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Author Zhou, Y.D.; Becker, C. R.; Ashokan, R.; Selamet, Y.; Chang, Y.; Boreiko, R. T.; Betz, A. L.; Sivananthan, S. openurl 
  Title Progress in far-infrared detection technology Type Conference Article
  Year 2002 Publication Proc. SPIE Abbreviated Journal  
  Volume 4795 Issue Pages 121-128  
  Keywords HgCdTe/CdTe, detector  
  Abstract (up) II-VI intrinsic very long wavelength infrared (VLWIR, λc~20 to 50 μm) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Longshore, R. E.; Sivananthan, S. Series Title Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 471  
Permanent link to this record
 

 
Author Korneeva, Yuliya; Florya, Irina; Vdovichev, Sergey; Moshkova, Mariya; Simonov, Nikita; Kaurova, Natalia; Korneev, Alexander; Goltsman, Gregory doi  openurl
  Title Comparison of hot-spot formation in NbN and MoN thin superconducting films after photon absorption Type Conference Article
  Year 2017 Publication IEEE Transactions on Applied Superconductivity Abbreviated Journal IEEE Transactions on Applied Superconductiv  
  Volume 27 Issue 4 Pages 5  
  Keywords Thin film devices, Superconducitng photoncounting devices, Nanowire single-photon detectors  
  Abstract (up) In superconducting single-photon detectors SSPD

the efficiency of local suppression of superconductivity and hotspot

formation is controlled by diffusivity and electron-phonon

interaction time. Here we selected a material, 3.6-nm-thick MoNx

film, which features diffusivity close to those of NbN traditionally

used for SSPD fabrication, but with electron-phonon interaction

time an order of magnitude larger. In MoNx detectors we study

the dependence of detection efficiency on bias current, photon

energy, and strip width and compare it with NbN SSPD. We

observe non-linear current-energy dependence in MoNx SSPD

and more pronounced plateaus in dependences of detection

efficiency on bias current which we attribute to longer electronphonon

interaction time.
 
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ kovalyuk @ Serial 1114  
Permanent link to this record
 

 
Author Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. url  doi
openurl 
  Title Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector Type Journal Article
  Year 2020 Publication Nanomaterials (Basel) Abbreviated Journal Nanomaterials (Basel)  
  Volume 10 Issue 5 Pages 1-12  
  Keywords detector; quantum dots; short-wave infrared range; silicon  
  Abstract (up) In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.  
  Address Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 2079-4991 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:32365694; PMCID:PMC7712218 Approved no  
  Call Number Serial 1151  
Permanent link to this record
 

 
Author Goltsman, G. N. url  doi
openurl 
  Title Ultrafast nanowire superconducting single-photon detector with photon number resolving capability Type Conference Article
  Year 2009 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 7236 Issue Pages 72360D (1 to 11)  
  Keywords PNR NbN SSPD, SNSPD, superconducting single-photon detectors, photon number resolving detectors, ultrathin NbN films  
  Abstract (up) In this paper we present a review of the state-of-the-art superconducting single-photon detector (SSPD), its characterization and applications. We also present here the next step in the development of SSPD, i.e. photon-number resolving SSPD which simultaneously features GHz counting rate. We have demonstrated resolution up to 4 photons with quantum efficiency of 2.5% and 300 ps response pulse duration providing very short dead time.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Arakawa, Y.; Sasaki, M.; Sotobayashi, H.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1403  
Permanent link to this record
 

 
Author Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G. url  doi
openurl 
  Title Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector Type Conference Article
  Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1695 Issue Pages 012156  
  Keywords Shottky diode, THz, direct detector, multipixel camera  
  Abstract (up) In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1153  
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