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Author Title Year Publication Volume Pages
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K 1996 JETP Lett. 64 404-409
Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M. Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films 1995 JETP 80 960-964
Aksaev, E. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures 1989 JETP Lett. 50 283-286
Gol’tsman, G. N.; Smirnov, K. V. Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures 2001 Jetp Lett. 74 474-479
Gol'tsman, G. N.; Gusinskii, E. N.; Malyavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.; Edel'shtein, V. M. The excitonic Zeeman effect in uniaxially-strained germanium 1987 Sov. Phys. JETP 65 1233-1241