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Author Title Year Publication Volume Pages
Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors 1983 Sov. Phys. Semicond. 17 908-913
Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. Kinetics of submillimeter impurity and exciton photoconduction in Ge 1982 Optics and Spectroscopy 52 454-455
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. Cross section for binding of free carriers into excitons in germanium 1981 JETP Lett. 33 574
Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. Population of excited-states of small admixtures in germanium 1978 Izv. Akad. Nauk SSSR, Seriya Fizicheskaya 42 1154-1159
Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. Intervalley cyclotron-impurity resonance of electrons in n-Ge 1976 JETP Lett. 24 125-128
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. Energy spectrum of free excitons in germanium 1973 JETP Lett. 18 93
Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. Germanium hot-electron narrow-band detector 1971 Sov. Radio Engineering And Electronic Physics 16 1346
Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions 1976 Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников 10 1379-1383
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. Absorption spectra in electron transitions between excited states of impurities in germanium 1975 JETP Lett. 22 95-97
Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields 1972 Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников 6 362-363