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| Author | Tovpeko, N. A.; Trifonov, A. V.; Semenov, A. V.; Antipov, S. V.; Kaurova, N. S.; Titova, N. A.; Goltsman, G. N. | ||||
| Title | Bandwidth performance of a THz normal metal TiN bolometer-mixer | Type | Conference Article | ||
| Year | 2019 | Publication | Proc. 30th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 30th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 102-103 | ||
| Keywords | TiN normal metal bolometer, NMB | ||||
Abstract  |
We report on the bandwidth performance of the normal metal TiN bolometer-mixer on top of an Al 2 O 3 substrate, which is capable to operate in a wide range of bath temperatures from 77 K – 300 K. The choice of the combination TiN / Al 2 O 3 is related to an advanced heat transport between the film and the substrate in this pair and the sufficient temperature coefficient of resistance. The data were taken at 132.5 – 145.5 GHz with two BWOs as a signal and an LO source. Measurements were taken on TiN films of different thickness starting from 20 nm down to 5 nm coupled into a spiral Au antenna, which improves matching of incoming radiation with the thin TiN fim. Our experiments demonstrate effective heat coupling from a TiN thin film to an Al 2 O 3 substrate (111) boosting gain bandwidth (GB) of TiN bolometer up to 6 GHz for 5 nm thin film. Current results indicate weak temperature dependence of GB on the bath temperature of the TiN bolometer. Theoretical estimations of GB performance meet with experimental data for 5 nm thin TiN films. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1279 | |||
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| Author | Rath, P.; Vetter, A.; Kovalyuk, V.; Ferrari, S.; Kahl, O.; Nebel, C.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. | ||||
| Title | Travelling-wave single-photon detectors integrated with diamond photonic circuits: operation at visible and telecom wavelengths with a timing jitter down to 23 ps | Type | Conference Article | ||
| Year | 2016 | Publication | Integrated Optics: Devices, Mat. Technol. XX | Abbreviated Journal | Integrated Optics: Devices, Mat. Technol. XX |
| Volume | 9750 | Issue | Pages | 135-142 | |
| Keywords | SSPD, Superconducting Nanowire Single-Photon Detector, SNSPD, Single Photon Detector, Diamond Photonics, Diamond Integrated Optics, Diamond Waveguides, Integrated Optics, Low Timing Jitter | ||||
| Abstract |
We report on the design, fabrication and measurement of travelling-wave superconducting nanowire single-photon detectors (SNSPDs) integrated with polycrystalline diamond photonic circuits. We analyze their performance both in the near-infrared wavelength regime around 1600 nm and at 765 nm. Near-IR detection is important for compatibility with the telecommunication infrastructure, while operation in the visible wavelength range is relevant for compatibility with the emission line of silicon vacancy centers in diamond which can be used as efficient single-photon sources. Our detectors feature high critical currents (up to 31 μA) and high performance in terms of efficiency (up to 74% at 765 nm), noise-equivalent power (down to 4.4×10-19 W/Hz1/2 at 765 nm) and timing jitter (down to 23 ps). | ||||
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| Publisher | Spie | Place of Publication | Editor | Broquin, J.-E.; Conti, G.N. | |
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| Notes | Approved | no | |||
| Call Number | Serial | 1210 | |||
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| Author | Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. | ||||
| Title | The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts | Type | Conference Article | ||
| Year | 2018 | Publication | Materials Today: Proc. | Abbreviated Journal | Materials Today: Proc. |
| Volume | 5 | Issue | 13 | Pages | 27301-27306 |
| Keywords | graphene nanoribbons, graphene-nanoribbon, GNR FET, field effect transistor | ||||
| Abstract |
We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface. | ||||
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| ISSN | 2214-7853 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1316 | |||
| Permanent link to this record | |||||
| Author | Zubkova, E.; Golikov, A.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. | ||||
| Title | CWDM demultiplexer using anti-reflection, contra-directional couplers based on silicon nitride rib waveguide | Type | Conference Article | ||
| Year | 2019 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1410 | Issue | Pages | 012179 | |
| Keywords | coarse wavelength-division multiplexing, Si3N4 rib waveguide | ||||
| Abstract |
We report on the development and fabrication of a 9-channel coarse wavelength-division multiplexing for telecommunication wavelengths (1550 nm) using anti-reflection contra-directional couplers, based on silicon nitride (Si3N4) rib waveguide. The transmitted and reflected spectrum in each channel of the demultiplexer were measured. The average full width at half maximum of the transmitted (reflected) spectra is about 3 nm. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1183 | |||
| Permanent link to this record | |||||
| Author | Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. | ||||
| Title | Optimization of contra-directional coupler based on silicon nitride Bragg rib waveguide | Type | Conference Article | ||
| Year | 2018 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1124 | Issue | Pages | 051048 | |
| Keywords | Bragg waveguide, Si3N4 | ||||
| Abstract |
We report on the development and fabrication of a contra-directional coupler based on the Bragg waveguide on Si3N4 platform. Transmitted and reflected by the contra-directional coupler spectra were measured. The reflected spectra exactly matches the one notched by the main channel of the coupler. Losses are about 3dB, coupling to the directing branch of the coupler is practically lossless. FWHM of the transmitted (reflected) spectra is 3.46 nm. | ||||
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| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1195 | |||
