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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Karasik, B. S.; Potoskuev, S. E. |
Title |
Intense electromagnetic radiation heating of superconductor electrons in resistive state |
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Journal Article |
Year |
1988 |
Publication |
Fizika Nizkikh Temperatur |
Abbreviated Journal |
Fizika Nizkikh Temperatur |
Volume |
14 |
Issue |
7 |
Pages |
753-763 |
Keywords |
Nb HEB |
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An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model. |
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1697 |
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Cherednichenko, S.; Kroug, M.; Yagoubov, P.; Merkel, H.; Kollberg, E.; Yngvesson, K. S.; Voronov, B.; Gol’tsman, G. |
Title |
IF bandwidth of phonon cooled HEB mixers made from NbN films on MgO substrates |
Type |
Conference Article |
Year |
2000 |
Publication |
Proc. 11th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 11th Int. Symp. Space Terahertz Technol. |
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Pages |
219-227 |
Keywords |
NbN HEB mixers, cinversion gain bandwidth, IF bandwidth |
Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
An investigation of gain and noise bandwidth of phonon-cooled hot-electron bolometric (HEB) mixers is presented. The radiation coupling to the mixers is quasioptical through either a spiral or twin-slot antenna. A maximum gain bandwidth of 4.8 GHz is obtained for mixers based on a 3.5 nm thin NbN film with Tc= 10 K. The noise bandwidth is 5.6 GHz, at the moment limited by parasitic elements in the, device mount fixture. At 0.65 THz the DSB receiver noise temperature is 700-800 К in the IF band 1-2 GHz, and 1150-2700 К in the band 3.5-7 GHz. |
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1557 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Title |
Population and lifetime of excited states of shallow impurities in Ge |
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Journal Article |
Year |
1979 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
49 |
Issue |
2 |
Pages |
355-362 |
Keywords |
Ge, photothermal ionization, shallow impurities |
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An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed. |
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1719 |
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Author |
Barreiro, Julio T. |
Title |
Quantum physics: Environmental effects controlled |
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Journal Article |
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2011 |
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Nature Physics |
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Nat. Phys. |
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7 |
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927–928 |
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fromIPMRAS |
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An open quantum system loses its 'quantumness' when information about the state leaks into its surroundings. Researchers now show how this decoherence can be controlled between two incompatible regimes in the case of a single photon. |
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RPLAB @ gujma @ |
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817 |
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Gousev, Yu. P.; Gol'tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.; Nebosis, R. S.; Heusinger, M. A.; Renk, K. F. |
Title |
Broadband ultrafast superconducting NbN detector for electromagnetic radiation |
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Journal Article |
Year |
1994 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
Volume |
75 |
Issue |
7 |
Pages |
3695-3697 |
Keywords |
NbN HEB |
Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
An ultrafast detector that is sensitive to radiation in a broad spectral range from submillimeter waves to visible light is reported. It consists of a structured NbN thin film cooled to a temperature below Tc (∼11 K). Using 20 ps pulses of a GaAs laser, we observed signal pulses with both rise and decay time of about 50 ps. From the analysis of a mixing experiment with submillimeter radiation we estimate an intrinsic response time of the detector of ∼12 ps. The sensitivity was found to be similar for the near‐infrared and submillimeter radiation. Broadband sensitivity and short response time are attributed to a quasiparticle heating effect. |
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252 |
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