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Il'in, K. S.; Gol'tsman, G. N.; Voronov, B. M.; Sobolewski, Roman |
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Title |
Characterization of the electron energy relaxation process in NbN hot-electron devices |
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1999 |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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390-397 |
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HEB mixers, SSPD, SNSPD, NbN films, Nb films |
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We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth. |
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1576 |
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Semenov, A. D.; Gousev, Y. P.; Nebosis, R. S.; Renk, K. F.; Yagoubov, P.; Voronov, B. M.; Gol’tsman, G. N.; Syomash, V. D.; Gershenzon, E. M. |
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Title |
Heterodyne detection of THz radiation with a superconducting hot‐electron bolometer mixer |
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1996 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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69 |
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2 |
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260-262 |
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Keywords |
NbN HEB mixers |
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We report on the use of a superconducting hot‐electron bolometer mixer for heterodyne detection of terahertz radiation. Radiation with a wavelength of 119 μm was coupled to the mixer, a NbN microbridge, by a hybrid quasioptical antenna consisting of an extended hyperhemispherical lens and a planar logarithmic spiral antenna. We found, at an intermediate frequency of 1.5 GHz, a system double side band noise temperature of ≊40 000 K and conversion losses of 25 dB. We also discuss the possibilities of further improvement of the mixer performance. |
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0003-6951 |
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1610 |
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Semenov, A.; Richter, H.; Hübers, H.-W.; Petrenko, D.; Tretyakov, I.; Ryabchun, S.; Finkel, M.; Kaurova, N.; Gol’tsman, G.; Risacher, C.; Ricken, O.; Güsten, R. |
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Title |
Optimization of the intermediate frequency bandwidth in the THz HEB mixers |
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2014 |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 25th Int. Symp. Space Terahertz Technol. |
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54 |
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NbN HEB mixer |
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We report on the studies of the intermediate frequency (IF) bandwidth of quasi-optically coupled NbN hot-electron bolometer (HEB) mixers which are aimed at the optimization of the mixer performance at terahertz frequencies. Extension of the IF bandwidth due to the contribution of electron diffusion to the heat removal from NbN microbolometers has been already demonstrated for NbN HEBs at subterahertz frequencies. However, reducing the size of the microbolometer causes degradation of the noise temperature. Using in-situ multilayer manufacturing process we succeeded to improve the transparency of the contacts for electrons which go away from microbolometer to the metallic antenna. The improved transparency and hence coupling efficiency counterbalances the noise temperature degradation. HEB mixers were tested in a laboratory heterodyne receiver with a narrow-band cold filter which allowed us to eliminate direct detection. We used a local oscillator with a quantum cascade laser (QCL) at a frequency of 4.745 THz [1] which was developed for the H-Channel of the German Receiver for Astronomy at Terahertz frequencies (GREAT). Both the noise and gain bandwidth were measured in the IF range from 0.5 to 8 GHz using the hot-cold technique and preliminary calibrated IF analyzer with a tunable microwave filter. For optimized HEB geometry we found the noise bandwidth as large as 7 GHz. We compare our results with the conventional and the hot-spot mixer models and show that further extension of the IF bandwidth should be possible via improving the sharpness of the superconducting transition. The cross characterization of the HEB mixer was performed in the test bed of GREAT at the Max-Planck-Institut für Radioastronomie with the same QCL LO and delivered results which were consistent with the laboratory studies. |
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1359 |
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Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. |
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Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer |
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Journal Article |
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2019 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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32 |
Issue |
7 |
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075003 |
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NbN HEB mixer, GaN buffer layer, sapphire substrate |
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We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer. |
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IOP Publishing |
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Antipov_2019 |
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1277 |
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Hübers, Heinz-Wilhelm; Semenov, Alexei; Schubert, Josef; Gol'tsman, Gregory; Voronov, Boris; Gershenzon, Evgeni |
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Title |
Performance of the phonon-cooled hot-electron bolometric mixer between 0.7 THz and 5.2 THz |
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Conference Article |
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2000 |
Publication |
