Gershenzon, E. M., Il'in, V. A., Litvak-Gorskaya, L. B., & Filonovich, S. R. (1979). Character of submillimeter photoconductivity in n-lnSb. Sov. Phys. JETP, 49(1), 121–128.
Abstract: A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8).
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Shor, P. W. (2009). Quantum information theory: The bits don't add up. Nat. Phys., 5, 247–248.
Abstract: A counterexample to the 'additivity question', the most celebrated open problem in the mathematical theory of quantum information, casts doubt on the possibility of finding a simple expression for the information capacity of a quantum channel.
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Tang, L., Kocabas, S. E., Latif, S., Okyay, A. K., Ly-Gagnon, D. - S., Saraswat, K. C., et al. (2008). Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna. Nature Photonics, 2, 226–229.
Abstract: A critical challenge for the convergence of optics and electronics is that the micrometre scale of optics is significantly larger than the nanometre scale of modern electronic devices. In the conversion from photons to electrons by photodetectors, this size incompatibility often leads to substantial penalties in power dissipation, area, latency and noise. A photodetector can be made smaller by using a subwavelength active region; however, this can result in very low responsivity because of the diffraction limit of the light. Here we exploit the idea of a half-wave Hertz dipole antenna (length approx 380 nm) from radio waves, but at near-infrared wavelengths (length approx 1.3 microm), to concentrate radiation into a nanometre-scale germanium photodetector. This gives a polarization contrast of a factor of 20 in the resulting photocurrent in the subwavelength germanium element, which has an active volume of 0.00072 microm3, a size that is two orders of magnitude smaller than previously demonstrated detectors at such wavelengths.
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Khosropanah, P., Merkel, H., Yngvesson, S., Adam, A., Cherednichenko, S., & Kollberg, E. (2000). A distributed device model for phonon-cooled HEB mixers predicting IV characteristics, gain, noise and IF bandwidth. In Proc. 11th Int. Symp. Space Terahertz Technol. (pp. 474–488). University of Michigan, Ann Arbor, MI USA.
Abstract: A distributed model for phonon-cooled superconductor hot electron bolometer (HEB) mixers is given, which is based on solving the one-dimensional heat balance equation for the electron temperature profile along the superconductor strip. In this model it is assumed that the LO power is absorbed uniformly along the bridge but the DC power absorption depends on the local resistivity and is thus not uniform. The electron temperature dependence of the resistivity is assumed to be continuous and has a Fermi form. These assumptions are used in setting up the non-linear heat balance equation, which is solved numerically for the electron temperature profile along the bolometer strip. Based on this profile the resistance of the device and the IV curves are calculated. The IV curves are in excellent agreement with measurement results. Using a small signal model the conversion gain of the mixer is obtained. The expressions for Johnson noise and thermal fluctuation noise are derived. The calculated results are in close agreement with measurements, provided that one of the parameters used is adjusted.
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Finkel, M., Thierschmann, H. R., Galatro, L., Katan, A. J., Thoen, D. J., de Visser, P. J., et al. (2016). Branchline and directional THz coupler based on PECVD SiNx-technology. In 41st IRMMW-THz.
Abstract: A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope.
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