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Author Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. url  openurl
  Title Observation of the free-exciton spectrum at submillimeter wavelengths Type Journal Article
  Year 1972 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 16 Issue 4 Pages 161-162  
  Keywords Ge, energy spectrum, free excitons  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1736  
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Author Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. url  openurl
  Title Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors Type Journal Article
  Year 1983 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.  
  Volume 17 Issue 8 Pages 908-913  
  Keywords BWO spectroscopy, pure semiconductors, residual impurities  
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  Notes Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках Approved no  
  Call Number Serial 1714  
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Author Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Heating of quasiparticles in a superconducting film in the resistive state Type Journal Article
  Year 1981 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 34 Issue 5 Pages 268-271  
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  Notes Approved no  
  Call Number Serial 1716  
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Author Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state Type Journal Article
  Year 1982 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 36 Issue 7 Pages 296-299  
  Keywords HEB  
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  Notes Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии Approved no  
  Call Number Serial 1717  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. url  openurl
  Title Cross section for binding of free carriers into excitons in germanium Type Journal Article
  Year 1981 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 33 Issue 11 Pages 574  
  Keywords Ge, excitons, photoconductivity  
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  Notes Approved no  
  Call Number Serial 1718  
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Author Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. url  openurl
  Title Carrier lifetime in excited states of shallow impurities in germanium Type Journal Article
  Year 1977 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 25 Issue 12 Pages 539-543  
  Keywords Ge, shallow impurities, excited states  
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  Notes Approved no  
  Call Number Serial 1726  
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Author Blagosklonskaya, L. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. url  openurl
  Title Effect of a high magnetic field on the spectrum of donors in InSb Type Journal Article
  Year 1977 Publication Fizika i Tekhnika Poluprovodnikov Abbreviated Journal Fizika i Tekhnika Poluprovodnikov  
  Volume 11 Issue 12 Pages 2373-2375  
  Keywords InSb, energy spectrum, donors, high magnetic field  
  Abstract (up)  
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  Language Russian Summary Language Original Title  
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  Notes Воздействие сильного магнитного поля на спектр доноров в InSb Approved no  
  Call Number Serial 1729  
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Author Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. url  openurl
  Title Energy spectrum of free excitons in germanium Type Journal Article
  Year 1973 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 18 Issue 3 Pages 93  
  Keywords Ge, free excitons, energy spectrum  
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  Notes Approved no  
  Call Number Serial 1734  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. url  openurl
  Title Binding energy of a carrier with a neutral impurity atom in germanium and in silicon Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue 5 Pages 185-186  
  Keywords Ge, Si, neutral impurity atom, binding energy  
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  Notes Approved no  
  Call Number Serial 1739  
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Author Gershenzon, E. M.; Gol'tsman, G. N. url  openurl
  Title Transitions of electrons between excited states of donors in germanium Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue 2 Pages 63-65  
  Keywords Ge, donors, excited states  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1740  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. url  openurl
  Title Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium Type Journal Article
  Year 1971 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 14 Issue 6 Pages 241  
  Keywords Ge, gamma irradiation, defects, impurities  
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  Notes Approved no  
  Call Number Serial 1742  
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Author Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Lecomte, B.; Dauplay, F.; Krieg, J. M.; Delorme, Y.; Feret, A.; Hübers, H. W.; Semenov, A. D.; Gol'tsman, G. N. url  doi
openurl 
  Title 2.5 THz multipixel heterodyne receiver based on NbN HEB mixers Type Conference Article
  Year 2006 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 6275 Issue Pages 62750I (1 to 11)  
  Keywords HEB, mixer, membrane  
  Abstract (up) A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5 µm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membranes (e.g. silicon-on-insulator) is under investigation.  
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  Notes Approved no  
  Call Number Serial 561  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Mirskii, G. I. url  openurl
  Title Submillimeter backward-wave-tube spectrometer-relaxometer Type Journal Article
  Year 1987 Publication Pribory i Tekhnika Eksperimenta Abbreviated Journal Pribory i Tekhnika Eksperimenta  
  Volume 30 Issue 4 Pages 131-137  
  Keywords BWO, applications  
  Abstract (up) A backward-wave-tube (BWT) spectrometer-relaxometer is described that is designed for study of the relaxation characteristics of photoconductors in the wavelength range of 2-0.25 mm – in particular, to measure the relaxation times of the submillimeter photoconductivity of germanium in the range of 10[sup:-4]-10[sup:-9] sec and to determine from these data the concentration of compensating impurities of from 10[sup:10] to 10[sup:14] cm[sup:-3]. The instrument uses the beats of the oscillations of two BWTs and records the amplitude-frequency response of the specimen with variation of the beat frequency from 10[sup:4] to 10[sup:8] Hz with accumulation of the desired signal for less than or equal to1 sec by means of a quadrature synchronous detector. The beat frequency is stabilized and the quadrature voltages of the synchronous detector are formed by means of phase-locked loops.  
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  Language Russian Summary Language Original Title  
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  Notes Approved no  
  Call Number Serial 1699  
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Author Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S. url  doi
openurl 
  Title 2.5 THz NbN hot electron mixer with integrated tapered slot antenna Type Journal Article
  Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 7 Issue 2 Pages 3548-3551  
  Keywords NbN HEB mixers  
  Abstract (up) A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.  
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  Series Volume Series Issue Edition  
  ISSN 1051-8223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1595  
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Author Cherednichenko, S.; Kroug, M.; Merkel, H.; Khosropanah, P.; Adam, A.; Kollberg, E.; Loudkov, D.; Gol'tsman, G.; Voronov, B.; Richter, H.; Huebers, H.-W. url  doi
openurl 
  Title 1.6 THz heterodyne receiver for the far infrared space telescope Type Journal Article
  Year 2002 Publication Phys. C: Supercond. Abbreviated Journal Phys. C: Supercond.  
  Volume 372-376 Issue Pages 427-431  
  Keywords NbN HEB mixers, applications  
  Abstract (up) A low noise heterodyne receiver is being developed for the terahertz range using a phonon-cooled hot-electron bolometric mixer based on 3.5 nm thick superconducting NbN film. In the 1–2 GHz intermediate frequency band the double-sideband receiver noise temperature was 450 K at 0.6 THz, 700 K at 1.6 THz and 1100 K at 2.5 THz. In the 3–8 GHz IF band the lowest receiver noise temperature was 700 K at 0.6 THz, 1500 K at 1.6 THz and 3000 K at 2.5 THz while it increased by a factor of 3 towards 8 GHz.  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4534 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1527  
Permanent link to this record
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