Zhang, J., Pearlman, A., Slysz, W., Verevkin, A., Sobolewski, R., Wilsher, K., et al. (2003). A superconducting single-photon detector for CMOS IC probing. In Proc. 16-th LEOS (Vol. 2, pp. 602–603).
Abstract: In this paper, a novel, time-resolved, NbN-based, superconducting single-photon detector (SSPD) has been developed for probing CMOS integrated circuits (ICs) using photon emission timing analysis (PETA).
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Zhang, W., Li, N., Jiang, L., Ren, Y., Yao, Q. - J., Lin, Z. - H., et al. (2008). Dependence of noise temperature of quasi-optical superconducting hot-electron bolometer mixers on bath temperature and optical-axis displacement. In C. Zhang, & X. - C. Zhang (Eds.), Proc. SPIE (Vol. 6840, 684007 (1 to 8)). Spie.
Abstract: It is known that the increase of bath temperature results in the decrease of critical current of superconducting hot-electron bolometer (HEB) mixers owing to the depression of superconductivity, thus leading to the degradation of the mixer’s sensitivity. Here we report our study on the effect of bath temperature on the heterodyne mixing performance of quasi-optical superconducting NbN HEB mixers incorporated with a two-arm log-spiral antenna. The correlation between the bath temperature, critical current, LO power requirement and noise temperature is investigated at 0.5 THz. Furthermore, the heterodyne mixing performance of quasi-optical superconducting NbN HEB mixers is examined while there is an optical-axis displacement between the center of the extended hemispherical silicon lens and the superconducting NbN HEB device, which is placed on the back of the lens. Detailed experimental results and analysis are presented.
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Dauler, E. A., Kerman, A. J., Robinson, B. S., Yang, J. K. W., Voronov, B. M., Gol’tsman, G. N., et al. (2006). Achieving high counting rates in superconducting nanowire single-photon detectors. In CLEO/QELS (JTuD3 (1 to 2)). Optical Society of America.
Abstract: Kinetic inductance is determined to be the primary limitation to the counting rate of superconducting nanowire single-photon counters. Approaches for overcoming this limitation will be discussed.
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Vakhtomin, Y. B., Finkel, M. I., Antipov, S. V., Smirnov, K. V., Kaurova, N. S., Drakinskii, V. N., et al. (2003). The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer. J. of communications technol. & electronics, 48(6), 671–675.
Abstract: Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
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Zhang, J., Verevkin, A., Slysz, W., Chulkova, G., Korneev, A., Lipatov, A., et al. (2017). Time-resolved characterization of NbN superconducting single-photon optical detectors. In J. C. Armitage (Ed.), Proc. SPIE (Vol. 10313, 103130F (1 to 3)). SPIE.
Abstract: NbN superconducting single-photon detectors (SSPDs) are very promising devices for their picosecond response time, high intrinsic quantum efficiency, and high signal-to-noise ratio within the radiation wavelength from ultraviolet to near infrared (0.4 gm to 3 gm) [1-3]. The single photon counting property of NbN SSPDs have been investigated thoroughly and a model of hotspot formation has been introduced to explain the physics of the photon- counting mechanism [4-6]. At high incident flux density (many-photon pulses), there are, of course, a large number of hotspots simultaneously formed in the superconducting stripe. If these hotspots overlap with each other across the width w of the stripe, a resistive barrier is formed instantly and a voltage signal can be generated. We assume here that the stripe thickness d is less than the electron diffusion length, so the hotspot region can be considered uniform. On the other hand, when the photon flux is so low that on average only one hotspot is formed across w at a given time, the formation of the resistive barrier will be realized only when the supercurrent at sidewalks surpasses the critical current (jr) of the superconducting stripe [1]. In the latter situation, the formation of the resistive barrier is associated with the phase-slip center (PSC) development. The effect of PSCs on the suppression of superconductivity in nanowires has been discussed very recently [8, 9] and is the subject of great interest.
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