Dzardanov, A., Ekstrom, H., Gershenzon, E., Gol'tsman, G., Jacobsson, S., Karasik, B., et al. (1994). Hot-electron superconducting mixers for 20-500 GHz operation. In Proc. Int. Conf. on Millimeter and Submillimeter Waves and Appl. (Vol. 2250, pp. 276–278).
Abstract: Bolometdcmucers based on Nb and NbN superconducting thin films in the resistive state have been prepared for 20, 100 GHz and 350-500 GHz operation. The mixing mechanism is presumably of electron heating origin. Our measurements indicate that a conversion loss of about 6-8 dB can rather easily be achieved, and that the noise is reasonably low. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are discussed. For NbN films the availability of nearly 1 GHz IF bandwidth is experimentally demonstrated. NbN hot-electron mucers combined with slot-line tapered antenna on Si membrane or with double-dipole antenna on SiO^ substrate have been fabricated. The devices we study are considered to be very promising for use in heterodyne receivers from microwaves to terahertz frequencies.
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Jukna, A., Kitaygorsky, J., Pan, D., Cross, A., Perlman, A., Komissarov, I., et al. (2008). Dynamics of hotspot formation in nanostructured superconducting stripes excited with single photons. Acta Physica Polonica A, 113(3), 955–958.
Abstract: Dynamics of a resistive hotspot formation by near-infrared-wavelength single photons in nanowire-type superconducting NbN stripes was investigated. Numerical simulations of ultrafast thermalization of photon-excited nonequilibrium quasiparticles, their multiplication and out-diffusion from a site of the photon absorption demonstrate that 1.55 μm wavelength photons create in an ultrathin, two-dimensional superconducting film a resistive hotspot with the diameter which depends on the photon energy, and the nanowire temperature and biasing conditions. Our hotspot model indicates that under the subcritical current bias of the 2D stripe, the electric field penetrates the superconductor at the hotspot boundary, leading to suppression of the stripe superconducting properties and accelerated development of a voltage transient across the stripe.
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Maslennikov, S. N., Morozov, D. V., Ozhegov, R. V., Smirnov, K. V., Okunev, O. V., & Gol’tsman, G. N. (2004). Imaging system for submillimeter wave range based on AlGaAs/GaAs hot electron bolometer mixers. In Proc. 5-th MSMW (Vol. 2, pp. 558–560).
Abstract: Electromagnetic radiation of the submillimeter (SMM) range is dispersed and absorbed significantly less than infrared (IR) radiation when passing through different objects. That is the reason for the development of an SMM imaging system. In this paper, we discuss the design of an SMM heterodyne imager, based on a matrix of AlGaAs/GaAs heterostructure hot electron bolometer mixers (HEB) with relatively high (about 77 K) operating temperature. The predicted double side band (DSB) noise temperature is about 1000 K and optimal local oscillator (LO) power is about 1 /spl mu/W for such mixers, which seems to be quite prospective for an SMM heterodyne imager.
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Zhang, J., Pearlman, A., Slysz, W., Verevkin, A., Sobolewski, R., Wilsher, K., et al. (2003). A superconducting single-photon detector for CMOS IC probing. In Proc. 16-th LEOS (Vol. 2, pp. 602–603).
Abstract: In this paper, a novel, time-resolved, NbN-based, superconducting single-photon detector (SSPD) has been developed for probing CMOS integrated circuits (ICs) using photon emission timing analysis (PETA).
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Gol'tsman, G. N., Karasik, B. S., Okunev, O. V., Dzardanov, A. L., Gershenzon, E. M., Ekstrom, H., et al. (1995). NbN hot electron superconducting mixers for 100 GHz operation. IEEE Trans. Appl. Supercond., 5(2), 3065–3068.
Abstract: NbN is a promising superconducting material for hot-electron superconducting mixers with an IF bandwidth larger than 1 GHz. In the 1OO GHz frequency range, the following parameters were obtained for 50 /spl Aring/ thick NbN films at 4.2 K: receiver noise temperature (DSB) /spl sim/1000 K; conversion loss /spl sim/10 dB; IF bandwidth /spl sim/1 GHz; and local oscillator power /spl sim/1 /spl mu/W. An increase of the critical current of the NbN film, increased working temperature, and a better mixer matching may allow a broader IF bandwidth up to 2 GHz, reduced conversion losses down to 3-5 dB and a receiver noise temperature (DSB) down to 200-300 K.
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