Proc. 8-th Int. Conf. on Terahertz Electronics |
Abbreviated Journal |
Proc. 8-th Int. Conf. on Terahertz Electronics |
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117-119 |
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NbN HEB mixers |
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We report on the phonon cooled NbN hot electron bolometer as mixer in the terahertz frequency range. Its hybrid antenna consists of a hyperhemispheric silicon lens and a logarithmic-spiral feed antenna. Noise temperatures have been measured between 0.7 THz and 5.2 THz. A quarter wavelength layer of Parylene works as antireflection coating for the silicon lens and reduces the noise temperature by about 30. It was found that the antenna pattern at 2.5 THz is determined by the feed antenna and not by the diameter of the lens. |
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Darmstadt, Germany |
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International Conference on Terahertz Electronics [8th], Held inDarmstadt, Germany on 28-29 September 2000 |
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1553 |
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Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A. |
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Title |
Electron energy relaxation in disordered superconducting NbN films |
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Journal Article |
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2020 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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Volume |
102 |
Issue |
5 |
Pages |
054501 (1 to 15) |
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NbN SSPD, SNSPD, HEB, bandwidth, relaxation time |
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We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe−ph∼Tn with the exponents n≈3.2–3.8. We found that in this temperature range τe−ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material. |
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2469-9950 |
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1266 |
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Pearlman, A.; Cross, A.; Slysz, W.; Zhang, J.; Verevkin, A.; Currie, M.; Korneev, A.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol’tsman, G.; Sobolewski, R. |
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Gigahertz counting rates of NbN single-photon detectors for quantum communications |
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2005 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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15 |
Issue |
2 |
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579-582 |
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NbN SSPD, SNSPD |
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We report on the GHz counting rate and jitter of our nanostructured superconducting single-photon detectors (SSPDs). The devices were patterned in 4-nm-thick and about 100-nm-wide NbN meander stripes and covered a 10-/spl mu/m/spl times/10-/spl mu/m area. We were able to count single photons at both the visible and infrared telecommunication wavelengths at rates of over 2 GHz with a timing jitter of below 18 ps. We also present the model for the origin of the SSPD switching dynamics and jitter, based on the time-delay effect in the phase-slip-center formation mechanism during the detector photoresponse process. With further improvements in our readout electronics, we expect that our SSPDs will reach counting rates of up to 10 GHz. An integrated quantum communications receiver based on two fiber-coupled SSPDs and operating at 1550-nm wavelength is also presented. |
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1558-2515 |
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1465 |
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Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
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Development of a silicon membrane-based multipixel hot electron bolometer receiver |
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Journal Article |
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2017 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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27 |
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4 |
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1-5 |
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Multi-pixel, NbN HEB, silicon-on-insulator, horn array |
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We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array. |
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1051-8223 |
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1324 |
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Ren, Y.; Zhang, D. X.; Zhou, K. M.; Miao, W.; Zhang, W.; Shi, S. C.; Seleznev, V.; Pentin, I.; Vakhtomin, Y.; Smirnov, K. |
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10.6 μm heterodyne receiver based on a superconducting hot-electron bolometer mixer and a quantum cascade laser |
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2019 |
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AIP Advances |
Abbreviated Journal |
AIP Advances |
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9 |
Issue |
7 |
Pages |
075307 |
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NbN HEB mixers, QCL, IR |
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We report on the development of a heterodyne receiver at mid-infrared wavelength for high-resolution spectroscopy applications. The receiver employs a superconducting NbN hot electron bolometer as a mixer and a room temperature distributed feedback quantum cascade laser operating at 10.6 μm (28.2 THz) as a local oscillator. The stabilization of the heterodyne receiver has been achieved using a feedback loop controlling the output power of the laser. Improved Allan variance times as well as a double sideband receiver noise temperature of 5000 K and a noise bandwidth of 2.8 GHz of the receiver system are demonstrated.
