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Akhmadishina, K. F.; Bobrinetskiy, I. I.; Komarov, I. A.; Malovichko, A. M.; Nevolin, V. K.; Fedorov, G. E.; Golovin, A. V.; Zalevskiy, A. O.; Aidarkhanov, R. D. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Fast-response biological sensors based on single-layer carbon nanotubes modified with specific aptamers |
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Journal Article |
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Year |
2015 |
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Semicond. |
Abbreviated Journal |
Semicond. |
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Volume |
49 |
Issue |
13 |
Pages |
1749-1753 |
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carbon nanotubes, CNT detectors |
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The possibility of the fabrication of a fast-response biological sensor based on a composite of single-layer carbon nanotubes and aptamers for the specific detection of proteins is shown. The effect of modification of the surface of the carbon nanotubes on the selectivity and sensitivity of the sensors is investigated. It is shown that carboxylated nanotubes have a better selectivity for detecting thrombin. |
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1063-7826 |
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1783 |
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Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Generation of nanosecond terahertz pulses by the optical rectification method |
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Journal Article |
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Year |
2012 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
96 |
Issue |
2 |
Pages |
94-97 |
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Keywords |
optical rectification, lithium niobate crystal |
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Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
The possibility of the generation of quasi-cw terahertz radiation by the optical rectification method for broad-band Fourier unlimited nanosecond laser pulses has been experimentally demonstrated. The broadband radiation of a LiF dye-center laser is used as a pump source of a nonlinear optical oscillator. The energy efficiency of terahertz optical frequency conversion in a periodically polarized lithium niobate crystal is 4 × 10−9 at a pump power density of 7 MW/cm2. |
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0021-3640 |
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1377 |
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Ozhegov, R. V.; Gorshkov, K. N.; Okunev, O. V.; Gol’tsman, G. N. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Superconducting hot-electron bolometer mixer as element of thermal imager matrix |
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Journal Article |
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2010 |
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Tech. Phys. Lett. |
Abbreviated Journal |
Tech. Phys. Lett. |
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36 |
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11 |
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1006-1008 |
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HEB mixers |
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The possibility of using a matrix of sensitive elements on a 12-mm-diameter hyperhemispherical lens in a thermal imager operating in the terahertz range has been studied. Dimensions of a lens region acceptable for arrangement of the matrix, in which the receiver noise temperature varies within 16% of the mean value, are determined to be 3.3% of the lens diameter. Deviations of the main lobe of the directivity pattern are evaluated, which amount to ±1.25° relative to the direction toward the optimum position of a mixer. The fluctuation sensitivity of the receiver measured in experiment is 0.5 K at a frequency of 300 GHz. |
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1063-7850 |
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1390 |
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Lindgren, M.; Currie, M.; Zeng, W.-S.; Sobolewski, R.; Cherednichenko, S.; Voronov, B.; Gol'tsman, G. N. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Picosecond response of a superconducting hot-electron NbN photodetector |
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Journal Article |
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Year |
1998 |
Publication |
Appl. Supercond. |
Abbreviated Journal |
Appl. Supercond. |
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6 |
Issue |
7-9 |
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423-428 |
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Keywords |
NbN SSPD, SNSPD |
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The ps optical response of ultrathin NbN photodetectors has been studied by electro-optic sampling. The detectors were fabricated by patterning ultrathin (3.5 nm thick) NbN films deposited on sapphire by reactive magnetron sputtering into either a 5×10 μm2 microbridge or 25 1 μm wide, 5 μm long strips connected in parallel. Both structures were placed at the center of a 4 mm long coplanar waveguide covered with Ti/Au. The photoresponse was studied at temperatures ranging from 2.15 K to 10 K, with the samples biased in the resistive (switched) state and illuminated with 100 fs wide laser pulses at 395 nm wavelength. At T=2.15 K, we obtained an approximately 100 ps wide transient, which corresponds to a NbN detector response time of 45 ps. The photoresponse can be attributed to the nonequilibrium electron heating effect, where the incident radiation increases the temperature of the electron subsystem, while the phonons act as the heat sink. The high-speed response of NbN devices makes them an excellent choice for an optoelectronic interface for superconducting digital circuits, as well as mixers for the terahertz regime. The multiple-strip detector showed a linear dependence on input optical power and a responsivity =3.9 V/W. |
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0964-1807 |
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no |
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1584 |
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Il’in, K. S.; Milostnaya, I. I.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Sobolewski, R. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Ultimate quantum efficiency of a superconducting hot-electron photodetector |
Type |
Journal Article |
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Year |
1998 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
73 |
Issue |
26 |
Pages |
3938-3940 |
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NbN SSPD, SNSPD |
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Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4×104 V/W,
respectively, for infrared radiation with a wavelength of 0.79 μm. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs. |
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0003-6951 |
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1579 |
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Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Tunnel field-effect transistors for sensitive terahertz detection |
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Journal Article |
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Year |
2021 |
Publication |
Nat. Commun. |
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Nat. Commun. |
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12 |
Issue |
1 |
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543 |
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field-effect transistors, bilayer graphene, BLG |
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The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor. |
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Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu |
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2041-1723 |
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PMID:33483488; PMCID:PMC7822863 |
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1261 |
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Gershenzon, E.M.; Gol'tsman, G.N.; Dzardanov, A.L.; Kuznetsov, E.A. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Superconducting UHF-limiter based on electron heating up |
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Journal Article |
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1992 |
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Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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5 |
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11 |
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2164-2170 |
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electron heating, applications |
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The results of experimental investigation of fast-action 5HF-limiter are presented; the limiter is based on the utilization of electron hetaing phenomenon in thin superconducting films. The design of SHF-limiter, which is intended for operation at liquid helium temperatures and which has the form of a section of superconducting NbN microstrip line for 1-12 GHz rang, is described. |
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0235-8964 |
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1669 |
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Manova, N. N.; Korneeva, Yu. P.; Korneev, A. A.; Slysz, W.; Voronov, B. M.; Gol'tsman, G. N. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Superconducting NbN single-photon detector integrated with quarter-wave resonator |
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Journal Article |
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2011 |
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Tech. Phys. Lett. |
Abbreviated Journal |
Tech. Phys. Lett. |
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Volume |
37 |
Issue |
5 |
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469-471 |
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SSPD, SNSPD |
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The spectral dependence of the quantum efficiency of superconducting NbN single-photon detectors integrated with quarter-wave resonators based on Si3N4, SiO2, and SiO layers has been studied. |
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RPLAB @ gujma @ |
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664 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Observation of free carrier resonances in p-type germanium at submillimeter wavelengths |
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Journal Article |
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Year |
1978 |
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Sov. Phys. Solid State |
Abbreviated Journal |
Sov. Phys. Solid State |
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20 |
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4 |
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573-579 |
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p-Ge, free carriers, resonances |
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Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions. |
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1721 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field |
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Journal Article |
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1977 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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45 |
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3 |
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555-565 |
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Ge, GaAs, magnetic field, donors, energy spectrum |
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Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations. |
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1728 |
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