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Author | Elmanova, A.; An, P.; Kovalyuk, V.; Golikov, A.; Elmanov, I.; Goltsman, G. | ||||
Title | Study of silicon nitride O-ring resonator for gas-sensing applications | Type | Conference Article | ||
Year | 2020 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
Volume | 1695 | Issue | Pages | 012124 | |
Keywords | silicon nitride O-ring resonator, ORR | ||||
Abstract | In this work, we experimentally studied the influence of different gaseous surroundings on silicon nitride O-ring resonator transmission. We compared the obtained results with numerical calculations and theoretical analysis and found a good agreement between them. Our results have a great potential for gas sensing applications, where a compact footprint and high efficiency are desired simultaneously. | ||||
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ISSN | 1742-6588 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1176 | |||
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Author | Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. | ||||
Title | Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon | Type | Journal Article | ||
Year | 2001 | Publication | Jetp Lett. | Abbreviated Journal | Jetp Lett. |
Volume | 73 | Issue | 1 | Pages | 44-47 |
Keywords | uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field | ||||
Abstract | The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap. | ||||
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ISSN | 0021-3640 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1752 | |||
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Author | Trifonov, Andrey; Tong, C. Edward; Lobanov, Yury; Kaurova, Natalia; Blundell, Raymond; Gol’tsman, Gregory | ||||
Title | An investigation of the DC and IF performance of silicon-membrane HEB mixer elements | Type | Conference Article | ||
Year | 2015 | Publication | Proc. 26th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 26th Int. Symp. Space Terahertz Technol. |
Volume | Issue | Pages | 40 | ||
Keywords | silicon-membrane HEB waveguide mixer | ||||
Abstract | We report on our initial development towards a 2x2 multi-pixel HEB waveguide mixer for operation at 1.4 THz. We have successfully fabricated devices comprising an NbN bridge integrated with antenna test structure using a silicon membrane as the supporting substrate. DC measurements of the test chips demonstrate critical current from 0.1 – 1mA depending on the size of device, with T c of around 10 K and ΔTc ~ 0.8 K. | ||||
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Notes | Approved | no | |||
Call Number | Serial | 1160 | |||
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Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 27 | Issue | 4 | Pages | 6 |
Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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Notes | Approved | no | |||
Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
Title | Development of a silicon membrane-based multipixel hot electron bolometer receiver | Type | Journal Article | ||
Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 27 | Issue | 4 | Pages | 1-5 |
Keywords | Multi-pixel, NbN HEB, silicon-on-insulator, horn array | ||||
Abstract | We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array. | ||||
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Series Volume | Series Issue | Edition | |||
ISSN | 1051-8223 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1324 | |||
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