The work is supported in part by the National Key R&D Program of China under Grant 2018YFA0404701, by the CAS program under Grant QYZDJ-SSW-SLH043 and GJJSTD20180003, by the National Natural Science Foundation of China (NSFC) under Grant 11773083, by the “Hundred Talents Program” of the “Pioneer Initiative”, and in part by the CAS Key Lab for Radio Astronomy. |
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2158-3226 |
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1293 |
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Sclafani, M.; Marksteiner, M.; Keir, F. M. L.; Divochiy, A.; Korneev, A.; Semenov, A.; Gol'tsman, G.; Arndt, M. |
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Sensitivity of a superconducting nanowire detector for single ions at low energy |
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2012 |
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Nanotechnol. |
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Nanotechnol. |
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23 |
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6 |
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065501 (1 to 5) |
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NbN SSPD, SNSPD, superconducting single ion detector, SSID, SNSID |
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We report on the characterization of a superconducting nanowire detector for ions at low kinetic energies. We measure the absolute single-particle detection efficiency eta and trace its increase with energy up to eta = 100%. We discuss the influence of noble gas adsorbates on the cryogenic surface and analyze their relevance for the detection of slow massive particles. We apply a recent model for the hot-spot formation to the incidence of atomic ions at energies between 0.2 and 1 keV. We suggest how the differences observed for photons and atoms or molecules can be related to the surface condition of the detector and we propose that the restoration of proper surface conditions may open a new avenue for SSPD-based optical spectroscopy on molecules and nanoparticles. |
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Vienna Center for Quantum Science and Technology, Faculty of Physics, University of Vienna, Vienna, Austria |
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PMID:22248823 |
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1380 |
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Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E. |
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The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate |
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Conference Article |
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1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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290-302 |
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NbN HEB mixers, fabrication process |
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We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K. |
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Charlottesville, Virginia, USA |
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266 |
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Tretyakov, Ivan; Seliverstov, Sergey; Zolotov, Philipp; Kaurova, Natalya; Voronov, Boris; Finkel, Matvey; Goltsman, Gregory |
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Noise temperature and noise bandwidth of hot-electron bolometer mixer at 3.8 THz |
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2014 |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
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77 |
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NbN HEB mixer |
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We report on our recent results of double sideband (DSB) noise temperature and bandwidth measurements of quasi-optical hot electron bolometer (HEB) mixers at local oscillator frequency of 3.8 THz. The HEB mixers used in this work were made of a NbN thin film and had a superconducting transition temperature of about 10.3 K. To couple terahertz radiation, the NbN microbridge (0.2 μm long and 2 μm wide) was integrated with a planar logarithmic-spiral antenna. The mixer chip was glued to an elliptical Si lens clamped tightly to a mixer block mounted on the 4.2 K plate of a liquid helium cryostat. The terahertz radiation was fed into the HEB device through the cryostat window made of a 0.5 mm thick HDPE. A band-pass mesh filter was mounted on the 4.2 K plate to minimize the direct detection effect [1]. We used a gas discharge laser irradiating at 3.8 THz H 2 0 line as a local oscillator (LO). The LO power was combined with a black body broadband radiation via Mylar beam splitter. Our receiver allows heterodyne detection with an intermediate frequency (IF) of a several gigahertz which dictates usage of a wideband SiGe low noise amplifier [2]. The receiver IF output signal was further amplified at room temperature and fed into a square-law power detector through a band-pass filter. The DSB receiver noise temperature was measured using a conventional Y-factor technique at IF of 1.25 GHz and band of 40 MHz. Using wideband amplifiers at both cryogenic and room temperature stages we have estimated IF bandwidth of the HEB mixers used. The obtained results strengthen the position of the HEB mixer as one of the most important tools for submillimeter astronomy. This device operates well above the energy gap (at frequencies above 1 THz) where performance of state-of-the-art SIS mixers starts to degrade. So, HEB mixers are expected to be a device of choice in astrophysical observations (ground-, aircraft- and space-based) at THz frequencies due to its excellent noise performance and low LO power requirements. The HEB mixers will be in operation on Millimetron Space Observatory. References 1. J. J. A. Baselmans, A. Baryshev, S. F. Reker, M. Hajenius, J. R. Gao, T. M. Klapwijk, Yu. Vachtomin, S. Maslennikov, S. Antipov, B. Voronov, and G. Gol'tsman, Appl. Phys. Lett., 86, 163503 (2005). 2. Sander Weinreb, Life Fellow, IEEE, Joseph C. Bardin, Student Member, IEEE, and Hamdi Mani, “Design of Cryogenic SiGe Low-Noise Amplifiers”, IEEE Transactions on Microwave Theory and Techniques, 55, 11, 2007. |
