| |
Records |
Links |
|
Author |
Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
|
| |
Title |
Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
Type |
Journal Article |
| |
Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
|
|
| |
Volume |
9 |
Issue |
2 |
Pages |
3216-3219 |
|
| |
Keywords |
RSFQ, NbN, SIS |
|
| |
Abstract  |
A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches). |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1081 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Schwarz, Brent |
|
| |
Title |
Lidar: Mapping the world in 3D |
Type |
Journal Article |
| |
Year |
2010 |
Publication |
Nature Photonics |
Abbreviated Journal |
Nat. Photon. |
|
| |
Volume |
4 |
Issue |
7 |
Pages |
429-430 |
|
| |
Keywords |
LIDAR |
|
| |
Abstract |
A high-definition LIDAR system with a rotating sensor head containing 64 semiconductor lasers allows the efficient generation of 3D environment maps at unprecedented levels of detail. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
RPLAB @ gujma @ |
Serial |
696 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S. |
|
| |
Title |
2.5 THz NbN hot electron mixer with integrated tapered slot antenna |
Type |
Journal Article |
| |
Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
|
| |
Volume |
7 |
Issue |
2 |
Pages |
3548-3551 |
|
| |
Keywords |
NbN HEB mixers |
|
| |
Abstract |
A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
1051-8223 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1595 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Cherednichenko, S.; Kroug, M.; Merkel, H.; Khosropanah, P.; Adam, A.; Kollberg, E.; Loudkov, D.; Gol'tsman, G.; Voronov, B.; Richter, H.; Huebers, H.-W. |
|
| |
Title |
1.6 THz heterodyne receiver for the far infrared space telescope |
Type |
Journal Article |
| |
Year |
2002 |
Publication |
Phys. C: Supercond. |
Abbreviated Journal |
Phys. C: Supercond. |
|
| |
Volume |
372-376 |
Issue |
|
Pages |
427-431 |
|
| |
Keywords |
NbN HEB mixers, applications |
|
| |
Abstract |
A low noise heterodyne receiver is being developed for the terahertz range using a phonon-cooled hot-electron bolometric mixer based on 3.5 nm thick superconducting NbN film. In the 1–2 GHz intermediate frequency band the double-sideband receiver noise temperature was 450 K at 0.6 THz, 700 K at 1.6 THz and 1100 K at 2.5 THz. In the 3–8 GHz IF band the lowest receiver noise temperature was 700 K at 0.6 THz, 1500 K at 1.6 THz and 3000 K at 2.5 THz while it increased by a factor of 3 towards 8 GHz. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0921-4534 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1527 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. |
|
| |
Title |
On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data |
Type |
Journal Article |
| |
Year |
1996 |
Publication |
J. of Communications Technology and Electronics |
Abbreviated Journal |
J. of Communications Technology and Electronics |
|
| |
Volume |
41 |
Issue |
5 |
Pages |
408-414 |
|
| |
Keywords |
submillimeter waves, transmission |
|
| |
Abstract |
A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
1064-2269 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
Радиотехника и электроника 41, no. 4 (1996): 441-447 |
Approved |
no |
|
| |
Call Number |
|
Serial |
1611 |
|
| Permanent link to this record |
