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Zinoni, C., Alloing, B., Li, L. H., Marsili, F., Fiore, A., Lunghi, L., et al. (2010). Erratum: “Single photon experiments at telecom wavelengths using nanowire superconducting detectors” [Appl. Phys. Lett. 91, 031106 (2007)]. Appl. Phys. Lett., 96(8), 089901.
Abstract: A calculation error was made in the original publication of this letter. The error was in the calculation of the noise equivalent power (NEP) values for the avalanche photodiode detector (APD) and the superconducting single photon detector (SSPD), the incorrect values were plotted on the right axis in Fig. 1(b). The correct NEP values were calculated with the same equation reported in the original letter and the revised Fig. 1(b) is shown below. The other conclusions of the paper remain unaltered.
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Il’in, K. S., Ptitsina, N. G., Sergeev, A. V., Gol’tsman, G. N., Gershenzon, E. M., Karasik, B. S., et al. (1998). Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films. Phys. Rev. B, 57(24), 15623–15628.
Abstract: A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=2–13nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence ∼Tn, with the exponent n=2.5–3. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
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Gershenzon, E. M., Il'in, V. A., Litvak-Gorskaya, L. B., & Filonovich, S. R. (1979). Character of submillimeter photoconductivity in n-lnSb. Sov. Phys. JETP, 49(1), 121–128.
Abstract: A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8).
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Svechnikov, S. I., Okunev, O. V., Yagoubov, P. A., Gol'tsman, G. N., Voronov, B. M., Cherednichenko, S. I., et al. (1997). 2.5 THz NbN hot electron mixer with integrated tapered slot antenna. IEEE Trans. Appl. Supercond., 7(2), 3548–3551.
Abstract: A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.
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Cherednichenko, S., Kroug, M., Merkel, H., Khosropanah, P., Adam, A., Kollberg, E., et al. (2002). 1.6 THz heterodyne receiver for the far infrared space telescope. Phys. C: Supercond., 372-376, 427–431.
Abstract: A low noise heterodyne receiver is being developed for the terahertz range using a phonon-cooled hot-electron bolometric mixer based on 3.5 nm thick superconducting NbN film. In the 1–2 GHz intermediate frequency band the double-sideband receiver noise temperature was 450 K at 0.6 THz, 700 K at 1.6 THz and 1100 K at 2.5 THz. In the 3–8 GHz IF band the lowest receiver noise temperature was 700 K at 0.6 THz, 1500 K at 1.6 THz and 3000 K at 2.5 THz while it increased by a factor of 3 towards 8 GHz.
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Boyarskii, D. A., Gershenzon, V. E., Gershenzon, E. M., Gol'tsman, G. N., Ptitsina, N. G., Tikhonov, V. V., et al. (1996). On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data. J. of Communications Technology and Electronics, 41(5), 408–414.
Abstract: A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed.
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Dauler, E. A., Robinson, B. S., Kerman, A. J., Yang, J. K. W., Rosfjord, E. K. M., Anant, V., et al. (2007). Multi-element superconducting nanowire single-photon detector. IEEE Trans. Appl. Supercond., 17(2), 279–284.
Abstract: A multi-element superconducting nanowire single photon detector (MESNSPD) is presented that consists of multiple independently-biased superconducting nanowire single photon detector (SNSPD) elements that form a continuous active area. A two-element SNSPD has been fabricated and tested, showing no measurable crosstalk between the elements, sub-50-ps relative timing jitter, and four times the maximum counting rate of a single SNSPD with the same active area. The MESNSPD can have a larger active area and higher speed than a single-element SNSPD and the input optics can be designed so that the detector provides spatial, spectral or photon number resolution.
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Polyakova, O. N., Tikhonov, V. V., Dzardanov, A. L., Boyarskii, D. A., & Gol’tsman, G. N. (2008). Dielectric characteristics of ore minerals in a 10–40 GHz frequency range. Tech. Phys. Lett., 34(11), 967–970.
Abstract: A new approach to investigation of the complex dielectric permittivity of both nonmetallic and ore minerals in the microwave frequency range is proposed. Using this approach, data on the complex permittivity of sphalerite, magnetite, and labradorite in a 10–40 GHz frequency range have been obtained for the first time. A method is proposed for calculating the complex permittivity from experimentally measured frequency dependences of the reflection and transmission coefficients of a plane-parallel plate of a given mineral. Approximate expressions that can be used for calculations of the complex refractive index and permittivity of minerals are presented.
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Tong, C. - Y. E., Trifonov, A., Shurakov, A., Blundell, R., & Gol’tsman, G. (2015). A microwave-operated hot-electron-bolometric power detector for terahertz radiation. IEEE Trans. Appl. Supercond., 25(3), 2300604 (1 to 4).
Abstract: A new class of microwave-operated THz power detectors based on the NbN hot-electron-bolometer (HEB) mixer is proposed. The injected microwave signal ( 1 GHz) serves the dual purpose of pumping the HEB element and enabling the read-out of the internal state of the device. A cryogenic amplifier amplifies the reflected microwave signal from the device and a homodyne scheme recovers the effects of the incident THz radiation. Two modes of operation have been identified, depending on the level of incident radiation. For weak signals, we use a chopper to chop the incident radiation against a black body reference and a lock-in amplifier to perform synchronous detection of the homodyne readout. The voltage measured is proportional to the incident power, and we estimate an optical noise equivalent power of 5pW/ √Hz at 0.83 THz. At higher signal levels, the homodyne circuit recovers the stream of steady relaxation oscillation pulses from the HEB device. The frequency of these pulses is in the MHz frequency range and bears a linear relationship with the incident THz radiation over an input power range of 15 dB. A digital frequency counter is used to measure THz power. The applicable power range is between 1 nW and 1 μW.
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Men’shchikov, E. M., Gogidze, I. G., Sergeev, A. V., Elant’ev, A. I., Kuminov, P. B., Gol’tsman, G. N., et al. (1997). Superconducting fast detector based on the nonequilibrium inductance response of a film of niobium nitride. Tech. Phys. Lett., 23(6), 486–488.
Abstract: A new type of fast detector is proposed, whose operation is based on the variation of the kinetic inductance of a superconducting film caused by nonequilibrium quasiparticles created by the electromagnetic radiation. The speed of the detector is determined by the rate of multiplication of photo-excited quasiparticles, and is nearly independent of the temperature, being less than 1 ps for NbN. Models based on the Owen-Scalapino scheme give a good description of the experimentally determined dependence of the power-voltage sensitivity of the detector on the modulation frequency. The lifetime of the quasiparticles is determined, and it is shown that the reabsorption of nonequilibrium phonons by the condensate has a substantial effect even in ultrathin NbN films 5 nm thick, and results in the maximum possible quantum yield. A low concentration of equilibrium quasiparticles and a high quantum yield result in a detectivity D*=1012 W−1·Hz1/2 at a temperature T=4.2 K and D*=1016 W−1·cm· Hz1/2 at T=1.6 K.
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