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Author |
Gol’tsman, G. N.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
High speed hot-electron superconducting bolometer |
Type |
Conference Article |
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Year |
1993 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
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Volume |
2104 |
Issue |
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Pages |
181-182 |
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Keywords |
NbN HEb, Nb, Al |
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Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
Physical limitation of response time of a superconducting bolometer as well as the nature of non-equilibrium detection of radiation have been investigated for Al, Nb and NbN thin films in spectral range from submillimeter to near-infraredwavelengths [1,2]. In the case of ideal heat removal from the film with the f_‘. 100A thickness the detection mechanism is an electron heating effect that is not selective to radiation wavelength in a very broad range. The response time ofan electron heating bolometer is determined by an electron-phonon interaction time. This time is of about 10 ns, 0.5 ns and 20 ps for Al, Nb, and NbN correspondingly near the critical temperature of the superconducting film. Thesensitive area of the bolometer consists of a number of narrow strips (with awidth of 1µm) connected in parallel to contact pads; these pads together witha sapphire substrate and a ground plate represent the microstrip transmissionline with an impedance of 50 Q. |
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SPIE |
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Birch, J.R.; Parker, T.J. |
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18th International Conference on Infrared and Millimeter Waves |
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no |
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Call Number |
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Serial |
1652 |
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Author |
Danerud, M.; Winkler, D.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N.; Lindgren, M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Picosecond detection of infrared radiation with YBa2Cu3O7-δ thin films |
Type |
Conference Article |
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Year |
1993 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
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Volume |
2104 |
Issue |
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Pages |
183-184 |
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Keywords |
YBCO HTS HEB detectors |
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Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
Picosecond nonequilibrium and slow bolometric responses from a patterned high-Tc superconducting (HTS) film due toinfrared radiation were investigated using both modulation and pulse techniques. Measurements at A, = 0.85 [tm andA, = 10.6 lim have shown a similar behaviour of the response vs modulation frequency f. The responsivity of the HTS filmbased detector at f ..- 0.6-1 GHz is estimated to be 10-2 – 10-1 V/W. |
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Spie |
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Editor |
Birch, J.R.; Parker, T.J. |
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18th International Conference on Infrared and Millimeter Waves |
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Notes |
https://inis.iaea.org/search/searchsinglerecord.aspx?recordsFor=SingleRecord&RN=25034664 |
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no |
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Call Number |
10.1117/12.2298489 |
Serial |
1653 |
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Author |
Zorin, M.; Lindgren, M.; Danerud, M.; Karasik, B.; Winkler, D.; Gol'tsman, G.; Gershenzon, E. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Nonequilibrium and bolometric responses of YBaCuO thin films to high-frequency modulated laser radiation |
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Journal Article |
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Year |
1995 |
Publication |
J. Supercond. |
Abbreviated Journal |
J. Supercond. |
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Volume |
8 |
Issue |
1 |
Pages |
11-15 |
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Keywords |
YBCO HTS HEB |
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Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
Picosecond nonequilibrium and slow bolometric responses to infrared radiation from a patterned high-T c superconducting (HTS) film in resistive and normal states deposited onto LaAlO3, NdGaO3, and MgO substrates were investigated using both pulse and modulation techniques. The response time of 35 ps to a laser pulse of 17 ps FWHM has been observed. The intrinsic response time of the fast process is expected to be about a few picoseconds. The modulation technique, being free from the disadvantages of pulse methods (poor sensitivity, limited dynamic range), makes the detailed study of a number of relaxation processes possible. Besides the nonequilibrium response, two kinds of bolometric processes, namely phonon transport through the film-substrate interface and phonon thermal diffusion in a substrate, manifest themselves in certain frequency dependences. |
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0896-1107 |
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no |
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1630 |
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Author |
Gol'tsman, G.; Maslennikov, S.; Finkel, M.; Antipov, S.; Kaurova, N.; Grishina, E.; Polyakov, S.; Vachtomin, Y.; Svechnikov, S.; Smirnov, K.; Voronov, B. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Nanostructured ultrathin NbN film as a terahertz hot-electron bolometer mixer |
Type |
Conference Article |
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Year |
2006 |
Publication |
Proc. MRS |
Abbreviated Journal |
Proc. MRS |
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Volume |
935 |
Issue |
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Pages |
210 (1 to 6) |
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Keywords |
NbN HEB mixers |
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Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
Planar spiral antenna coupled and directly lens coupled NbN HEB mixer structures are studied. An additional MgO buffer layer between the superconducting film and Si substrate is introduced. The buffer layer enables us to increase the gain bandwidth of a HEB mixer due to better acoustic transparency. The gain bandwidth is widened as NbN film thickness decreases and amounts to 5.2 GHz. The noise temperature of antenna coupled mixer is 1300 and 3100 K at 2.5 and 3.8 THz respectively. The structure and composition of NbN films is investigated by X-ray diffraction spectroscopy methods. Noise performance degradation at LO frequencies more than 3 THz is due to the use of a planar antenna and signal loss in contacts between the antenna and the sensitive NbN bridge. The mixer is reconfigured for operation at higher frequencies in a manner that receiver’s noise temperature is only 2300 K (3 times of quantum limit) at LO frequency of 30 THz. |
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0272-9172 |
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no |
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Serial |
1440 |
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Author |
Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Helicity-sensitive plasmonic terahertz interferometer |
Type |
Journal Article |
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Year |
2020 |
Publication |
Nano Lett. |
Abbreviated Journal |
Nano Lett. |
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Volume |
20 |
Issue |
10 |
Pages |
7296-7303 |
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Keywords |
graphene, plasmonic interferometer, radiation helicity, terahertz radiation |
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Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials. |
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Address |
CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland |
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1530-6984 |
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Notes |
PMID:32903004 |
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Call Number |
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1781 |
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