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Meledin, D., Tong, C. Y. - E., Blundell, R., Kaurova, N., Smirnov, K., Voronov, B., et al. (2003). Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer. IEEE Trans. Appl. Supercond., 13(2), 164–167.
Abstract: In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions.
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Shurakov, A., Tong, C. -yu E., Grimes, P., Blundell, R., & Golt'sman, G. (2015). A microwave reflection readout scheme for hot electron bolometric direct detector. IEEE Trans. THz Sci. Technol., 5, 81–84.
Abstract: In this paper, we propose and present data from a fast THz detector based on the repurpose of hot electron bolometer mixers (HEB) fabricated from superconducting NbN thinfilm. This detector is essentially a traditional NbN bolometer element that operates under the influence of a microwave pump. The in-jected microwave power serves the dual purpose of enhancing the detector sensitivity and reading out the impedance changes of the device in response to incidentTHz radiation. We have measured an optical Noise Equivalent Power of 4 pW/ Hz for our detector at a bath temperature of 4.2 K. The measurement frequency was 0.83 THz and the modulation frequency was 1.48 kHz. The readout
scheme is versatile and facilitates both high-speed operation as well as multi-pixel applications.
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Shurakov, A., Mikhalev, P., Mikhailov, D., Mityashkin, V., Tretyakov, I., Kardakova, A., et al. (2018). Ti/Au/n-GaAs planar Schottky diode with a moderately Si-doped matching sublayer. Microelectronic Engineering, 195, 26–31.
Abstract: In this paper, we report on the results of the study of the Ti/Au/n-GaAs planar Schottky diodes (PSD) intended for the wideband detection of terahertz radiation. The two types of the PSD devices were compared having either the dual n/n+ silicon dopant profile or the triple one with a moderately doped matching sublayer inserted. All the diodes demonstrated no noticeable temperature dependence of ideality factors and barrier heights, whose values covered the ranges of 1.15–1.50 and 0.75–0.85 eV, respectively. We observed the lowering of the flat band barrier height of ∼80 meV after introducing the matching sublayer into the GaAs sandwich. For both the devices types, the series resistance value as low as 20 Ω was obtained. To extract the total parasitic capacitance, we performed the Y-parameters analysis within the electromagnetic modeling of the PSD's behavior via the finite-element method. The capacitance values of 12–12.2 fF were obtained and further verified by measuring the diodes' response voltages in the frequency range of 400–480 GHz. We also calculated the AC current density distribution within the layered structures similar to those being experimentally studied. It was demonstrated that insertion of the moderately Si-doped matching sublayer might be beneficial for implementation of a PSD intended for the operation within the ‘super-THz’ frequency range.
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Jiang, L., Zhang, W., Yao, Q. J., Lin, Z. H., Li, J., Shi, S. C., et al. (2005). Characterization of a quasi-optical NbN superconducting hot-electron bolometer mixer. In Proc. PIERS (Vol. 1, pp. 587–590).
Abstract: In this paper, we report the performance of a quasi-optical NbN superconducting HEB (hot electron bolome-ter) mixer measured at 500 GHz. The quasi-optical NbN superconducting HEB mixer is cryogenically cooled bya 4-K close-cycled refrigerator. Its receiver noise temperature and conversion gain are thoroughly investigatedfor different LO pumping levels and dc biases. The lowest receiver noise temperature is found to be approxi-mately 1200 K, and reduced to about 445 K after correcting theloss of the measurement system. The stabilityof the mixer’s IF output power is also demonstrated.
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Zhang, W., Jiang, L., Lin, Z. H., Yao, Q. J., Li, J., Shi, S. C., et al. (2005). Development of a quasi-optical NbN superconducting HEB mixer. In Proc. 16th Int. Symp. Space Terahertz Technol. (pp. 209–213).
Abstract: In this paper, we report the performance of a quasi-optical NbN superconducting HEB (hot electron bolometer) mixer measured at 500 and 850GHz. The quasi-optical NbN superconducting HEB mixer is cryogenically cooled by a 4-K close-cycled refrigerator. Measured receiver noise temperature at 850 and 500GHz are 3000K and 2500K respectively with wire grid as beamsplitter, while the lowest receiver noise temperature is found to be approximately 1200K with Mylar film. The theoretical receiver noise temperature (taking into account the elliptical polarization of log-spiral antenna) is consistent with measured one. The receiver noise temperature and conversion gain with 15-μm Mylar film as the beamsplitter at 500GHz are thoroughly investigated for different LO pumping levels and dc biases. The stability of the mixer’s IF output power is also demonstrated.
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