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Milostnaya, I.; Korneev, A.; Rubtsova, I.; Seleznev, V.; Minaeva, O.; Chulkova, G.; Okunev, O.; Voronov, B.; Smirnov, K.; Gol'tsman, G.; Slysz, W.; Wegrzecki, M.; Guziewicz, M.; Bar, J.; Gorska, M.; Pearlman, A.; Kitaygorsky, J.; Cross, A.; Sobolewski, R. |
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Superconducting single-photon detectors designed for operation at 1.55-µm telecommunication wavelength |
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2006 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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43 |
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1334-1337 |
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NbN SSPD, SNSPD |
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We report on our progress in development of superconducting single-photon detectors (SSPDs), specifically designed for secure high-speed quantum communications. The SSPDs consist of NbN-based meander nanostructures and operate at liquid helium temperatures. In general, our devices are capable of GHz-rate photon counting in a spectral range from visible light to mid-infrared. The device jitter is 18 ps and dark counts can reach negligibly small levels. The quantum efficiency (QE) of our best SSPDs for visible-light photons approaches a saturation level of ~30-40%, which is limited by the NbN film absorption. For the infrared range (1.55µm), QE is ~6% at 4.2 K, but it can be significantly improved by reduction of the operation temperature to the 2-K level, when QE reaches ~20% for 1.55-µm photons. In order to further enhance the SSPD efficiency at the wavelength of 1.55 µm, we have integrated our detectors with optical cavities, aiming to increase the effective interaction of the photon with the superconducting meander and, therefore, increase the QE. A successful effort was made to fabricate an advanced SSPD structure with an optical microcavity optimized for absorption of 1.55 µm photons. The design consisted of a quarter-wave dielectric layer, combined with a metallic mirror. Early tests performed on relatively low-QE devices integrated with microcavities, showed that the QE value at the resonator maximum (1.55-µm wavelength) was of the factor 3-to-4 higher than that for a nonresonant SSPD. Independently, we have successfully coupled our SSPDs to single-mode optical fibers. The completed receivers, inserted into a liquid-helium transport dewar, reached ~1% system QE for 1.55 µm photons. The SSPD receivers that are fiber-coupled and, simultaneously, integrated with resonators are expected to be the ultimate photon counters for optical quantum communications. |
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Schubert, J.; Semenov, A.; Gol'tsman, G.; Hübers, H.-W.; Schwaab, G.; Voronov, B.; Gershenzon, E. |
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Noise temperature of an NbN hot-electron bolometric mixer at frequencies from 0.7 THz to 5.2 THz |
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1999 |
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Supercond. Sci. Technol. |
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12 |
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11 |
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748-750 |
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NbN HEB mixers |
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We report on noise temperature measurements of an NbN phonon-cooled hot-electron bolometric mixer in the terahertz frequency range. The devices were 3 nm thick films with in-plane dimensions 1.7 × 0.2 µm2 and 0.9 × 0.2 µm2 integrated in a complementary logarithmic-spiral antenna. Measurements were performed at seven frequencies ranging from 0.7 THz to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz), 5600 K (4.3 THz) and 8800 K (5.2 THz). |
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Schubert, J.; Semenov, A.; Gol'tsman, G.; Hübers, H.-W.; Schwaab, G.; Voronov, B.; Gershenzon, E. |
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Noise temperature and sensitivity of a NbN hot-electron mixer at frequencies from 0.7 THz to 5.2 THz |
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1999 |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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190-199 |
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NbN HEB mixers |
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We report on noise temperature measurements of a NbN phonon-cooled hot-electron bolometric mixer at different bias regimes. The device was a 3 nm thick bridge with in-plane dimensions of 1.7 x 0.2 gm 2 integrated in a complementary logarithmic spiral antenna. Measurements were performed at frequencies ranging from 0.7 THz up to 5.2 THz. The measured DSB noise temperatures are 1500 K (0.7 THz), 2200 K (1.4 THz), 2600 K (1.6 THz), 2900 K (2.5 THz), 4000 K (3.1 THz) 5600 K (4.3 THz) and 8800 K (5.2 THz). Two bias regimes are possible in order to achieve low noise temperatures. But only one of them yields sensitivity fluctuations close to the theoretical limit. |
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