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Author Goltsman, G.
Title Quantum-photonic integrated circuits Type Conference Article
Year 2019 Publication Proc. IWQO Abbreviated Journal Proc. IWQO
Volume Issue Pages 22-23
Keywords WSSPD, waveguide SSPD, SNSPD, quantum optics, integrated optics, superconducting nanowire single-photon detector
Abstract (up) We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also.
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Notes Approved no
Call Number Serial 1287
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Author Goltsman, G.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R.
Title Quantum photonic integrated circuits with waveguide integrated superconducting nanowire single-photon detectors Type Conference Article
Year 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.
Volume 190 Issue Pages 02004 (1 to 2)
Keywords waveguide SSPD, SNSPD
Abstract (up) We show the design, a history of development as well as the most successful and promising approaches for QPICs realization based on hybrid nanophotonic-superconducting devices, where one of the key elements of such a circuit is a waveguide integrated superconducting single-photon detector (WSSPD). The potential of integration with fluorescent molecules is discussed also.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2100-014X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1320
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Author Beck, M.; Klammer, M.; Rousseau, I.; Gol’tsman, G. N.; Diamant, I.; Dagan, Y.; Demsar, J.
Title Probing superconducting gap dynamics with THz pulses Type Conference Article
Year 2015 Publication CLEO Abbreviated Journal CLEO
Volume Issue Pages SM3H.3 (1 to 2)
Keywords superconducting gap; electric fields; femtosecond pulses; near infrared radiation; picosecond pulses; superconductors; thin films
Abstract (up) We studied superconducting gap dynamics in a BCS superconductor NbN and electron doped cuprate superconductor PCCO following excitation with near-infrared (NIR) and narrow band THz pulses. Systematic studies on PCCO imply very selective electron-phonon coupling.
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Publisher Optical Society of America Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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Notes Approved no
Call Number Serial 1345
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Author Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte 2, P. A. J.; Voronov, B.; Gol’tsman, G.
Title Increased bandwidth of NbN phonon cooled hot electron bolometer mixers Type Conference Article
Year 2004 Publication Proc. 15th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 15th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 381-386
Keywords NbN HEB mixers, IF bandwidth
Abstract (up) We study experimentally the IF gain bandwidth of NbN phonon-cooled hot-electron-bolometer (HEB) mixers for a set of devices with different contact structures but an identical NbN film. We observe that the IF bandwidth depends strongly on the exact contact structure and find an IF gain bandwidth of 6 GHz for a device with an additional superconducting layer (NbTiN) in between the active NbN film and the gold contact to the antenna. These results contradict the common opinion that the IF bandwidth is determined by the phonon-escape time between the NbN film and the substrate. Hence we calculate the IF gain bandwidth of a superconducting film using a two-temperature model. We find that the bandwidth increases strongly with operating temperature and is not limited by the phonon escape time. This is because of strong temperature dependence of the phonon specific heat in the NbN film.
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Notes Approved no
Call Number Serial 1494
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Author Kuznetsov, K. A.; Kornienko, V. V.; Vakhtomin, Y. B.; Pentin, I. V.; Smirnov, K. V.; Kitaeva, G. K.
Title Generation and detection of optical-terahertz biphotons via spontaneous parametric downconversion Type Conference Article
Year 2018 Publication Proc. ICLO Abbreviated Journal Proc. ICLO
Volume Issue Pages 303
Keywords NbN HEB applications
Abstract (up) We study spontaneous parametric downconversion (SPDC) in the strongly non-degenerate regime when the idler wave hits the terahertz range. By using the hot-electron bolometer, for the first time the SPDC-generated idler-wave photons were directly detected in the terahertz frequency range. Spectrum of corresponding signal photons was measured using standard technique by the CCD camera. Possible applications of correlated optical-terahertz biphotons are discussed.
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Series Editor Series Title Abbreviated Series Title
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Area Expedition Conference International Conference Laser Optics
Notes Approved no
Call Number Serial 1806
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Author Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Baryshev, A.; Kooi, J.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol’tsman, G.
Title Hot electron bolometer mixers with improved interfaces: sensitivity, LO power and stability Type Conference Article
Year 2004 Publication Proc. 15th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 15th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 17-24
Keywords NbN HEB mixers
Abstract (up) We study twin slot antenna coupled NbN hot electron bolometer mixers with an improved contact structure and a small volume, ranging from 1 µm × 0.1 µm to 2 × 0.3 µm. We obtain a DSB receiver noise temperature of 900 K at 1.6 THz and 940 K at 1.9 THz. To explore the practical usability of such small HEB mixers we evaluate the LO power requirement, the sensitivity and the stability. We find that the LO power requirement of the smallest mixers is reduced to about 240 nW at the Si lens of the mixer. This value is larger than expected from the isothermal technique and the known losses in the lens by a factor of 3-3.5. The stability of these receivers is characterized using a measurement of the Allan Variance. We find an Allan time of 0.5 sec. in an 80 MHz bandwidth. A small increase in stability can be reached by using a higher bias at the expense of a significant amount of sensitivity. The stability is sufficient for spectroscopic applications in a 1 MHz bandwidth at a 1 Hz chopping frequency.
