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Gershenzon, E. M., Gol'tsman, G. N., Karasik, B. S., Lugovaya, G. Y., Serebryakova, N. A., & Chinkova, E. V. (1992). Infrared radiation detectors on the base of electron heating in resistive state films from traditional superconducing materials. Sverkhprovodimost': Fizika, Khimiya, Tekhnika, 5(6), 1129–1140.
Abstract: Characteristics of infrared radiation detectors based on electron heating in thin superconducting films transformed at T ≤ Tc to a resistive state by transport current and, if necessary, by magnetic field are investigated. A comparison is made of the characteristics of the detectors fabricated of different materials: aluminium, niobium, Mo0.5Re0.5. Some devices with different topology of the reception area are considered. Electron heating detectors are comparable by their sensitivity with superconducting bolometers, but differ in a high fast-response.
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Gershenzon, E. M., Gol'tsman, G. N., Elant'ev, A. I., Karasik, B. S., & Potoskuev, S. E. (1988). Intense electromagnetic radiation heating of superconductor electrons in resistive state. Fizika Nizkikh Temperatur, 14(7), 753–763.
Abstract: An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model.
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Karasik, B. S., & Elantiev, A. I. (1995). Analysis of the noise performance of a hot-electron superconducting bolometer mixer. In Proc. 6th Int. Symp. Space Terahertz Technol. (pp. 229–246). Pasadena, Ca.
Abstract: A theoretical analysis for the noise temperature of hot–electron superconducting mixer has been presented. Thecontributions of both Johnson noise and electron temperature fluctuations have been evaluated. A set of criteriaensuring low noise performance of the mixer has been stated and a simple analytic expression for the noisetemperature of the mixer device has been suggested. It has been shown that an improvement of the mixer sensitivitydoes not necessarily follow by a decrease of the bandwidth. An SSB noise temperature limit due to the intrinsic noisemechanisms has been estimated to be as low as 40–90 K for a mixer device made from Nb or NbN thin film.Furthermore, the conversion gain bandwidth can be as wide as is allowed by the intrinsic electron temperaturerelaxation time if an appropriate choice of the mixer resistance has been made. The intrinsic mixer noise bandwidthis of 3 GHz for Nb device and of 5 GHz for NbN device. An additional improvement of the theory has been madewhen a distinction between the impedance measured at high intermediate frequency (larger than the mixerbandwidth) and the mixer ohmic resistance has been taken into account.Recently obtained experimental data on Nb and NbNbolometer mixer devices are viewed in connection with thetheoretical predictions.The noise temperature limit has also been specified for the mixer device where an outdiffusion coolingmechanism rather than the electron–phonon energy relaxation determines the mixer bandwidth. A consideration ofthe noise performance of a bolometer mixer made from YBaCuO film utilizing a hot–electron effect has been done.
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Burke, P. J., Schoelkopf, R. J., Prober, D. E., Skalare, A., Karasik, B. S., Gaidis, M. C., et al. (1998). Spectrum of thermal fluctuation noise in diffusion and phonon cooled hot-electron mixers. Appl. Phys. Lett., 72(12), 1516–1518.
Abstract: A systematic study of the intermediate frequency noise bandwidth of Nb thin-film superconducting hot-electron bolometers is presented. We have measured the spectrum of the output noise as well as the conversion efficiency over a very broad intermediate frequency range (from 0.1 to 7.5 GHz) for devices varying in length from 0.08 μm to 3 μm. Local oscillator and rf signals from 8 to 40 GHz were used. For a device of a given length, the spectrum of the output noise and the conversion efficiency behave similarly for intermediate frequencies less than the gain bandwidth, in accordance with a simple thermal model for both the mixing and thermal fluctuation noise. For higher intermediate frequencies the conversion efficiency decreases; in contrast, the noise decreases but has a second contribution which dominates at higher frequency. The noise bandwidth is larger than the gain bandwidth, and the mixer noise is low, between 120 and 530 K (double side band).
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Karasik, B. S., Zorin, M. A., Milostnaya, I. I., Elantev, A. I., Gol’tsman, G. N., & Gershenzon, E. M. (1995). Subnanosecond switching of YBaCuO films between superconducting and normal states induced by current pulse. J. Appl. Phys., 77(8), 4064–4070.
Abstract: A study is reported of the current switching in high‐quality YBaCuO films deposited onto NdGaO3 and ZrO2 substrates between superconducting (S) and normal (N) states. The films 60–120 nm thick prepared by laser ablation were structured into single strips between gold contacts. The time dependence of the resistance after application of the voltage step to the film was monitored. Experiment performed within certain ranges of voltage amplitudes and temperatures has shown the occurrence of the fast stage (shorter than 400 ps) both in S‐N and N‐S transitions. A fraction of the film resistance changing within this stage in the S‐N transition increases with the current amplitude. A subnanosecond N‐S stage becomes more pronounced for shorter pulses. The fast switching is followed by the much slower change of resistance. The mechanism of switching is discussed in terms of the hot‐electron phenomena in YBaCuO. The contributions of other thermal processes (e.g., a phonon escape from the film, a heat diffusion in the film and substrate, a resistive domain formation) in the subsequent stage of the resistance dynamic have been also discussed. The basic limiting characteristics (average dissipated power, energy needed for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.
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