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| Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
| Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 27 | Issue | 4 | Pages | 6 |
| Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
| Abstract |
We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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| Author | Smirnov, K.; Korneev, A.; Minaeva, O.; Divochiy, A.; Tarkhov, M.; Ryabchun, S.; Seleznev, V.; Kaurova, N.; Voronov, B.; Gol'tsman, G.; Polonsky, S. | ||||
| Title | Ultrathin NbN film superconducting single-photon detector array | Type | Conference Article | ||
| Year | 2007 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 61 | Issue | Pages | 1081-1085 | |
| Keywords | SSPD array | ||||
| Abstract |
We report on the fabrication process of the 2 × 2 superconducting single-photon detector (SSPD) array. The SSPD array is made from ultrathin NbN film and is operated at liquid helium temperatures. Each detector is a nanowire-based structure patterned by electron beam lithography process. The advances in fabrication technology allowed us to produce highly uniform strips and preserve superconducting properties of the unpatterned film. SSPD exhibit up to 30% quantum efficiency in near infrared and up to 1% at 5-μm wavelength. Due to 120 MHz counting rate and 18 ps jitter, the time-domain multiplexing read-out is proposed for large scale SSPD arrays. Single-pixel SSPD has already found a practical application in non-invasive testing of semiconductor very-large scale integrated circuits. The SSPD significantly outperformed traditional single-photon counting avalanche diodes. | ||||
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| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 408 | |||
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| Author | Hübers, Heinz-Wilhelm; Semenov, Alexei; Schubert, Josef; Gol'tsman, Gregory; Voronov, Boris; Gershenzon, Evgeni | ||||
| Title | Performance of the phonon-cooled hot-electron bolometric mixer between 0.7 THz and 5.2 THz | Type | Conference Article | ||
| Year | 2000 | Publication | Proc. 8-th Int. Conf. on Terahertz Electronics | Abbreviated Journal | Proc. 8-th Int. Conf. on Terahertz Electronics |
| Volume | Issue | Pages | 117-119 | ||
| Keywords | NbN HEB mixers | ||||
| Abstract |
We report on the phonon cooled NbN hot electron bolometer as mixer in the terahertz frequency range. Its hybrid antenna consists of a hyperhemispheric silicon lens and a logarithmic-spiral feed antenna. Noise temperatures have been measured between 0.7 THz and 5.2 THz. A quarter wavelength layer of Parylene works as antireflection coating for the silicon lens and reduces the noise temperature by about 30. It was found that the antenna pattern at 2.5 THz is determined by the feed antenna and not by the diameter of the lens. | ||||
| Address | Darmstadt, Germany | ||||
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| Area | Expedition | Conference | International Conference on Terahertz Electronics [8th], Held inDarmstadt, Germany on 28-29 September 2000 | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1553 | |||
| Permanent link to this record | |||||
| Author | Semenov, A.; Richter, H.; Hübers, H.-W.; Petrenko, D.; Tretyakov, I.; Ryabchun, S.; Finkel, M.; Kaurova, N.; Gol’tsman, G.; Risacher, C.; Ricken, O.; Güsten, R. | ||||
| Title | Optimization of the intermediate frequency bandwidth in the THz HEB mixers | Type | Abstract | ||
| Year | 2014 | Publication | Proc. 25th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 25th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 54 | ||
| Keywords | NbN HEB mixer | ||||
| Abstract |
We report on the studies of the intermediate frequency (IF) bandwidth of quasi-optically coupled NbN hot-electron bolometer (HEB) mixers which are aimed at the optimization of the mixer performance at terahertz frequencies. Extension of the IF bandwidth due to the contribution of electron diffusion to the heat removal from NbN microbolometers has been already demonstrated for NbN HEBs at subterahertz frequencies. However, reducing the size of the microbolometer causes degradation of the noise temperature. Using in-situ multilayer manufacturing process we succeeded to improve the transparency of the contacts for electrons which go away from microbolometer to the metallic antenna. The improved transparency and hence coupling efficiency counterbalances the noise temperature degradation. HEB mixers were tested in a laboratory heterodyne receiver with a narrow-band cold filter which allowed us to eliminate direct detection. We used a local oscillator with a quantum cascade laser (QCL) at a frequency of 4.745 THz [1] which was developed for the H-Channel of the German Receiver for Astronomy at Terahertz frequencies (GREAT). Both the noise and gain bandwidth were measured in the IF range from 0.5 to 8 GHz using the hot-cold technique and preliminary calibrated IF analyzer with a tunable microwave filter. For optimized HEB geometry we found the noise bandwidth as large as 7 GHz. We compare our results with the conventional and the hot-spot mixer models and show that further extension of the IF bandwidth should be possible via improving the sharpness of the superconducting transition. The cross characterization of the HEB mixer was performed in the test bed of GREAT at the Max-Planck-Institut für Radioastronomie with the same QCL LO and delivered results which were consistent with the laboratory studies. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1359 | |||
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| Author | Il'in, K. S.; Gol'tsman, G. N.; Voronov, B. M.; Sobolewski, Roman | ||||
| Title | Characterization of the electron energy relaxation process in NbN hot-electron devices | Type | Conference Article | ||
| Year | 1999 | Publication | Proc. 10th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 10th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 390-397 | ||
| Keywords | HEB mixers, SSPD, SNSPD, NbN films, Nb films | ||||
| Abstract |
We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1576 | |||
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