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Notes Approved no
Call Number Serial 1491
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Author Zolotov, P.; Divochiy, A.; Vakhtomin, Y.; Moshkova, M.; Morozov, P.; Seleznev, V.; Smirnov, K.
Title Photon-number-resolving SSPDs with system detection efficiency over 50% at telecom range Type Conference Article
Year 2018 Publication Proc. AIP Conf. Abbreviated Journal
Volume 1936 Issue 1 Pages 020019
Keywords NbN PNR SSPD, SNSPD
Abstract (up) We used technology of making high-efficiency superconducting single-photon detectors as a basis for improvement of photon-number-resolving devices. By adding optical cavity and using an improved NbN superconducting film, we enhanced previously reported system detection efficiency at telecom range for such detectors. Our results show that implementation of optical cavity helps to develop four-section device with quantum efficiency over 50% at 1.55 µm. Performed experimental studies of detecting multi-photon optical pulses showed irregularities over defining multi-photon through single-photon quantum efficiency.
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Notes Approved no
Call Number doi:10.1063/1.5025457 Serial 1231
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Author Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Lobanov, Y.; Shcherbatenko, M.; Korneev, A.; Pernice, W.; Goltsman, G.
Title Waveguide integrated superconducting single-photon detector for on-chip quantum and spectral photonic application Type Conference Article
Year 2017 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 917 Issue Pages 062032
Keywords SSPD, SNSPD, waveguide
Abstract (up) With use of the travelling-wave geometry approach, integrated superconductor- nanophotonic devices based on silicon nitride nanophotonic waveguide with a superconducting NbN-nanowire suited on top of the waveguide were fabricated. NbN-nanowire was operated as a single-photon counting detector with up to 92 % on-chip detection efficiency in the coherent mode, serving as a highly sensitive IR heterodyne mixer with spectral resolution (f/df) greater than 106 in C-band at 1550 nm wavelength
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Notes Approved no
Call Number RPLAB @ kovalyuk @ Serial 1140
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Author Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V.
Title Influence of deposited material energy on superconducting properties of the WSi films Type Conference Article
Year 2020 Publication IOP Conf. Ser.: Mater. Sci. Eng. Abbreviated Journal IOP Conf. Ser.: Mater. Sci. Eng.
Volume 781 Issue Pages 012013 (1 to 6)
Keywords WSi SSPD, SNSPD
Abstract (up) WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1757-899X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1798
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Author Гольцман, Г. Н.; Веревкин, А. А.; Гершензон, Е. М.; Птицина, Н. Г.; Смирнов, К. В.; Чулкова, Г. М.
Title Исследования процессов неупругой релаксации и примесная спектроскопия-релаксометрия в двумерном электронном газе в полупроводниковых структурах с квантовыми ямами Type Report
Year 1995 Publication Abbreviated Journal
Volume Issue Pages
Keywords
Abstract (up) В гетероструктурах GaAs/AlGaAs впервые прямым методом измерена температурная зависимость вpемени энеpгетической pелаксации двумерного электронного газа te(T) в широком диапазоне температур Т=1,5 – 50 К в квазиравновесных условиях. Для измерений использовался высокочувствительный спектрометр миллиметрового диапазона волн с высоким временным разрешением, который позволял измерять релаксационные времена до 150 пс с погрешностью не более 20%. Верхний предел температуры определялся временным разрешением спектрометра. Исследования проводились на высококачественных образцах с поверхностной концентрацией носителей ns = 4,2 1011 см-2 и подвижностью m = 7 105 см2В-1с-1 (при Т = 4,2К). В квазиравновесных условиях из температурной зависимости tе определен предел подвижности при низких температурах (T<4.2 K), связанный с рассеянием на пьезоакустическом потенциале, получено время неупругой релаксации, связанное с рассеянием на деформационном потенциале (15 K25 K), получено характерное время испускания оптического фонона (tLO>4,5пс), которое существенно превышает время сронтанного излучения оптического фонона (примерно в 30 раз), что связано с большой ролью процессов перепоглащения фононов электронами.При низких температурах проведены измерения tе в условиях сильного разогрева. Полученные значения tе и зависимость tе от температуры электронов Те совпадают с tе(Т) в квазиравновесных условиях при Т=Те. Из полученных значений tе(Те) построена зависимость мощности энергетических потерь от Те, которая хорошо согласуется с литературными данными.Начаты измерения в магнитном поле, которые показывают переспективность использованного нами метода измерений как в области слабых магнитных полей при факторе заполнения >10, так и в области сильных магнитных полей при факторе заполнения >1-2.
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Notes Отчет о НИР/НИОКР; РФФИ: 95-02-06409-а; Approved no
Call Number Serial 1831
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