NbN nanowire structures. The novel SSPD structures consist of several meander sections connected in parallel, each having a resistor connected in series. The novel SSPDs combine 10 μm × 10 μm active areas with a low kinetic inductance and PNR capability. That resulted in a significantly reduced photoresponse pulse duration, allowing for GHz counting rates. The detector's response magnitude is directly proportional to the number of incident photons, which makes this feature easy to use. We present experimental data on the performances of the PNR SSPDs. The PNR SSPDs are perfectly suited for fibreless free-space telecommunications, as well as for ultrafast quantum cryptography and quantum computing. |
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| ISSN |
1742-6596 |
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1245 |
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| Author |
Milostnaya, I.; Korneev, A.; Tarkhov, M.; Divochiy, A.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G. |
| Title |
Superconducting single photon nanowire detectors development for IR and THz applications |
Type |
Journal Article |
| Year |
2008 |
Publication |
J. Low Temp. Phys. |
Abbreviated Journal |
J. Low Temp. Phys. |
| Volume |
151 |
Issue |
1-2 |
Pages |
591-596 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We present our progress in the development of superconducting single-photon detectors (SSPDs) based on meander-shaped nanowires made from few-nm-thick superconducting films. The SSPDs are operated at a temperature of 2–4.2 K (well below T c ) being biased with a current very close to the nanowire critical current at the operation temperature. To date, the material of choice for SSPDs is niobium nitride (NbN). Developed NbN SSPDs are capable of single photon counting in the range from VIS to mid-IR (up to 6 μm) with a record low dark counts rate and record-high counting rate. The use of a material with a low transition temperature should shift the detectors sensitivity towards longer wavelengths. We present state-of-the art NbN SSPDs as well as the results of our recent approach to expand the developed SSPD technology by the use of superconducting materials with lower T c , such as molybdenum rhenium (MoRe). MoRe SSPDs first were made and tested; a single photon response was obtained. |
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0022-2291 |
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1244 |
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Gol'tsman, G. N.; Korneev, A.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Minaeva, O.; Smirnov, K.; Voronov, B.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R. |
| Title |
Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications |
Type |
Journal Article |
| Year |
2005 |
Publication |
Phys. Stat. Sol. (C) |
Abbreviated Journal |
Phys. Stat. Sol. (C) |
| Volume |
2 |
Issue |
5 |
Pages |
1480-1488 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We present our progress on the research and development of NbN superconducting single‐photon detectors (SSPD's) for ultrafast counting of near‐infrared photons for secure quantum communications. Our SSPD's operate in the quantum detection mode based on the photon‐induced hotspot formation and subsequent development of a transient resistive barrier across an ultrathin and submicron‐width superconducting stripe. The devices are fabricated from 4‐nm‐thick NbN films and kept in the 4.2‐ to 2‐K temperature range. The detector experimental quantum efficiency in the photon‐counting mode reaches above 40% for the visible light and up to 30% in the 1.3‐ to 1.55‐µm wavelength range with dark counts below 0.01 per second. The experimental real‐time counting rate is above 2 GHz and is limited by our readout electronics. The SSPD's timing jitter is below 18 ps, and the best‐measured value of the noise‐equivalent power (NEP) is 5 × 10–21 W/Hz1/2 at 1.3 µm. In terms of quantum efficiency, timing jitter, and maximum counting rate, our NbN SSPD's significantly outperform semiconductor avalanche photodiodes and photomultipliers in the 1.3‐ to 1.55‐µm range. |
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| ISSN |
1610-1634 |
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no |
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1479 |
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| Author |
Kitaygorsky, J.; Komissarov, I.; Jukna, A.; Pan, D.; Minaeva, O.; Kaurova, N.; Divochiy, A.; Korneev, A.; Tarkhov, M.; Voronov, B.; Milostnaya, I.; Gol'tsman, G.; Sobolewski, R.R. |
| Title |
Dark counts in nanostructured nbn superconducting single-photon detectors and bridges |
Type |
Journal Article |
| Year |
2007 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
17 |
Issue |
2 |
Pages |
275-278 |
| Keywords |
SSPD; SNSPD |
| Abstract |
We present our studies on dark counts, observed as transient voltage pulses, in current-biased NbN superconducting single-photon detectors (SSPDs), as well as in ultrathin (~4 nm), submicrometer-width (100 to 500 nm) NbN nanobridges. The duration of these spontaneous voltage pulses varied from 250 ps to 5 ns, depending on the device geometry, with the longest pulses observed in the large kinetic-inductance SSPD structures. Dark counts were measured while the devices were completely isolated (shielded by a metallic enclosure) from the outside world, in a temperature range between 1.5 and 6 K. Evidence shows that in our two-dimensional structures the dark counts are due to the depairing of vortex-antivortex pairs caused by the applied bias current. Our results shed some light on the vortex dynamics in 2D superconductors and, from the applied point of view, on intrinsic performance of nanostructured SSPDs. |
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1051-8223 |
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no |
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1248 |
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Goltsman, G.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Chulkova, G.; Milostnaya, I.; Smirnov, K.; Voronov, B.; Lipatov, A. P.; Pearlman, A. J.; Cross, A.; Slysz, W.; Verevkin, A. A.; Sobolewski, R. |
| Title |
Advanced nanostructured optical NbN single-photon detector operated at 2.0 K |
Type |
Conference Article |
| Year |
2005 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
| Volume |
5732 |
Issue |
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Pages |
520-529 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We present our studies on quantum efficiency (QE), dark counts, and noise equivalent power (NEP) of the latest generation of nanostructured NbN superconducting single-photon detectors (SSPDs) operated at 2.0 K. Our SSPDs are based on 4 nm-thick NbN films, patterned by electron beam lithography as highly-uniform 100÷120-nm-wide meander-shaped stripes, covering the total area of 10x10 μm2 with the meander filling factor of 0.7. Advances in the fabrication process and low-temperature operation lead to QE as high as 30-40% for visible-light photons (0.56 μm wavelength)-the saturation value, limited by optical absorption of the NbN film. For 1.55 μm photons, QE was 20% and decreased exponentially with the wavelength reaching 0.02% at the 5-μm wavelength. Being operated at 2.0-K temperature the SSPDs revealed an exponential decrease of the dark count rate, what along with the high QE, resulted in the NEP as low as 5x10-21 W/Hz-1/2, the lowest value ever reported for near-infrared optical detectors. The SSPD counting rate was measured to be above 1 GHz with the pulse-to-pulse jitter below 20 ps. Our nanostructured NbN SSPDs operated at 2.0 K significantly outperform their semiconducting counterparts and find practical applications ranging from noninvasive testing of CMOS VLSI integrated circuits to ultrafast quantum communications and quantum cryptography. |
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Spie |
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Razeghi, M.; Brown, G.J. |
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Quantum Sensing and Nanophotonic Devices II |
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1478 |
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