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Author Il’in, K.S.; Ptitsina, N.G.; Sergeev, A.V.; Gol’tsman, G.N.; Gershenzon, E.M.; Karasik, B.S.; Pechen, E.V.; Krasnosvobodtsev, S.I. url  doi
openurl 
  Title Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films Type Journal Article
  Year 1998 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 57 Issue 24 Pages 15623-15628  
  Keywords NbC films  
  Abstract (up) A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=2–13nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence ∼Tn, with the exponent n=2.5–3. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.  
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  Series Volume Series Issue Edition  
  ISSN 0163-1829 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1585  
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Author Bardeen, J.; Cooper, L. N.; Schrieffer, J. R. openurl 
  Title Theory of superconductivity Type Journal Article
  Year 1957 Publication Phys. Rev. Abbreviated Journal Phys. Rev.  
  Volume 108 Issue 5 Pages 1175-1204  
  Keywords BCS  
  Abstract (up) A theory of superconductivity is presented, based on the fact that the interaction between electrons resulting from virtual exchange of phonons is attractive when the energy difference between the electrons states involved is less than the phonon energy, â„<8f>ω. It is favorable to form a superconducting phase when this attractive interaction dominates the repulsive screened Coulomb interaction. The normal phase is described by the Bloch individual-particle model. The ground state of a superconductor, formed from a linear combination of normal state configurations in which electrons are virtually excited in pairs of opposite spin and momentum, is lower in energy than the normal state by amount proportional to an average (â„<8f>ω)2, consistent with the isotope effect. A mutually orthogonal set of excited states in one-to-one correspondence with those of the normal phase is obtained by specifying occupation of certain Bloch states and by using the rest to form a linear combination of virtual pair configurations. The theory yields a second-order phase transition and a Meissner effect in the form suggested by Pippard. Calculated values of specific heats and penetration depths and their temperature variation are in good agreement with experiment. There is an energy gap for individual-particle excitations which decreases from about 3.5kTc at T=0°K to zero at Tc. Tables of matrix elements of single-particle operators between the excited-state superconducting wave functions, useful for perturbation expansions and calculations of transition probabilities, are given.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 901  
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Author Bulaevskii, L. N.; Graf, M. J.; Batista, C. D.; Kogan, V. G. openurl 
  Title Vortex-induced dissipation in narrow current-biased thin-film superconducting strips Type Journal Article
  Year 2011 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 83 Issue 14 Pages 9  
  Keywords  
  Abstract (up) A vortex crossing a thin-film superconducting strip from one edge to the other, perpendicular to the bias current, is the dominant mechanism of dissipation for films of thickness d on the order of the coherence length ξ and of width w much narrower than the Pearl length Λâ‰<ab>wâ‰<ab>ξ. At high bias currents I*<I<Ic the heat released by the crossing of a single vortex suffices to create a belt-like normal-state region across the strip, resulting in a detectable voltage pulse. Here Ic is the critical current at which the energy barrier vanishes for a single vortex crossing. The belt forms along the vortex path and causes a transition of the entire strip into the normal state. We estimate I* to be roughly Ic/3. Furthermore, we argue that such “hot” vortex crossings are the origin of dark counts in photon detectors, which operate in the regime of metastable superconductivity at currents between I* and Ic. We estimate the rate of vortex crossings and compare it with recent experimental data for dark counts. For currents below I*, that is, in the stable superconducting but resistive regime, we estimate the amplitude and duration of voltage pulses induced by a single vortex crossing.  
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  Notes SSPD Approved no  
  Call Number RPLAB @ gujma @ Serial 688  
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Author Heslinga, D. R.; Shafranjuk, S. E.; van Kempen, H.; Klapwijk, T. M. url  doi
openurl 
  Title Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy Type Journal Article
  Year 1994 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 49 Issue 15 Pages 10484-10494  
  Keywords Nb, Si, Nb-Si, Nb/Si, Si/Nb, Andreev reflection, point-contact spectroscopy  
  Abstract (up) Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data.  
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  Publisher American Physical Society Place of Publication Editor  
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  Notes Approved no  
  Call Number Serial 1005  
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Author Bardeen, J; Mattis, D. C. openurl 
  Title Theory of the anomalous skin effect in normal and superconducting metals Type Journal Article
  Year 1958 Publication Phys. Rev. Abbreviated Journal Phys. Rev.  
  Volume 111 Issue 2 Pages 412-417  
  Keywords local dirty limit, complex conductivity, HEB  
  Abstract (up) Chambers' expression for the current density in a normal metal in which the electric field varies over a mean free path is derived from a quantum approach in which use is made of the density matrix in the presence of scattering centers but in the absence of the field. An approximate expression used for the latter is shown to reduce to one derived by Kohn and Luttinger for the case of weak scattering. A general space-and time-varying electromagnetic interaction is treated by first-order perturbation theory. The method is applied to superconductors, and a general expression derived for the kernel of the Pippard integral for fields of arbitrary frequency. The expressions derived can also be used to discuss absorption of electromagnetic radiation in thin superconducting films.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 937  
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