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Yagoubov, P.; Gol'tsman, G.; Voronov, B.; Svechnikov, S.; Cherednichenko, S.; Gershenzon, E.; Belitsky, V.; Ekström, H.; Semenov, A.; Gousev, Yu.; Renk, K. |
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Title |
Quasioptical phonon-cooled NbN hot-electron bolometer mixer at THz frequencies |
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1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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303-317 |
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NbN HEB mixers |
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In our experiments we tested phonon-cooled hot-electron bolometer (HEB) quasioptical mixer based on spiral antenna designed for 0.5-1.2 THz frequency band and fabricated on sapphire, Si-coated sapphire and high resistivity silicon substrates. HEB devices were produced from thin superconducting NbN film 3.5-6 nm thick with the critical temperature of about 11-12 K. For these devices we achieved the receiver noise temperature T R (DSB) = 3000 K in the 500-700 GHz frequency range and an IF bandwidth of 3-4 GHz. Prelimanary measurements at frequencies 1-1.2 THz resulted the receiver noise temperature about 9000 K (DSB). |
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1614 |
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Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Gol'tsman, G.; Svechnikov, S.; Gershenzon, E. |
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Title |
Noise temperature and local oscillator power requirement of NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies |
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1998 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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73 |
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19 |
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2814-2816 |
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NbN HEB mixers, noise temperature, local oscillator power |
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In this letter, the noise performance of NbN-based phonon-cooled hot electron bolometric quasioptical mixers is investigated in the 0.55–1.1 THz frequency range. The best results of the double-sideband <cd><2018>DSB<cd><2019> noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz, and 1250 K at 1.1 THz. The water vapor in the signal path causes significant contribution to the measured receiver noise temperature around 1.1 THz. The devices are made from 3-nm-thick NbN film on high-resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are typically 0.2Ï«2 um. The amount of local oscillator power absorbed in the bolometer is less than 100 nW. |
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911 |
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Merkel, H. F.; Yagoubov, P. A.; Kroug, M.; Khosropanah, P.; Kollberg, E. L.; Gol’tsman, G. N.; Gershenzon, E. M. |
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Noise temperature and absorbed LO power measurement methods for NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies |
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1998 |
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Proc. 28th European Microwave Conf. |
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Proc. 28th European Microwave Conf. |
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1 |
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294-299 |
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NbN HEB mixers |
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In this paper the absorbed LO power requirements and the noise performance of NbN based phonon-cooled hot electron bolometric (HEB) quasioptical mixers are investigated for RF frequencies in the 0.55-1.1 range The minimal measured DSB noise temperatures are about 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The increase in noise temperature at 1.1THz is attributed to water absorption. The absorbed LO power is measured using a calorimetric approach. The results are subsequently corrected for lattice heating. These values are compared to results of a novel one dimensional hot spot mixer models and to a more traditional isotherm method which tends to underestimate the absorbed LO power for small bias powers. Typically a LO power between 50nW and 100nW is needed to pump the device to the optimal operating point. |
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28th European Microwave Conference |
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1580 |
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Kooi, J. W.; Baselmans, J. J. A.; Baryshev, A.; Schieder, R.; Hajenius, M.; Gao, J.R.; Klapwijk, T. M.; Voronov, B.; Gol’tsman, G. |
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Title |
Stability of heterodyne terahertz receivers |
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2006 |
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J. Appl. Phys. |
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J. Appl. Phys. |
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100 |
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6 |
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064904 (1 to 9) |
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NbN HEB mixers |
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In this paper we discuss the stability of heterodyne terahertz receivers based on small volume NbN phonon cooled hot electron bolometers (HEBs). The stability of these receivers can be broken down in two parts: the intrinsic stability of the HEB mixer and the stability of the local oscillator (LO) signal injection scheme. Measurements show that the HEB mixer stability is limited by gain fluctuations with a 1∕f spectral distribution. In a 60MHz noise bandwidth this results in an Allan variance stability time of ∼0.3s. Measurement of the spectroscopic Allan variance between two intermediate frequency (IF) channels results in a much longer Allan variance stability time, i.e., 3s between a 2.5 and a 4.7GHz channel, and even longer for more closely spaced channels. This implies that the HEB mixer 1∕f noise is strongly correlated across the IF band and that the correlation gets stronger the closer the IF channels are spaced. In the second part of the paper we discuss atmospheric and mechanical system stability requirements on the LO-mixer cavity path length. We calculate the mixer output noise fluctuations as a result of small perturbations of the LO-mixer standing wave, and find very stringent mechanical and atmospheric tolerance requirements for receivers operating at terahertz frequencies. |
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0021-8979 |
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1444 |
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Jiang, L.; Antipov, S. V.; Voronov, B. M.; Gol'tsman, G. N.; Zhang, W.; Li, N.; Lin, Z. H.; Yao, Q. J.; Miao, W.; Shi, S. C.; Svechnikov, S. I.; Vakhtomin, Y. B. |
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Characterization of the performance of a quasi-optical NbN superconducting HEB mixer |
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2007 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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17 |
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2 |
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395-398 |
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NbN HEB mixers, noise temperature |
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In this paper we focus mainly on the investigation of the performance of a quasi-optical (planar log-spiral antenna) phonon-cooled NbN superconducting hot electron bolometer (HEB) mixer, which is cryogenically cooled by a close-cycled 4-K cryocooler, at 500 and 850 GHz frequency bands. The mixer's noise performance, stability of IF output power, and local oscillator (LO) power requirement are characterized for three NbN superconducting HEB devices of different sizes. The transmission characteristics of Mylar and Zitex films with incidence waves of an elliptical polarization are also examined by measuring the mixer's noise temperature. The lowest receiver noise temperatures (with no corrections) of 750 and 1100 K are measured at 500 and 850 GHz, respectively. Experimental results also demonstrate that the bigger the HEB device is, the higher the stability of IF output power becomes. |
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1051-8223 |
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1429 |
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