| Records |
| Author |
Kopp, Victor I.; Churikov, Victor M.; Zhang, Guoyin; Singer, Jonathan; Draper, Christopher W.; Chao, Norman; Neugroschl, Daniel; Genack, Azriel Z. |
| Title |
Chiral fiber gratings: perspectives and challenges for sensing applications |
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Conference Article |
| Year |
2007 |
Publication |
Proceedings of Third european workshop on optical fibre sensors |
Abbreviated Journal |
Proc. 3rd European Workshop on Opt. Fibre Sensors |
| Volume |
6619 |
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66190B-(1-8) |
| Keywords |
optical fiber gratings, chiral fiber gratings applications, chiral gratings applications, from chiralphotonics |
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Chiral fiber gratings are produced in a microforming process in which optical fibers with noncircular or nonconcentric cores are twisted as they pass though a miniature oven. Periodic glass structures as stable as the glass material itself are produced with helical pitch that ranges from under a micron to hundreds of microns. The geometry of the fiber cross section determines the symmetry of the resulting structure which in turn determines its polarization selectivity. Single helix structures are polarization insensitive while double helix gratings interact only with a single optical polarization. Both single and double helix gratings may act as a fiber long period grating, coupling the core and cladding modes. The coupling is manifested in a series of narrow dips in the transmission spectrum. The dip position is sensitive to fiber elongation, twist and temperature, and to the refractive index of the surrounding medium. The suitability of chiral gratings for sensing pressure, temperature and liquid levels is investigated. Polarization insensitive single helix silica glass gratings display excellent stability up to temperatures of 6000C, while a pressure sensor with dynamic range of nearly 40 dB is demonstrated in polarization selective double helix gratings. |
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855 |
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Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory |
| Title |
Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors |
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Abstract |
| Year |
2020 |
Publication |
Graphene and 2dm Virt. Conf. |
Abbreviated Journal |
Graphene and 2DM Virt. Conf. |
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single layer graphene, SLG, CVD, plasmons, FET |
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Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464. |
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Grenoble, France |
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Graphene and 2dm Virtual Conference & Expo |
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1743 |
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Mohan, Nishant; Minaeva, Olga; Goltsman, Gregory N.; Saleh, Mohammed F.; Nasr, Magued B.; Sergienko, Alexander V.; Saleh, Bahaa E.; Teich, Malvin C. |
| Title |
Ultrabroadband coherence-domain imaging using parametric downconversion and superconducting single-photon detectors at 1064 nm |
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Journal Article |
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2009 |
Publication |
Appl. Opt. |
Abbreviated Journal |
Appl. Opt. |
| Volume |
48 |
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20 |
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4009–4017 |
| Keywords |
SSPD, SNSPD, SPAD |
| Abstract |
Coherence-domain imaging systems can be operated in a single-photon-counting mode, offering low detector noise; this in turn leads to increased sensitivity for weak light sources and weakly reflecting samples. We have demonstrated that excellent axial resolution can be obtained in a photon-counting coherence-domain imaging (CDI) system that uses light generated via spontaneous parametric downconversion (SPDC) in a chirped periodically poled stoichiometric lithium tantalate (chirped-PPSLT) structure, in conjunction with a niobium nitride superconducting single-photon detector (SSPD). The bandwidth of the light generated via SPDC, as well as the bandwidth over which the SSPD is sensitive, can extend over a wavelength region that stretches from 700 to 1500 nm. This ultrabroad wavelength band offers a near-ideal combination of deep penetration and ultrahigh axial resolution for the imaging of biological tissue. The generation of SPDC light of adjustable bandwidth in the vicinity of 1064 nm, via the use of chirped-PPSLT structures, had not been previously achieved. To demonstrate the usefulness of this technique, we construct images for a hierarchy of samples of increasing complexity: a mirror, a nitrocellulose membrane, and a biological sample comprising onion-skin cells. |
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RPLAB @ gujma @ |
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652 |
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Moshkova, M. A.; Divochiy, A. V.; Morozov, P. V.; Antipov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V. |
| Title |
Characterization of topologies of superconducting photon number resolving detectors |
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Conference Article |
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2019 |
Publication |
Proc. 8th Int. Conf. Photonics and Information Optics |
Abbreviated Journal |
Proc. 8th Int. Conf. Photonics and Information Optics |
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465-466 |
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PNR SSPD |
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Comparative analysis for different topologies of superconducting single-photon detectors with ability to resolve up to 4 photons in a short pulse of IR radiation has been carry out. It was developed the detector with a system detection efficiency of ~ 85 % at λ = 1550 nm. The possibility of using such detector to restore photon statistics of a pulsed radiation source was demonstrated. |
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Russian |
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978-5-7262-2536-4 |
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http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf |
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1803 |
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Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I. |
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Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity |
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Conference Article |
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1996 |
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Czech. J. Phys. |
Abbreviated Journal |
Czech. J. Phys. |
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46 |
Issue |
S2 |
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857-858 |
| Keywords |
NbC films |
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Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory. |
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0011-4626 |
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1617 |
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